IRF7331TRPBF Equivalent & Substitute Parts

Part Overview

The IRF7331TRPBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, rated for 20V drain-source voltage and 7A continuous drain current. This component is part of the HEXFET® series and features logic-level gate operation suitable for surface mount applications in 8-SO packaging.

The IRF7331TRPBF is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	7	A
On-State Resistance (Rds On) @ 7A, 4.5V	30	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.2	V
Gate Charge (Qg) @ 4.5V	20	nC
Input Capacitance (Ciss) @ 16V	1340	pF
Maximum Power Dissipation	2	W
Operating Temperature Range	-55 to 150	°C
Configuration	2 N-Channel (Dual)
Package Type	8-SOIC (0.154", 3.90mm Width)
FET Feature	Logic Level Gate
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IRF7331TRPBF are selected based on strict electrical and mechanical compatibility criteria. The following parameters determine substitution eligibility:

Critical Parameters for Substitution:

Drain-Source Voltage (Vdss): Must equal or exceed 20V
Package Type: Must be 8-SOIC (0.154", 3.90mm Width) or equivalent 8-SO
Configuration: Must be 2 N-Channel (Dual)
FET Feature: Must support Logic Level Gate operation
Operating Temperature Range: Must cover -55°C to 150°C
Mounting Type: Must be Surface Mount

Performance Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 7A at 25°C
On-State Resistance (Rds On): Lower or equal values are acceptable
Gate Threshold Voltage (Vgs(th)): Must be compatible with logic-level gate drive circuits
Gate Charge (Qg): Lower values indicate faster switching characteristics
Input Capacitance (Ciss): Affects gate drive requirements

All substitute parts listed meet the critical substitution criteria and are available in active or supported product status with full RoHS3 compliance.

Parameter Comparison

Parameter	IRF7331TRPBF (Main)	DMN2029USD-13	FDS9926A	STS10DN3LH5	ZXMN2A04DN8TA
Manufacturer	Infineon Technologies	Diodes Incorporated	onsemi	STMicroelectronics	Diodes Incorporated
Vdss (V)	20	20	20	30	20
Id @ 25°C (A)	7	5.8	6.5	10	5.9
Rds On (mOhm)	30 @ 7A, 4.5V	25 @ 6.5A, 4.5V	30 @ 6.5A, 4.5V	21 @ 5A, 10V	25 @ 5.9A, 4.5V
Vgs(th) (V)	1.2 @ 250µA	1.5 @ 250µA	1.5 @ 250µA	1 @ 250µA	0.7 @ 250µA (Min)
Qg (nC)	20 @ 4.5V	18.6 @ 8V	9 @ 4.5V	4.6 @ 5V	22.1 @ 5V
Ciss (pF)	1340 @ 16V	1171 @ 10V	650 @ 10V	475 @ 25V	1880 @ 10V
Power Max (W)	2	1.2	0.9	2.5	1.8
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Configuration	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel	2 N-Channel
Product Status	Obsolete	Active	Active	Not For New Designs	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

DMN2029USD-13 (Diodes Incorporated) and ZXMN2A04DN8TA (Diodes Incorporated) are recommended as primary substitutes. Both parts are in active product status, ensuring long-term availability and supply chain support. These components maintain the 20V Vdss rating and 8-SOIC package compatibility. The DMN2029USD-13 provides 5.8A continuous drain current with 25mOhm on-state resistance, while the ZXMN2A04DN8TA delivers 5.9A with identical on-state resistance. Both support logic-level gate operation and full temperature range operation from -55°C to 150°C.

FDS9926A (onsemi) is an active product substitute offering 6.5A continuous drain current with 30mOhm on-state resistance, matching the IRF7331TRPBF on-state resistance specification. This part features the PowerTrench® series technology and provides lower gate charge (9nC) and input capacitance (650pF), resulting in improved switching performance characteristics.

Secondary Substitute (Not For New Designs):

STS10DN3LH5 (STMicroelectronics) is classified as "Not For New Designs" and should be considered only for legacy system maintenance or replacement applications. This part exceeds the IRF7331TRPBF specifications with 30V Vdss rating and 10A continuous drain current, providing design margin for higher voltage or current applications. However, the higher Vdss rating and different gate charge characteristics may require circuit validation.

Compliance and Regulatory Status:

All substitute parts maintain RoHS3 compliance, REACH unaffected status, and EAR99 export classification, matching the regulatory profile of the original IRF7331TRPBF component.

Frequently Asked Questions (FAQ)

Q: Can DMN2029USD-13 be used as a direct replacement for IRF7331TRPBF?

A: DMN2029USD-13 is electrically compatible within the specified operating parameters. Both parts feature 20V Vdss, 8-SOIC packaging, dual N-channel configuration, and logic-level gate operation. The DMN2029USD-13 provides 5.8A continuous drain current compared to the IRF7331TRPBF's 7A rating. Circuit validation is required if the application demands the full 7A specification.

Q: What is the difference between FDS9926A and DMN2029USD-13?

A: Both parts meet the core substitution criteria with 20V Vdss and 8-SOIC packaging. FDS9926A (onsemi) delivers 6.5A continuous drain current with significantly lower gate charge (9nC versus 18.6nC) and input capacitance (650pF versus 1171pF), enabling faster switching response. DMN2029USD-13 (Diodes Incorporated) provides 5.8A with higher input capacitance, affecting gate drive circuit design. Selection depends on switching speed requirements and gate drive capabilities.

Q: Why is STS10DN3LH5 marked "Not For New Designs"?

A: STS10DN3LH5 is a legacy product from STMicroelectronics' STripFET™ V series. While it exceeds IRF7331TRPBF specifications (30V Vdss, 10A Id), the manufacturer has discontinued active development. This part is suitable only for maintaining existing designs or replacing failed components in legacy systems. New designs should utilize active product alternatives.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts are available in 8-SOIC (0.154", 3.90mm Width) surface mount packaging, matching the IRF7331TRPBF package footprint. Packaging variants (Cut Tape, Tape & Reel, Digi-Reel®) differ by supplier but do not affect electrical compatibility or PCB assembly compatibility.

Q: What is the impact of different Vgs(th) values on circuit operation?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage required to initiate channel conduction. The IRF7331TRPBF specifies 1.2V maximum at 250µA. Substitute parts range from 0.7V (ZXMN2A04DN8TA minimum) to 1.5V (DMN2029USD-13, FDS9926A). All values support logic-level gate drive circuits (typically 3.3V or 5V). Verify gate drive voltage compatibility with the application circuit before substitution.

Q: Can ZXMN2A04DN8TA replace IRF7331TRPBF in all applications?

A: ZXMN2A04DN8TA is electrically compatible with 20V Vdss, 5.9A continuous drain current, and 8-SOIC packaging. The lower gate threshold voltage (0.7V minimum) and higher input capacitance (1880pF) may affect gate drive circuit performance. Applications requiring the full 7A specification should be evaluated for current margin. Circuit validation is recommended before production substitution.

Q: What inventory status should influence substitution decisions?

A: DMN2029USD-13 (1210 pcs), FDS9926A (74300 pcs), STS10DN3LH5 (80100 pcs), and ZXMN2A04DN8TA (6768 pcs) are all in stock. FDS9926A offers the highest inventory availability. For long-term production requirements, prioritize active product status (DMN2029USD-13, FDS9926A, ZXMN2A04DN8TA) over legacy products (STS10DN3LH5).

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