IRF7316TR MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7316TR is a dual P-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic level gate control. This component integrates two P-channel MOSFETs in a single 8-SOIC package with a maximum drain-source voltage rating of 30V and continuous drain current of 4.9A per channel.

The IRF7316TR is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRF7316TR
Infineon TechnologiesIn Stock: 17363IRF7316TR Datasheet
IRF7316TR
Current Part
IRF7316TRPBF
Infineon TechnologiesIn Stock: 37173IRF7316TRPBF Datasheet
IRF7316TRPBF
Direct
ZXMP3A16DN8TA
Diodes IncorporatedIn Stock: 6283ZXMP3A16DN8TA Datasheet
ZXMP3A16DN8TA
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 4.9 A
On-Resistance (Rds On) @ 4.9A, 10V 58 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 1 V
Gate Charge (Qg) @ 10V 34 nC
Input Capacitance (Ciss) @ 25V 710 pF
Maximum Power Dissipation 2 W
Operating Temperature Range -55 to 150 °C
Configuration 2 P-Channel (Dual)
Package Type 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the IRF7316TR are identified based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Critical Matching Parameters:

  • Configuration: 2 P-Channel (Dual) MOSFET array
  • Package: 8-SOIC (0.154", 3.90mm Width) surface mount
  • Drain-Source Voltage (Vdss): 30V minimum
  • Gate Feature: Logic Level Gate
  • Operating Temperature Range: -55°C to 150°C minimum

Performance Parameters (Allowable Variation):

  • Continuous Drain Current (Id): 4.2A or higher
  • On-Resistance (Rds On): Equal to or lower than specified
  • Gate Charge (Qg): Equal to or lower than specified
  • Input Capacitance (Ciss): Acceptable within application requirements

Substitute parts must maintain identical package footprint and pinout compatibility to ensure direct board-level replacement without layout modifications.

Parameter Comparison

Parameter IRF7316TR (Main) IRF7316TRPBF (Direct) ZXMP3A16DN8TA (Alternative)
Manufacturer Infineon Technologies Infineon Technologies Diodes Incorporated
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Vdss (V) 30 30 30
Id @ 25°C (A) 4.9 4.9 4.2
Rds On @ Id, 10V (mOhm) 58 58 45
Vgs(th) @ 250µA (V) 1 1 1
Qg @ 10V (nC) 34 34 29.6
Ciss @ Vds (pF) 710 @ 25V 710 @ 25V 1022 @ 15V
Power Max (W) 2 2 1.8
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150
Package 8-SOIC 8-SOIC 8-SOIC
Mounting Type Surface Mount Surface Mount Surface Mount
Product Status Obsolete Active Active
RoHS Compliance Non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRF7316TRPBF (Direct Equivalent - Recommended Primary Choice)

The IRF7316TRPBF is the direct equivalent of the IRF7316TR, manufactured by Infineon Technologies under the same HEXFET® series. This part maintains identical electrical specifications and package configuration. The primary distinction is product status: IRF7316TRPBF is active and currently in production, whereas the IRF7316TR is obsolete. IRF7316TRPBF carries ROHS3 compliance certification, meeting modern regulatory requirements. This part is suitable for direct substitution in all applications where the IRF7316TR was originally specified. Current inventory availability is 37,100 units.

ZXMP3A16DN8TA (Alternative Substitute - Secondary Choice)

The ZXMP3A16DN8TA, manufactured by Diodes Incorporated, provides functional equivalence with measurable performance improvements in specific parameters. This part maintains the same 30V Vdss rating, dual P-channel configuration, and 8-SOIC package footprint. Key differences include:

  • Continuous drain current: 4.2A (versus 4.9A in the main part)
  • On-resistance: 45mOhm (lower than 58mOhm, indicating improved efficiency)
  • Gate charge: 29.6nC (lower than 34nC, indicating faster switching)
  • Maximum power dissipation: 1.8W (versus 2W)

The ZXMP3A16DN8TA is suitable for applications where the IRF7316TR drain current rating is not fully utilized. This part also carries ROHS3 compliance. Current inventory availability is 6,218 units.

Selection Criteria:

For applications requiring maximum current capacity and power handling, select IRF7316TRPBF. For applications where current requirements are below 4.2A and improved switching performance is beneficial, ZXMP3A16DN8TA is acceptable. Both alternatives are active products with regulatory compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can IRF7316TRPBF be used as a direct replacement for IRF7316TR without circuit modifications?

A: Yes. IRF7316TRPBF is electrically and mechanically identical to IRF7316TR. Both parts share the same electrical specifications, gate characteristics, and 8-SOIC package footprint. No circuit modifications or board layout changes are required.

Q: What is the primary difference between IRF7316TR and IRF7316TRPBF?

A: The IRF7316TR is obsolete, while IRF7316TRPBF is an active product. IRF7316TRPBF also carries ROHS3 compliance certification. Electrical performance and package specifications are identical.

Q: Can ZXMP3A16DN8TA replace IRF7316TR in all applications?

A: ZXMP3A16DN8TA is suitable for most applications, with the following consideration: the continuous drain current rating is 4.2A compared to 4.9A in the IRF7316TR. If your application requires sustained drain currents above 4.2A, ZXMP3A16DN8TA is not appropriate. For applications operating below 4.2A, ZXMP3A16DN8TA provides equivalent or superior performance.

Q: Are both substitute parts compatible with the same PCB footprint?

A: Yes. Both IRF7316TRPBF and ZXMP3A16DN8TA use the 8-SOIC package with 0.154" (3.90mm) width. Pin configuration and spacing are identical, enabling direct board-level substitution without layout modifications.

Q: What are the RoHS compliance differences?

A: The original IRF7316TR is RoHS non-compliant. Both substitute parts, IRF7316TRPBF and ZXMP3A16DN8TA, are ROHS3 compliant, meeting current environmental and regulatory standards for electronic components.

Q: How do the on-resistance specifications compare?

A: IRF7316TR and IRF7316TRPBF both specify 58mOhm at 4.9A and 10V gate voltage. ZXMP3A16DN8TA specifies 45mOhm at 4.2A and 10V gate voltage. Lower on-resistance reduces power dissipation and heat generation during operation.

Q: What is the significance of gate charge differences?

A: Gate charge (Qg) affects switching speed and gate drive requirements. IRF7316TR and IRF7316TRPBF specify 34nC at 10V. ZXMP3A16DN8TA specifies 29.6nC at 10V. Lower gate charge enables faster switching transitions and reduced switching losses in high-frequency applications.

Q: Are there inventory considerations for part selection?

A: IRF7316TRPBF has higher current inventory (37,100 units) compared to ZXMP3A16DN8TA (6,218 units). For applications with extended production timelines or high-volume requirements, IRF7316TRPBF availability is more favorable.

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