IRF7328TR Equivalent & Substitute Parts

Part Overview

The IRF7328TR is a dual P-channel MOSFET array manufactured by Infineon Technologies, configured as a 2P-CH device rated for 30V drain-to-source voltage and 8A continuous drain current. This component is classified as obsolete, indicating discontinuation from the manufacturer. The IRF7328TR operates across an extended temperature range of -55°C to 150°C and is housed in an 8-SOIC surface mount package with 0.154" (3.90mm) width. Identification of equivalent and substitute parts is necessary due to the obsolete status of the original device, requiring selection from active product alternatives that maintain electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Configuration	2 P-Channel (Dual)	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	8	A
Rds On (Max) @ Id, Vgs	21	mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2675	pF @ 25V
Power - Max	2	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
FET Feature	Logic Level Gate	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRF7328TR is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Configuration: 2 P-Channel (Dual) MOSFET array
Drain to Source Voltage (Vdss): 30V minimum
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
FET Feature: Logic Level Gate
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

Current - Continuous Drain (Id) @ 25°C: 8A or greater
Rds On (Max) @ Id, Vgs: 21mOhm or lower
Vgs(th) (Max) @ Id: 2.5V or lower
Gate Charge (Qg) (Max) @ Vgs: 78nC or lower
Input Capacitance (Ciss) (Max) @ Vds: 2675pF or lower

Substitute parts must satisfy all primary criteria and maintain compatibility within secondary parameters to ensure functional equivalence in circuit applications.

Parameter Comparison

Parameter	IRF7328TR	IRF7328TRPBF	DMP3036SSD-13	FDS4935BZ
Manufacturer	Infineon Technologies	Infineon Technologies	Diodes Incorporated	onsemi
Configuration	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)	2 P-Channel (Dual)
Vdss (V)	30	30	30	30
Id @ 25°C (A)	8	8	18.0 (Tc)	6.9
Rds On (Max) (mOhm)	21 @ 8A, 10V	21 @ 8A, 10V	20 @ 9A, 10V	22 @ 6.9A, 10V
Vgs(th) (Max) (V)	2.5 @ 250µA	2.5 @ 250µA	3 @ 250µA	3 @ 250µA
Gate Charge (Qg) (Max) (nC)	78 @ 10V	78 @ 10V	16.5 @ 10V	40 @ 10V
Ciss (Max) (pF)	2675 @ 25V	2675 @ 25V	1931 @ 15V	1360 @ 15V
Power - Max (W)	2	2	1.2	0.9
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)	8-SOIC (0.154", 3.90mm)
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate
Product Status	Obsolete	Active	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF7328TRPBF (Infineon Technologies)

The IRF7328TRPBF is the direct manufacturer equivalent of the IRF7328TR, offering identical electrical specifications and package configuration. This part maintains 30V Vdss, 8A continuous drain current, 21mOhm Rds On, and 2W maximum power dissipation. The IRF7328TRPBF is classified as an active product with ROHS3 compliance, addressing the obsolescence of the original IRF7328TR. This substitute is the preferred selection for direct replacement applications requiring no circuit modification.

DMP3036SSD-13 (Diodes Incorporated)

The DMP3036SSD-13 is an alternative substitute manufactured by Diodes Incorporated, maintaining the 30V Vdss rating and 8-SOIC package configuration. This device provides enhanced current capability at 18.0A continuous drain current, exceeding the IRF7328TR specification. The DMP3036SSD-13 features improved gate charge characteristics (16.5nC versus 78nC) and reduced input capacitance (1931pF versus 2675pF), resulting in faster switching performance. The Rds On specification of 20mOhm at 9A, 10V is superior to the original device. This part is ROHS3 compliant and active in production. Selection of the DMP3036SSD-13 is appropriate for applications where enhanced performance margins and improved switching characteristics are beneficial.

FDS4935BZ (onsemi)

The FDS4935BZ is an alternative substitute manufactured by onsemi under the PowerTrench® series, maintaining the 30V Vdss rating and 8-SOIC package configuration. This device provides continuous drain current of 6.9A, which is below the IRF7328TR specification of 8A. The FDS4935BZ features reduced gate charge (40nC versus 78nC) and significantly lower input capacitance (1360pF versus 2675pF), enabling faster switching operation. The Rds On specification of 22mOhm at 6.9A, 10V is comparable to the original device. Maximum power dissipation is rated at 900mW, lower than the IRF7328TR at 2W. This part is ROHS3 compliant and active in production. Selection of the FDS4935BZ is appropriate for applications where current requirements do not exceed 6.9A and where reduced power dissipation and improved switching speed are advantageous.

Frequently Asked Questions (FAQ)

Q: Can the IRF7328TRPBF directly replace the IRF7328TR without circuit modification?

A: Yes. The IRF7328TRPBF is the direct manufacturer equivalent with identical electrical specifications, gate charge characteristics, input capacitance, and package configuration. No circuit modification is required for direct substitution.

Q: What is the primary difference between the DMP3036SSD-13 and the original IRF7328TR?

A: The DMP3036SSD-13 provides higher continuous drain current (18.0A versus 8A), lower gate charge (16.5nC versus 78nC), and reduced input capacitance (1931pF versus 2675pF). These characteristics enable faster switching performance and higher current handling capability. The Rds On is improved at 20mOhm versus 21mOhm.

Q: Is the FDS4935BZ suitable for applications requiring 8A continuous drain current?

A: No. The FDS4935BZ is rated for 6.9A continuous drain current, which is below the IRF7328TR specification of 8A. This substitute is appropriate only for applications where the required current does not exceed 6.9A.

Q: Are all substitute parts housed in the same package as the IRF7328TR?

A: Yes. All substitute parts (IRF7328TRPBF, DMP3036SSD-13, and FDS4935BZ) are housed in the 8-SOIC package with 0.154" (3.90mm) width, ensuring mechanical compatibility and identical PCB footprint.

Q: What is the compliance status of the substitute parts?

A: All substitute parts are ROHS3 compliant, addressing the RoHS non-compliant status of the obsolete IRF7328TR. All parts maintain REACH Unaffected status and EAR99 ECCN classification.

Q: Which substitute part offers the best switching performance?

A: The DMP3036SSD-13 offers the lowest gate charge (16.5nC) and reduced input capacitance (1931pF), providing superior switching speed. The FDS4935BZ also provides improved switching characteristics with 40nC gate charge and 1360pF input capacitance, though with lower current rating.

Q: Can the substitute parts operate across the same temperature range as the IRF7328TR?

A: Yes. All substitute parts operate across the extended temperature range of -55°C to 150°C (TJ), matching the original device specification.

Q: What is the moisture sensitivity level for all parts in this comparison?

A: All parts, including the IRF7328TR and all substitutes, are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

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