IRF7331 Equivalent & Substitute Parts

Part Overview

The IRF7331 is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications in 8-SOIC packaging. This component features logic level gate operation with a 20V drain-source voltage rating and 7A continuous drain current capability. The IRF7331 is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the 8-SOIC package standard.

Substiute Parts

IRF7331
Infineon TechnologiesIn Stock: 17875IRF7331 Datasheet
IRF7331
Current Part
DMN2029USD-13
Diodes IncorporatedIn Stock: 1296DMN2029USD-13 Datasheet
DMN2029USD-13
MFR Recommended
FDS9926A
onsemiIn Stock: 74335FDS9926A Datasheet
FDS9926A
MFR Recommended
ZXMN2A04DN8TA
Diodes IncorporatedIn Stock: 6823ZXMN2A04DN8TA Datasheet
ZXMN2A04DN8TA
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7 A
Rds On (Max) @ Id, Vgs 30 mOhm @ 7A, 4.5V mOhm
Vgs(th) (Max) @ Id 1.2 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1340 pF @ 16V
Power - Max 2 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 N-Channel (Dual)
Package / Case 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7331 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal 20V
  • Configuration: Must be 2 N-Channel (Dual)
  • Package / Case: Must be 8-SOIC (0.154", 3.90mm Width)
  • FET Feature: Must support Logic Level Gate operation
  • Operating Temperature Range: Must span -55°C to 150°C (TJ)

Secondary Performance Parameters:

  • Current - Continuous Drain (Id) @ 25°C: Substitute must support minimum 5.8A (all listed substitutes meet or exceed this threshold)
  • Rds On (Max) @ Id, Vgs: Substitute must not exceed 30 mOhm at rated conditions
  • Vgs(th) (Max) @ Id: Substitute must support logic level gate threshold within specified range
  • Gate Charge (Qg): Lower values indicate improved switching performance
  • Input Capacitance (Ciss): Lower values reduce gate drive requirements

All three substitute parts (DMN2029USD-13, FDS9926A, ZXMN2A04DN8TA) satisfy the primary compatibility criteria and maintain electrical performance within acceptable ranges for direct substitution.

Parameter Comparison

Parameter IRF7331 DMN2029USD-13 FDS9926A ZXMN2A04DN8TA
Manufacturer Infineon Technologies Diodes Incorporated onsemi Diodes Incorporated
Product Status Obsolete Active Active Active
Drain to Source Voltage (Vdss) 20V 20V 20V 20V
Current - Continuous Drain (Id) @ 25°C 7A 5.8A 6.5A 5.9A
Rds On (Max) @ Id, Vgs 30 mOhm @ 7A, 4.5V 25 mOhm @ 6.5A, 4.5V 30 mOhm @ 6.5A, 4.5V 25 mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 0.7V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5V 18.6 nC @ 8V 9 nC @ 4.5V 22.1 nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1340 pF @ 16V 1171 pF @ 10V 650 pF @ 10V 1880 pF @ 10V
Power - Max 2W 1.2W 0.9W 1.8W
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) -55°C to 150°C (TJ) -55°C to 150°C (TJ)
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Product Status Consideration: The IRF7331 is classified as obsolete. All three substitute parts (DMN2029USD-13, FDS9926A, ZXMN2A04DN8TA) maintain active product status, ensuring long-term availability and continued manufacturer support.

Compliance and Certification: The IRF7331 is RoHS non-compliant. All substitute parts achieve ROHS3 compliance, meeting current regulatory requirements for new designs and production environments subject to RoHS directives. All parts maintain REACH Unaffected status and EAR99 export classification.

Electrical Performance: All substitute parts maintain the 20V Vdss rating and support continuous drain currents between 5.8A and 6.5A, which accommodates applications designed for the IRF7331's 7A specification with appropriate thermal management considerations. Rds On values remain within acceptable ranges (25-30 mOhm), ensuring comparable power dissipation characteristics.

Thermal and Environmental Compatibility: All substitute parts maintain the -55°C to 150°C operating temperature range, ensuring compatibility with existing thermal design specifications.

Package Compatibility: All substitute parts utilize the 8-SOIC (0.154", 3.90mm Width) package, enabling direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the IRF7331 be directly replaced with any of the listed substitute parts?

A: Yes. All three substitute parts (DMN2029USD-13, FDS9926A, ZXMN2A04DN8TA) meet the primary compatibility criteria: identical 20V Vdss rating, dual N-channel configuration, logic level gate operation, 8-SOIC package, and -55°C to 150°C operating temperature range. Electrical performance parameters remain within acceptable substitution tolerances.

Q: What is the primary reason for substituting the IRF7331?

A: The IRF7331 is classified as obsolete. Substitute parts maintain active product status, ensuring continued availability from manufacturers and distributors. Additionally, all substitutes achieve ROHS3 compliance, whereas the IRF7331 is RoHS non-compliant.

Q: Are there differences in continuous drain current ratings among the substitutes?

A: Yes. The IRF7331 supports 7A continuous drain current. Substitute parts support 5.8A (DMN2029USD-13), 6.5A (FDS9926A), and 5.9A (ZXMN2A04DN8TA). Applications requiring the full 7A specification must account for reduced current capacity through thermal management or circuit redesign.

Q: How do gate charge characteristics differ among the substitutes?

A: Gate charge values vary: IRF7331 (20 nC @ 4.5V), DMN2029USD-13 (18.6 nC @ 8V), FDS9926A (9 nC @ 4.5V), and ZXMN2A04DN8TA (22.1 nC @ 5V). Lower gate charge reduces gate drive power requirements and improves switching speed. The FDS9926A exhibits the lowest gate charge, offering improved switching performance.

Q: What is the significance of input capacitance differences?

A: Input capacitance (Ciss) affects gate drive circuit design and switching characteristics. The FDS9926A exhibits the lowest Ciss (650 pF @ 10V), reducing gate drive requirements. The ZXMN2A04DN8TA exhibits the highest Ciss (1880 pF @ 10V), requiring higher gate drive current for equivalent switching speed.

Q: Are all substitute parts available in the same packaging options?

A: The IRF7331 and all substitutes utilize 8-SOIC (0.154", 3.90mm Width) package. Packaging options differ: DMN2029USD-13 is supplied in Tape & Reel (TR), FDS9926A in Cut Tape (CT) & Digi-Reel®, and ZXMN2A04DN8TA in Cut Tape (CT). These packaging variations do not affect electrical compatibility or PCB assembly compatibility.

Q: Do all substitute parts meet the same environmental and regulatory standards?

A: All substitute parts maintain Moisture Sensitivity Level 1 (Unlimited), REACH Unaffected status, and EAR99 export classification, matching the IRF7331 environmental profile. All substitutes achieve ROHS3 compliance, exceeding the IRF7331's RoHS non-compliant status.

Q: Which substitute part offers the best thermal performance?

A: The ZXMN2A04DN8TA supports the highest maximum power dissipation (1.8W), followed by DMN2029USD-13 (1.2W) and FDS9926A (0.9W), compared to the IRF7331 (2W). Thermal performance depends on application-specific duty cycles and heat dissipation requirements.

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