IRF7321D2 Equivalent & Substitute MOSFETs Reference

Part Overview

The Infineon Technologies IRF7321D2 is a P-Channel MOSFET, specified for 30 V Vdss, 4.7A Id, and a maximum on-resistance of 62mOhm, housed in an 8-SOIC surface mount package. The product is obsolete, necessitating the identification of compatible, available alternatives with matching electrical, mechanical, and packaging characteristics to ensure design continuity and supply chain reliability.

Key Parameters

Parameter	IRF7321D2
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	62mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 25 V
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Equivalent and substitute P-Channel MOSFETs are selected strictly based on the following allowed electrical, package, and regulatory parameters:

FET Type: must be P-Channel MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): must equal 30 V
Current - Continuous Drain (Id) @ 25°C: must meet or exceed 4.7A (Ta)
Drive Voltage: must include 4.5V or 10V
Rds On (Max) @ Id, Vgs: must match or be lower than 62mOhm at 10V
Gate Charge, Input Capacitance, and threshold voltage matching as input
Package: must be 8-SOIC (0.154", 3.90mm Width) surface mount
Compliant RoHS/REACH/ECCN/MSL as provided

Parameter Comparison

Parameter	IRF7321D2 (Infineon Technologies)	FDS9435A (onsemi)
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	4.7A (Ta)	5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	62mOhm @ 4.9A, 10V	50mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V	14 nC @ 10 V
Vgs (Max)	±20V	±25V
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 25 V	528 pF @ 15 V
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
RoHS Status	RoHS non-compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99

Engineering Selection Recommendations

The Infineon Technologies IRF7321D2 is obsolete with RoHS non-compliant status, whereas the onsemi FDS9435A is active and ROHS3 compliant. Both parts are REACH unaffected, have an MSL of 1 (Unlimited), and share ECCN EAR99. Mechanical (package/case) and key electrical parameters (FET type, voltage, and current ratings) are compatible according to the input data.

Frequently Asked Questions (FAQ)

Q1: What are the key criteria for selecting equivalent MOSFETs?
A1: Key criteria include FET type, Drain to Source Voltage (Vdss), Continuous Drain Current (Id), Rds On, package type, mounting style, and compliance status as specified.

Q2: Is the package/case of FDS9435A a match for IRF7321D2?
A2: Both IRF7321D2 and FDS9435A utilize the 8-SOIC (0.154", 3.90mm Width) package, ensuring direct footprint compatibility.

Q3: Does RoHS status affect substitution eligibility?
A3: RoHS status differentiation is noted: IRF7321D2 is non-compliant, while FDS9435A is ROHS3 compliant.

Q4: Are the electrical performance parameters for IRF7321D2 and its substitute directly comparable?
A4: The Vdss, Id, Rds On, drive voltage, and package are directly comparable per the input specifications.

Q5: What is the impact of product status in substitution?
A5: IRF7321D2 is obsolete; therefore, active alternatives such as FDS9435A are considered for continuity based strictly on the provided parameter set.

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