IRF7321D2TR P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7321D2TR is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 4.7A continuous drain current. This device is part of the FETKY™ series and is designed for surface mount applications in 8-SO packaging. The IRF7321D2TR has reached obsolete product status, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	4.7	A
On-Resistance (Rds On Max) @ Id, Vgs	62 mOhm @ 4.9A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	1	V @ 250µA
Gate Charge (Qg Max) @ Vgs	34	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	710	pF @ 25V
Power Dissipation (Max)	2	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	RoHS non-compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRF7321D2TR is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 30V minimum
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package Type: 8-SOIC (0.154", 3.90mm Width)
Gate Voltage Range (Vgs Max): ±20V
Operating Temperature Range: Minimum -55°C to 150°C

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id) @ 25°C: 4.7A or greater
On-Resistance (Rds On): 62 mOhm or lower at specified conditions
Gate Charge (Qg): Lower values preferred for switching efficiency
Input Capacitance (Ciss): Lower values preferred for gate drive requirements

The substitute parts listed below meet or exceed the electrical specifications of the IRF7321D2TR while maintaining identical or compatible package geometry and thermal characteristics.

Parameter Comparison

Parameter	IRF7321D2TR (Infineon)	RRH050P03TB1 (Rohm)	STS5P3LLH6 (STMicroelectronics)
Drain-to-Source Voltage (Vdss)	30 V	30 V	30 V
Continuous Drain Current (Id) @ 25°C	4.7 A	5 A	5 A
On-Resistance (Rds On Max)	62 mOhm @ 4.9A, 10V	50 mOhm @ 5A, 10V	56 mOhm @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th) Max)	1 V @ 250µA	2.5 V @ 1mA	2.5 V @ 250µA
Gate Charge (Qg Max)	34 nC @ 10V	9.2 nC @ 5V	6 nC @ 4.5V
Maximum Gate Voltage (Vgs Max)	±20 V	±20 V	±20 V
Input Capacitance (Ciss Max)	710 pF @ 25V	850 pF @ 10V	639 pF @ 25V
Power Dissipation (Max)	2 W	650 mW	2.7 W
Operating Temperature Range	-55 to 150 °C	150 °C (TJ)	150 °C (TJ)
Package	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Product Status	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

RRH050P03TB1 (Rohm Semiconductor): This substitute offers improved on-resistance performance (50 mOhm versus 62 mOhm) and higher continuous drain current (5A versus 4.7A). The RRH050P03TB1 is ROHS3 compliant and maintains active product status, ensuring long-term availability and supply chain stability. Lower gate charge (9.2 nC) reduces gate drive power requirements. Power dissipation is reduced to 650 mW, improving thermal efficiency. This part is suitable for applications where lower power consumption and improved compliance posture are required.

STS5P3LLH6 (STMicroelectronics): This substitute provides the closest performance match to the IRF7321D2TR with equivalent power dissipation (2.7W versus 2W) and superior on-resistance (56 mOhm). The STS5P3LLH6 features the lowest gate charge (6 nC) among all options, enabling faster switching and reduced gate drive complexity. ROHS3 compliance and active product status ensure continued availability. The STripFET™ H6 series technology provides optimized switching characteristics. This part is recommended for applications requiring thermal performance and switching speed equivalent to the original design.

Both substitute parts maintain identical package geometry (8-SOIC), gate voltage ratings (±20V), and operating temperature range compatibility with the IRF7321D2TR. Selection between these options depends on specific application requirements regarding power dissipation, on-resistance, and compliance mandates.

Frequently Asked Questions (FAQ)

Q: Can the RRH050P03TB1 or STS5P3LLH6 be used as direct replacements for the IRF7321D2TR?

A: Both parts are electrically and mechanically compatible substitutes. They share identical Vdss (30V), package type (8-SOIC), and gate voltage ratings (±20V). Both exceed the minimum continuous drain current requirement (4.7A) and meet or improve upon on-resistance specifications. Pin-for-pin compatibility is maintained in the 8-SOIC package.

Q: What are the key differences between the two substitute options?

A: The RRH050P03TB1 offers the lowest power dissipation (650 mW) and lowest on-resistance (50 mOhm), making it ideal for efficiency-critical applications. The STS5P3LLH6 provides the lowest gate charge (6 nC) and highest power dissipation rating (2.7W), making it suitable for high-frequency switching and thermal-demanding applications. Both are ROHS3 compliant and active products.

Q: Is the IRF7321D2TR still available for procurement?

A: The IRF7321D2TR is classified as obsolete. While legacy inventory may exist (1104 pcs reported in stock), long-term availability cannot be assured. Transition to active substitute parts is recommended for new designs and ongoing production.

Q: Are there any thermal management differences between these parts?

A: The RRH050P03TB1 has the lowest maximum power dissipation (650 mW), requiring less thermal management. The STS5P3LLH6 (2.7W) and IRF7321D2TR (2W) have higher dissipation ratings and may require thermal considerations in high-current applications. All three parts operate within -55°C to 150°C range.

Q: What is the impact of different gate charge specifications?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. The STS5P3LLH6 (6 nC) requires the least gate drive energy, followed by RRH050P03TB1 (9.2 nC), while the IRF7321D2TR (34 nC) requires significantly more. Lower gate charge enables faster switching and simpler gate drive implementations.

Q: Do the substitute parts have the same RoHS compliance status?

A: No. The IRF7321D2TR is RoHS non-compliant. Both substitute parts (RRH050P03TB1 and STS5P3LLH6) are ROHS3 compliant, meeting current environmental and regulatory requirements for new designs and production.

Q: Are there any differences in on-resistance that would affect circuit performance?

A: Yes. The RRH050P03TB1 (50 mOhm @ 5A, 10V) and STS5P3LLH6 (56 mOhm @ 2.5A, 10V) both provide lower on-resistance than the IRF7321D2TR (62 mOhm @ 4.9A, 10V). Lower on-resistance reduces conduction losses and heat generation, improving overall circuit efficiency.

Q: Can these parts be used in existing PCB layouts designed for the IRF7321D2TR?

A: Yes. All three parts use identical 8-SOIC package geometry (0.154", 3.90mm Width) with the same pin configuration. PCB layouts, footprints, and assembly processes require no modification for substitution.

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