IRF7326D2TR Equivalent & Substitute Parts

Part Overview

The IRF7326D2TR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 3.6A continuous drain current at 25°C. The device is housed in an 8-SO surface mount package and features an integrated Schottky diode. This part is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	3.6	A
Rds On (Max) @ Id, Vgs	100 mOhm @ 1.8A, 10V	—
Power Dissipation (Max)	2	W
Operating Temperature Range	-55 to 150	°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
FET Feature	Schottky Diode (Isolated)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7326D2TR is determined by the following critical parameters:

Primary Matching Criteria:

FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 3.6A or greater at 25°C
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
FET Feature: Schottky Diode (Isolated)
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Rds On (Max): 100 mOhm or lower at specified conditions
Power Dissipation: 2W or greater
Vgs (Max): ±20V or greater
Gate Charge (Qg): 25 nC or lower

Substitute parts must satisfy all primary matching criteria. Variations in secondary factors are acceptable provided they do not degrade circuit performance or thermal management.

Parameter Comparison

Parameter	IRF7326D2TR	IRF7326D2TRPBF	NTMD4184PFR2G
Manufacturer	Infineon Technologies	Infineon Technologies	onsemi
FET Type	P-Channel	P-Channel	P-Channel
Drain to Source Voltage (Vdss)	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	3.6 A	3.6 A	2.3 A
Rds On (Max) @ Id, Vgs	100 mOhm @ 1.8A, 10V	100 mOhm @ 1.8A, 10V	95 mOhm @ 3A, 10V
Power Dissipation (Max)	2 W	2 W	770 mW
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
FET Feature	Schottky Diode (Isolated)	Schottky Diode (Isolated)	Schottky Diode (Isolated)
Vgs (Max)	±20 V	±20 V	±20 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V	25 nC @ 10 V	4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 25 V	440 pF @ 25 V	360 pF @ 10 V
RoHS Status	RoHS non-compliant	Not specified	ROHS3 Compliant

Engineering Selection Recommendations

IRF7326D2TRPBF (Parametric Equivalent):

The IRF7326D2TRPBF is a direct parametric equivalent to the IRF7326D2TR. Both parts are manufactured by Infineon Technologies within the FETKY™ series and share identical electrical specifications. The primary distinction is packaging format: IRF7326D2TRPBF is supplied in Cut Tape (CT) and Digi-Reel® configurations, whereas the original part number does not specify packaging detail. Both parts are classified as obsolete. This substitute provides identical performance characteristics and is suitable for direct replacement in existing designs.

NTMD4184PFR2G (Manufacturer Recommended Substitute):

The NTMD4184PFR2G is a onsemi P-Channel MOSFET rated for 30V with integrated Schottky diode in 8-SOIC package. This part meets all primary matching criteria for substitution. Key differences include:

Continuous drain current: 2.3A (versus 3.6A for IRF7326D2TR)
Power dissipation: 770 mW (versus 2W for IRF7326D2TR)
Gate charge: 4.2 nC @ 4.5V (versus 25 nC @ 10V for IRF7326D2TR)

The NTMD4184PFR2G is ROHS3 compliant, addressing regulatory requirements not met by the obsolete IRF7326D2TR. Selection of this substitute is appropriate for applications where the reduced current rating and power dissipation are compatible with circuit requirements. Thermal design review is required due to lower power dissipation capability.

Frequently Asked Questions (FAQ)

Q: Can IRF7326D2TRPBF be used as a direct replacement for IRF7326D2TR?

A: Yes. IRF7326D2TRPBF is a parametric equivalent with identical electrical specifications. The difference is packaging format (Cut Tape/Digi-Reel versus standard). Both are obsolete products from Infineon Technologies.

Q: Is NTMD4184PFR2G a direct replacement for IRF7326D2TR?

A: NTMD4184PFR2G is a functional substitute meeting all primary matching criteria (P-Channel, 30V, 8-SOIC package, Schottky diode). However, continuous drain current is reduced to 2.3A and power dissipation to 770 mW. Substitution is valid only if circuit requirements do not exceed these ratings.

Q: What are the key differences between IRF7326D2TR and NTMD4184PFR2G?

A: Continuous drain current (3.6A vs. 2.3A), power dissipation (2W vs. 770 mW), gate charge (25 nC vs. 4.2 nC), and RoHS compliance status (non-compliant vs. ROHS3 compliant). All other primary parameters match.

Q: Are all substitute parts available in the same 8-SOIC package?

A: Yes. All listed parts use 8-SOIC (0.154", 3.90mm Width) surface mount packaging, ensuring mechanical and electrical compatibility on PCB layouts.

Q: Which substitute should be selected for new designs?

A: Selection depends on circuit current and power dissipation requirements. If continuous drain current must reach 3.6A and power dissipation approaches 2W, IRF7326D2TRPBF is preferred. If current requirements are 2.3A or lower, NTMD4184PFR2G offers ROHS3 compliance and improved gate charge characteristics.

Q: What is the operating temperature range for all listed parts?

A: All parts operate from -55°C to 150°C (junction temperature), meeting identical thermal specifications.

Q: Are there RoHS compliance differences between substitutes?

A: Yes. IRF7326D2TR and IRF7326D2TRPBF are RoHS non-compliant. NTMD4184PFR2G is ROHS3 compliant, making it suitable for applications with RoHS regulatory requirements.

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