IRF7311PBF Equivalent & Substitute Parts

Part Overview

The IRF7311PBF is a dual N-channel MOSFET array manufactured by Infineon Technologies, configured as a 2N-channel logic level gate device rated for 20V drain-to-source voltage and 6.6A continuous drain current. The device is housed in an 8-SOIC surface mount package and is compliant with ROHS3 and REACH standards.

This part is currently discontinued at DiGi Electronics. Equivalent and substitute parts are available from active manufacturers including Diodes Incorporated and onsemi, offering comparable or enhanced electrical performance within the same package footprint and operating temperature range.

Substiute Parts

IRF7311PBF

Infineon TechnologiesIn Stock: 953IRF7311PBF Datasheet

Current PartRFQ

DMG9926USD-13

Diodes IncorporatedIn Stock: 18181DMG9926USD-13 Datasheet

MFR RecommendedRFQ

DMN2041LSD-13

Diodes IncorporatedIn Stock: 3683DMN2041LSD-13 Datasheet

MFR RecommendedRFQ

NTMD4N03R2G

onsemiIn Stock: 15535NTMD4N03R2G Datasheet

MFR RecommendedRFQ

ZXMN2A04DN8TA

Diodes IncorporatedIn Stock: 6823ZXMN2A04DN8TA Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7311PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): 20V or higher
• Configuration: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Type: Surface Mount
• Operating Temperature Range: -55°C to 150°C (TJ)

Performance Parameters (Application-Dependent):

• Current - Continuous Drain (Id) @ 25°C: 6.6A or higher
• Rds On (Max) @ Id, Vgs: Lower or equal values preferred
• Gate Charge (Qg) (Max) @ Vgs: Lower values preferred for switching speed
• Input Capacitance (Ciss) (Max) @ Vds: Lower values preferred for gate drive efficiency

All substitute parts listed meet the mandatory compatibility criteria. Variations in performance parameters reflect different design trade-offs and manufacturing processes across suppliers.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitutes (20V Vdss Rating):

The DMG9926USD-13, DMN2041LSD-13, and ZXMN2A04DN8TA are direct substitutes for the IRF7311PBF, all manufactured by Diodes Incorporated with active product status. These devices maintain the 20V Vdss rating and dual N-channel logic level gate configuration in identical 8-SOIC packaging. All three are ROHS3 compliant with MSL 1 rating.

DMG9926USD-13 offers the highest continuous drain current (8A) and lowest on-resistance (24mOhm), with significantly reduced gate charge (8.8nC), making it suitable for applications requiring enhanced current handling and faster switching characteristics.

DMN2041LSD-13 provides current rating (7.63A) and on-resistance (28mOhm) closely aligned with the original IRF7311PBF, with moderate gate charge (15.6nC) and reduced input capacitance (550pF).

ZXMN2A04DN8TA delivers current rating (5.9A) and on-resistance (25mOhm) within acceptable margins, with gate charge (22.1nC) comparable to the original device.

Alternative Substitute (30V Vdss Rating):

The NTMD4N03R2G from onsemi operates at 30V Vdss, providing higher voltage margin than the original 20V specification. This device is suitable for applications where increased voltage headroom is beneficial. However, the continuous drain current (4A) is lower than the IRF7311PBF, and on-resistance (60mOhm) is significantly higher. This part is appropriate only for applications where the 6.6A current requirement can be reduced or where the higher voltage rating is a design advantage.

All substitute parts maintain the -55°C to 150°C operating temperature range, ROHS3 compliance, and MSL 1 moisture sensitivity rating of the original device.

Frequently Asked Questions (FAQ)

Q: Can the DMG9926USD-13 directly replace the IRF7311PBF without circuit modifications?

A: The DMG9926USD-13 is pin-compatible and functionally equivalent within the 8-SOIC package. It meets all mandatory compatibility criteria: 20V Vdss, dual N-channel logic level gate configuration, and identical package dimensions. However, the higher current rating (8A vs. 6.6A) and lower on-resistance (24mOhm vs. 29mOhm) may affect circuit behavior in current-limiting or thermal management scenarios. Circuit validation is necessary to confirm suitability for the specific application.

Q: Why does the NTMD4N03R2G have a 30V Vdss rating instead of 20V?

A: The NTMD4N03R2G is designed for higher voltage applications. The 30V rating provides additional voltage margin but is not a requirement for substitution. This device is compatible with 20V circuits but offers overvoltage protection. The lower continuous drain current (4A) and higher on-resistance (60mOhm) reflect different design trade-offs optimized for higher voltage operation.

Q: What is the significance of gate charge differences among the substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge enables faster switching and reduces gate driver power consumption. The DMG9926USD-13 has significantly lower gate charge (8.8nC) compared to the IRF7311PBF (27nC), resulting in faster switching speed and lower driver stress. Applications with high switching frequencies benefit from lower gate charge values.

Q: Are all substitute parts available in the same packaging options as the IRF7311PBF?

A: All substitute parts are available in 8-SOIC surface mount packaging with identical physical dimensions (0.154", 3.90mm width). Packaging options vary by supplier: DMG9926USD-13 and DMN2041LSD-13 are supplied in Tape & Reel (TR), NTMD4N03R2G in Cut Tape (CT) & Digi-Reel®, and ZXMN2A04DN8TA in Cut Tape (CT). These packaging variations do not affect electrical compatibility or PCB assembly compatibility.

Q: Which substitute part is recommended for direct replacement in existing designs?

A: The DMN2041LSD-13 provides the closest electrical match to the IRF7311PBF, with current rating (7.63A) and on-resistance (28mOhm) most similar to the original device. This part minimizes the risk of unintended circuit behavior changes. The DMG9926USD-13 is recommended for applications where improved performance (higher current, lower on-resistance, faster switching) is acceptable or beneficial.

Q: Do all substitute parts meet the same compliance standards as the IRF7311PBF?

A: Yes. All substitute parts are ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity rating, matching the original IRF7311PBF specifications. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the impact of input capacitance (Ciss) differences on circuit performance?

A: Input capacitance affects gate drive requirements and switching speed. The NTMD4N03R2G has the lowest input capacitance (400pF), while the ZXMN2A04DN8TA has the highest (1880pF). Higher input capacitance requires greater gate driver current and energy. Applications with limited gate driver capability may benefit from lower Ciss values, while applications with robust gate drivers are less sensitive to this parameter.