IRF730STRRPBF Equivalent & Substitute Parts

Part Overview

The IRF730STRRPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 5.5A continuous drain current. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for applications requiring moderate power dissipation in compact form factors. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, package compatibility, operating temperature range, and compliance certifications. Alternative devices enable design flexibility, inventory optimization, and supply chain continuity while maintaining functional equivalence within specified application constraints.

Substiute Parts

IRF730STRRPBF

Vishay SiliconixIn Stock: 2961IRF730STRRPBF Datasheet

Current PartRFQ

STB11NK40ZT4

STMicroelectronicsIn Stock: 2395STB11NK40ZT4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF730STRRPBF are qualified based on the following substitution criteria:

Electrical Parameter Matching:

• Drain-to-source voltage (Vdss) must equal or exceed 400V
• Continuous drain current (Id) must equal or exceed 5.5A at 25°C
• Gate threshold voltage (Vgs(th)) must be compatible with 10V drive voltage
• Maximum gate voltage (Vgs Max) must accommodate ±20V or greater
• Operating temperature range must span -55°C to 150°C minimum

Package & Mechanical Compatibility:

• Surface Mount D2PAK (TO-263-3) package required
• Pin configuration must match TO-263AB standard

Compliance & Certification:

• RoHS3 compliance mandatory
• Moisture Sensitivity Level 1 (Unlimited) required
• Active product status preferred

The STB11NK40ZT4 from STMicroelectronics meets all substitution criteria with enhanced electrical performance characteristics, including higher continuous drain current (9A) and improved on-state resistance (550mOhm), while maintaining identical package form factor and compliance requirements.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: STB11NK40ZT4

The STB11NK40ZT4 is a direct functional substitute for the IRF730STRRPBF. Both devices share identical voltage ratings (400V Vdss), matching operating temperature ranges (-55°C to 150°C), and equivalent Surface Mount D2PAK packaging. Both maintain Active product status with full RoHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity ratings.

The STB11NK40ZT4 provides enhanced electrical performance with 63% higher continuous drain current (9A versus 5.5A) and 45% lower on-state resistance (550mOhm versus 1Ohm at comparable operating points). The substitute device features reduced gate charge (32nC versus 38nC), enabling faster switching characteristics. Maximum gate voltage rating increases from ±20V to ±30V, providing additional design margin in gate drive circuits.

Both devices are manufactured to equivalent quality and compliance standards. Selection between these parts depends on application-specific current requirements and thermal management capabilities. The STB11NK40ZT4 is suitable for applications requiring higher current capacity or improved efficiency through reduced conduction losses.

Frequently Asked Questions (FAQ)

Q: Can the STB11NK40ZT4 directly replace the IRF730STRRPBF in existing designs?

A: Yes. Both devices share identical 400V drain-to-source voltage ratings, matching operating temperature ranges, and equivalent D2PAK Surface Mount packaging. Pin configuration and package dimensions are compatible. No PCB layout modifications are required.

Q: What are the key electrical differences between these devices?

A: The STB11NK40ZT4 provides higher continuous drain current (9A versus 5.5A) and lower on-state resistance (550mOhm versus 1Ohm). Gate charge is reduced (32nC versus 38nC), and maximum gate voltage rating is higher (±30V versus ±20V). These differences result in improved current handling capacity and switching efficiency.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IRF730STRRPBF and STB11NK40ZT4 are RoHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity ratings. Both maintain Active product status.

Q: Does the higher input capacitance of the STB11NK40ZT4 affect gate drive requirements?

A: The STB11NK40ZT4 has higher input capacitance (930pF versus 700pF at 25V Vds). This requires proportionally higher gate charge delivery during switching transitions. Gate drive circuits must supply adequate current to charge the increased capacitance within specified switching time windows. Lower gate charge (32nC versus 38nC) partially offsets the capacitance increase.

Q: What is the impact of lower on-state resistance in the STB11NK40ZT4?

A: Lower on-state resistance (550mOhm versus 1Ohm) reduces conduction losses and heat dissipation during continuous operation. This enables higher current operation within equivalent thermal budgets or reduces cooling requirements for equivalent current levels. Power dissipation capability increases from 74W (Tc) to 110W (Tc).

Q: Are there packaging or mounting differences between these devices?

A: No. Both devices use identical Surface Mount TO-263-3 (D2PAK) packaging with two leads plus tab configuration. Footprint, pin spacing, and mounting procedures are equivalent.

Q: Which device should be selected for new designs?

A: Selection depends on application current requirements and thermal management strategy. For applications requiring 5.5A or less, either device is suitable. For applications approaching or exceeding 5.5A, the STB11NK40ZT4 provides improved performance margin and efficiency. Both devices are Active products with equivalent supply availability and compliance certifications.