IRF7331TR Equivalent & Substitute Parts

Part Overview

The IRF7331TR is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic-level gate control. This component integrates two N-channel MOSFETs in an 8-SOIC package with a maximum drain-source voltage of 20V and continuous drain current rating of 7A per channel.

The IRF7331TR is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IRF7331TR

Infineon TechnologiesIn Stock: 841IRF7331TR Datasheet

Current PartRFQ

FDS9926A

onsemiIn Stock: 74335FDS9926A Datasheet

MFR RecommendedRFQ

ZXMN2A04DN8TA

Diodes IncorporatedIn Stock: 6823ZXMN2A04DN8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7331TR is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• Configuration: 2 N-Channel (Dual) MOSFET array
• Drain to Source Voltage (Vdss): 20V minimum
• Package / Case: 8-SOIC form factor with 0.154" (3.90mm) width
• Mounting Type: Surface Mount
• FET Feature: Logic Level Gate operation
• Operating Temperature Range: -55°C to 150°C (TJ)

Functional Compatibility Parameters:

• Continuous Drain Current (Id): Minimum 5.9A (substitute parts must support the application's current requirements)
• On-Resistance (Rds On): Maximum 30 mOhm at rated conditions (lower values are acceptable)
• Gate Threshold Voltage (Vgs(th)): Within logic-level range (0.7V to 1.5V @ 250µA)

The substitute parts listed below meet all mandatory matching parameters and maintain functional compatibility within the specified electrical operating range.

Parameter Comparison

Engineering Selection Recommendations

FDS9926A (onsemi PowerTrench®)

The FDS9926A is an active product with ROHS3 compliance. It matches the IRF7331TR across all mandatory parameters: dual N-channel configuration, 20V Vdss, 8-SOIC package, and logic-level gate operation. The continuous drain current is rated at 6.5A, which is 7% lower than the IRF7331TR's 7A rating. On-resistance is equivalent at 30 mOhm. Gate charge is significantly lower at 9nC compared to 20nC, resulting in faster switching characteristics. Input capacitance is reduced to 650pF, improving high-frequency performance. Maximum power dissipation is 900mW, lower than the original 2W rating. Selection of this substitute is appropriate for applications where the 6.5A current rating is sufficient and where reduced power dissipation and improved switching speed are beneficial.

ZXMN2A04DN8TA (Diodes Incorporated)

The ZXMN2A04DN8TA is an active product with ROHS3 compliance. It matches the IRF7331TR across all mandatory parameters: dual N-channel configuration, 20V Vdss, 8-SOIC package, and logic-level gate operation. The continuous drain current is rated at 5.9A, which is 16% lower than the IRF7331TR's 7A rating. On-resistance is superior at 25 mOhm compared to 30 mOhm, providing lower conduction losses. Gate threshold voltage is lower at 0.7V minimum, ensuring reliable logic-level operation with lower gate drive voltages. Gate charge is comparable at 22.1nC. Input capacitance is higher at 1880pF, which may impact switching speed in high-frequency applications. Maximum power dissipation is 1.8W, lower than the original 2W rating. Selection of this substitute is appropriate for applications where the 5.9A current rating is sufficient and where lower on-resistance and improved efficiency are prioritized.

Both substitute parts are active products with current manufacturing support and regulatory compliance, addressing the obsolescence of the IRF7331TR.

Frequently Asked Questions (FAQ)

Q: Can the FDS9926A replace the IRF7331TR in all applications?

A: The FDS9926A is electrically compatible with the IRF7331TR for applications requiring continuous drain currents up to 6.5A. The 7% reduction in current rating must be evaluated against your specific application's maximum current demand. Both parts share identical Vdss (20V), package form factor (8-SOIC), and logic-level gate operation. The FDS9926A offers improved switching characteristics due to lower gate charge (9nC vs. 20nC).

Q: What is the difference in current handling between the three parts?

A: The IRF7331TR is rated for 7A continuous drain current. The FDS9926A is rated for 6.5A (93% of original), and the ZXMN2A04DN8TA is rated for 5.9A (84% of original). Selection depends on your circuit's maximum sustained current requirement. If your application requires the full 7A, neither substitute is suitable. If your application requires 6.5A or less, the FDS9926A is appropriate. If your application requires 5.9A or less, both substitutes are suitable.

Q: Are the substitute parts pin-compatible with the IRF7331TR?

A: Yes. All three parts use the 8-SOIC package with identical 0.154" (3.90mm) width. Pin assignments for dual N-channel MOSFET arrays in this package are standardized. Direct PCB footprint compatibility is confirmed.

Q: What are the compliance differences between the original and substitute parts?

A: The IRF7331TR is RoHS non-compliant. Both substitute parts (FDS9926A and ZXMN2A04DN8TA) are ROHS3 compliant. If your application or supply chain requires RoHS compliance, both substitutes meet this requirement. All three parts are REACH unaffected and classified as EAR99 for export control purposes.

Q: How do the on-resistance values compare?

A: The IRF7331TR and FDS9926A both specify 30 mOhm on-resistance at their respective rated currents (7A and 6.5A at 4.5V Vgs). The ZXMN2A04DN8TA offers superior on-resistance at 25 mOhm at 5.9A and 4.5V Vgs. Lower on-resistance reduces conduction losses and heat generation, improving overall circuit efficiency.

Q: Which substitute part has better switching performance?

A: The FDS9926A exhibits superior switching performance with gate charge of 9nC compared to the IRF7331TR's 20nC. Lower gate charge enables faster switching transitions, reducing switching losses in high-frequency applications. The ZXMN2A04DN8TA has gate charge of 22.1nC, slightly higher than the original, but still within acceptable range for most applications.

Q: What is the impact of input capacitance differences?

A: The IRF7331TR has input capacitance of 1340pF at 16V. The FDS9926A has 650pF at 10V (approximately 49% lower), improving high-frequency performance and reducing gate drive requirements. The ZXMN2A04DN8TA has 1880pF at 10V (approximately 40% higher), which may require increased gate drive current in high-frequency switching applications.

Q: Are there inventory considerations for these substitute parts?

A: The IRF7331TR has 818 pieces in stock as an obsolete part. The FDS9926A has 74,300 pieces in stock, providing substantial supply availability. The ZXMN2A04DN8TA has 6,768 pieces in stock. Both substitutes offer significantly better long-term supply security compared to the obsolete original part.