IRF7311TR Equivalent & Substitute Parts

Part Overview

The IRF7311TR is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic level gate control. This component features a 20V drain-to-source voltage rating with 6.6A continuous drain current capability and is housed in an 8-SOIC package. The IRF7311TR is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements.

Substiute Parts

IRF7311TR

Infineon TechnologiesIn Stock: 9131IRF7311TR Datasheet

Current PartRFQ

FDS9926A

onsemiIn Stock: 74335FDS9926A Datasheet

MFR RecommendedRFQ

ZXMN2A04DN8TA

Diodes IncorporatedIn Stock: 6823ZXMN2A04DN8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7311TR is determined by the following critical parameters:

Mandatory Matching Criteria:

• Dual N-channel configuration
• 20V Vdss rating
• Logic level gate feature
• 8-SOIC surface mount package with 0.154" (3.90mm) width
• Operating temperature range of -55°C to 150°C

Allowable Parameter Variance:

• Continuous drain current (Id): Substitute must meet or exceed 6.6A specification
• On-resistance (Rds On): Substitute must not exceed 29mOhm at rated conditions
• Gate charge and input capacitance: Substitutes may vary within acceptable switching performance margins

The identified substitute parts FDS9926A and ZXMN2A04DN8TA satisfy all mandatory matching criteria and fall within allowable parameter tolerances for direct functional replacement.

Parameter Comparison

Engineering Selection Recommendations

FDS9926A (onsemi PowerTrench®)

The FDS9926A is an active product with ROHS3 compliance, providing direct functional equivalence to the IRF7311TR. This substitute maintains the 20V Vdss rating and dual N-channel configuration with 6.5A continuous drain current, meeting the primary electrical requirements. The on-resistance specification of 30mOhm at 6.5A and 4.5V Vgs is within acceptable tolerance of the original 29mOhm specification. The FDS9926A exhibits lower gate charge (9nC) and reduced input capacitance (650pF), resulting in improved switching performance characteristics. Inventory availability of 74,300 units supports production continuity.

ZXMN2A04DN8TA (Diodes Incorporated)

The ZXMN2A04DN8TA is an active product with ROHS3 compliance, offering an alternative substitution path for the IRF7311TR. This component maintains the 20V Vdss rating and dual N-channel configuration with 5.9A continuous drain current. The on-resistance specification of 25mOhm at 5.9A and 4.5V Vgs is superior to the original specification, providing lower conduction losses. The gate charge specification of 22.1nC is comparable to the original 27nC. The higher input capacitance (1880pF) may introduce minor switching speed variations in high-frequency applications. Inventory availability of 6,768 units supports production requirements.

Both substitutes are suitable for applications where the IRF7311TR is currently specified. Selection between FDS9926A and ZXMN2A04DN8TA should be based on specific application requirements regarding switching frequency, thermal management, and supply chain availability.

Frequently Asked Questions (FAQ)

Q: Can the FDS9926A directly replace the IRF7311TR in existing PCB layouts?

A: Yes. Both components use identical 8-SOIC packaging with 0.154" (3.90mm) width and surface mount configuration. Pin-to-pin compatibility is maintained for dual N-channel MOSFET array applications.

Q: What is the significance of the on-resistance difference between the IRF7311TR (29mOhm) and FDS9926A (30mOhm)?

A: The 1mOhm difference represents a 3.4% variance and falls within acceptable engineering tolerance for most applications. This difference produces negligible impact on conduction losses in typical switching circuits.

Q: Why does the ZXMN2A04DN8TA have lower continuous drain current (5.9A) compared to the IRF7311TR (6.6A)?

A: The ZXMN2A04DN8TA is rated for 5.9A continuous drain current at 25°C. For applications requiring the full 6.6A specification, the FDS9926A at 6.5A provides closer current matching. Verify application current requirements before selection.

Q: Are there compliance differences between the main part and substitutes?

A: Yes. The IRF7311TR is RoHS non-compliant and obsolete. Both FDS9926A and ZXMN2A04DN8TA are ROHS3 compliant and active products, making them suitable for new designs and applications requiring regulatory compliance.

Q: How do gate charge differences affect circuit performance?

A: The FDS9926A exhibits significantly lower gate charge (9nC versus 27nC), resulting in faster switching transitions and reduced gate drive power requirements. The ZXMN2A04DN8TA gate charge (22.1nC) is comparable to the original specification. Gate charge impact is most significant in high-frequency switching applications above 1MHz.

Q: What packaging options are available for these substitutes?

A: FDS9926A is supplied in Cut Tape (CT) and Digi-Reel® packaging. ZXMN2A04DN8TA is supplied in Cut Tape (CT) packaging. Both are surface mount 8-SOIC components suitable for automated assembly processes.