IRF7341PBF Equivalent & Substitute Parts

Part Overview

The IRF7341PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, configured as a 2N-channel logic level gate device rated for 55V drain-to-source voltage and 4.7A continuous drain current. The device is housed in an 8-SOIC surface mount package and delivers 2W maximum power dissipation across an operating temperature range of -55°C to 150°C.

The IRF7341PBF is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent substitute components. Substitute parts must maintain compatibility with the original electrical specifications, mechanical package dimensions, and application requirements while offering active product status and continued availability.

Key Parameters

Parameter	Value	Specification Basis
Configuration	2 N-Channel (Dual)	Functional requirement
Drain-to-Source Voltage (Vdss)	55V	Maximum voltage rating
Continuous Drain Current (Id) @ 25°C	4.7A	Current handling capacity
On-State Resistance (Rds On)	50mOhm @ 4.7A, 10V	Conduction loss parameter
Gate Threshold Voltage (Vgs(th))	1V @ 250µA	Logic level gate characteristic
Package / Case	8-SOIC (0.154", 3.90mm Width)	Mechanical compatibility
Mounting Type	Surface Mount	PCB assembly requirement
Operating Temperature Range	-55°C ~ 150°C (TJ)	Thermal operating window
Technology	MOSFET (Metal Oxide)	Device type
RoHS Status	ROHS3 Compliant	Environmental compliance

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7341PBF is determined by strict adherence to the following criteria:

Mandatory Electrical Parameters:

Configuration: 2 N-Channel (Dual) MOSFET array
Drain-to-Source Voltage (Vdss): Minimum 55V (higher ratings acceptable)
Continuous Drain Current (Id): Minimum 4.7A at 25°C (higher ratings acceptable)
Gate Feature: Logic Level Gate operation
Technology: MOSFET (Metal Oxide)

Mandatory Mechanical Parameters:

Package: 8-SOIC (0.154", 3.90mm Width) or equivalent 8-SO footprint
Mounting Type: Surface Mount

Mandatory Compliance Parameters:

RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Operating Temperature: Minimum -55°C to 150°C (extended ranges acceptable)

Acceptable Variations:

Vdss ratings up to 60V are acceptable (higher voltage rating provides design margin)
Continuous drain current ratings above 4.7A are acceptable (higher current capability provides design margin)
On-state resistance (Rds On) values at or below 50mOhm are acceptable
Gate threshold voltage (Vgs(th)) variations within logic level range are acceptable
Product status transition from discontinued to active is required

Substitute parts identified in this reference meet all mandatory criteria while maintaining electrical and mechanical compatibility with the original IRF7341PBF specification.

Parameter Comparison

Parameter	IRF7341PBF	IRF7341TRPBF	AO4828	DMN6040SSD-13	DMNH6042SSD-13	STS4DNF60L	STS5DNF60L
Manufacturer	Infineon	Infineon	Alpha & Omega	Diodes Inc.	Diodes Inc.	STMicroelectronics	STMicroelectronics
Configuration	2N-CH	2N-CH	2N-CH	2N-CH	2N-CH	2N-CH	2N-CH
Vdss (V)	55	55	60	60	60	60	60
Id @ 25°C (A)	4.7	4.7	—	5	16.7 (Tc)	4	5
Rds On (mOhm)	50 @ 4.7A, 10V	50 @ 4.7A, 10V	56 @ 4.5A, 10V	40 @ 4.5A, 10V	50 @ 5.1A, 10V	55 @ 2A, 10V	45 @ 2A, 10V
Vgs(th) (V)	1 @ 250µA	1 @ 250µA	3 @ 250µA	3 @ 250µA	3 @ 250µA	2.5 @ 250µA	2.5 @ 250µA
Gate Charge (nC)	36 @ 10V	36 @ 10V	10.5 @ 10V	22.4 @ 10V	4.2 @ 4.5V	15 @ 4.5V	15 @ 4.5V
Ciss (pF)	740 @ 25V	740 @ 25V	540 @ 30V	1287 @ 25V	584 @ 25V	1030 @ 25V	1030 @ 25V
Power Max (W)	2	2	2	1.3	2.1	2	2
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Discontinued	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
Automotive Grade	—	—	—	—	AEC-Q101	—	AEC-Q101

Engineering Selection Recommendations

Primary Substitute: IRF7341TRPBF

The IRF7341TRPBF is the manufacturer-recommended direct substitute for the discontinued IRF7341PBF. This part maintains identical electrical specifications (55V Vdss, 4.7A Id, 50mOhm Rds On, 1V Vgs(th)) and mechanical packaging (8-SOIC). The IRF7341TRPBF differs only in packaging format (Cut Tape & Digi-Reel versus bulk) and product status (Active). With 33,400 units in stock, this part provides immediate availability and eliminates any design re-qualification requirements.

Secondary Substitutes: 60V Rated Alternatives

When higher voltage margin is acceptable in the application design, the following active parts provide functional substitution:

STS5DNF60L (STMicroelectronics): Matches 4.7A continuous drain current specification with improved on-state resistance (45mOhm) and lower gate charge (15nC). Automotive-qualified (AEC-Q101) with 1,000,300 units in stock. Operating temperature extends to 150°C.
DMN6040SSD-13 (Diodes Incorporated): Provides 5A continuous drain current with superior on-state resistance (40mOhm) and reduced gate charge (22.4nC). 77,900 units available. Operating temperature range -55°C to 150°C.
STS4DNF60L (STMicroelectronics): Rated for 4A continuous drain current with 55mOhm on-state resistance. 15,465 units in stock. Suitable for applications with slightly reduced current requirements.
AO4828 (Alpha & Omega Semiconductor): Provides 60V rating with 2W power dissipation. 210,100 units in stock. Gate threshold voltage of 3V requires verification for logic level gate compatibility in specific applications.

Specialized Substitute: DMNH6042SSD-13

The DMNH6042SSD-13 (Diodes Incorporated) offers significantly higher continuous drain current (16.7A at Tc) and extended operating temperature to 175°C. This part carries automotive qualification (AEC-Q101) and is suitable for applications requiring enhanced thermal performance or higher current capacity. 13,935 units available.

Selection Criteria:

Direct replacement without design changes: IRF7341TRPBF
Higher current capacity required: DMNH6042SSD-13 or STS5DNF60L
Lowest on-state resistance priority: DMN6040SSD-13
Automotive qualification required: DMNH6042SSD-13 or STS5DNF60L
Maximum inventory availability: STS5DNF60L

All recommended substitutes maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, and 8-SOIC surface mount packaging compatibility.

Frequently Asked Questions (FAQ)

Q1: Can IRF7341TRPBF be used as a direct replacement for IRF7341PBF without PCB modifications?

A: Yes. The IRF7341TRPBF maintains identical electrical specifications and 8-SOIC package footprint. The only difference is packaging format (tape and reel versus bulk). No PCB layout changes are required.

Q2: What is the primary reason to consider 60V-rated substitutes instead of the IRF7341TRPBF?

A: The 60V-rated alternatives (STS5DNF60L, DMN6040SSD-13, STS4DNF60L, AO4828) provide higher voltage margin for circuit protection and may offer improved electrical characteristics such as lower on-state resistance or reduced gate charge. These benefits are application-dependent and should be evaluated against specific circuit requirements.

Q3: Are all substitute parts compatible with logic level gate drive circuits?

A: The IRF7341PBF, IRF7341TRPBF, AO4828, DMN6040SSD-13, STS4DNF60L, and STS5DNF60L are all specified as logic level gate devices. The DMNH6042SSD-13 does not specify a gate feature designation; verification of gate threshold voltage (3V @ 250µA) compatibility with the drive circuit is required before selection.

Q4: Which substitute offers the best thermal performance?

A: The DMNH6042SSD-13 provides the highest power dissipation rating (2.1W) and extended operating temperature range (-55°C to 175°C). This part is suitable for applications with elevated thermal requirements or extended temperature operation.

Q5: What is the difference between the packaging designations "8-SO" and "8-SOIC"?

A: Both designations refer to the same 8-pin small outline package with 0.154" (3.90mm) width. The terms are used interchangeably by different manufacturers. All substitute parts listed maintain mechanical compatibility with the original IRF7341PBF footprint.

Q6: Is automotive qualification required for all applications?

A: Automotive qualification (AEC-Q101) is required only for applications in automotive or safety-critical systems. The DMNH6042SSD-13 and STS5DNF60L carry AEC-Q101 qualification. For non-automotive applications, this certification is not mandatory.

Q7: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The IRF7341PBF specifies 36nC @ 10V, while substitutes range from 4.2nC to 22.4nC. Lower gate charge substitutes may improve efficiency in high-frequency switching applications.

Q8: Can STS5DNF60L be used in applications originally designed for IRF7341PBF?

A: Yes, with verification. The STS5DNF60L maintains the same 4.7A continuous drain current, 2W power dissipation, and 8-SOIC package. The 60V Vdss rating provides higher voltage margin. Gate threshold voltage (2.5V) differs from the original (1V), requiring confirmation that the gate drive circuit can reliably switch the device.

Q9: What inventory considerations should guide substitute selection?

A: STS5DNF60L offers the highest inventory availability (1,000,300 units), followed by AO4828 (210,100 units) and DMN6040SSD-13 (77,900 units). IRF7341TRPBF provides 33,400 units. For applications with long production runs or supply chain risk mitigation, higher inventory levels provide supply security.

Q10: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental compliance profile of the original IRF7341PBF.

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