IRF730STRR Equivalent & Substitute Parts

Part Overview

The IRF730STRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 5.5A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for applications requiring moderate power dissipation in compact form factors. The IRF730STRR maintains Active product status and is currently in stock with 674 units available.

Substitute parts are identified to address inventory availability, enhanced performance characteristics, or compliance requirements while maintaining functional compatibility within the specified electrical and mechanical parameters.

Substiute Parts

IRF730STRR

Vishay SiliconixIn Stock: 688IRF730STRR Datasheet

Current PartRFQ

STB11NK40ZT4

STMicroelectronicsIn Stock: 2395STB11NK40ZT4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF730STRR is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): 400V minimum
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Surface Mount
• Package / Case: TO-263 (D2PAK) or equivalent mechanical footprint

Performance Criteria:

• Continuous Drain Current (Id): Equal to or greater than 5.5A
• On-State Resistance (Rds On): Equal to or lower than specified maximum
• Operating Temperature Range: Minimum -55°C to 150°C
• Gate Threshold Voltage (Vgs(th)): Within acceptable switching characteristics

The STB11NK40ZT4 meets all mandatory compatibility criteria and exceeds performance specifications in drain current capacity (9A vs. 5.5A) and power dissipation capability (110W vs. 74W). Both devices share identical voltage ratings, package type, and operating temperature range, establishing direct functional substitution.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: STB11NK40ZT4

The STB11NK40ZT4 is a direct functional substitute for the IRF730STRR based on electrical and mechanical compatibility. Both devices share identical voltage ratings (400V Vdss), identical operating temperature range (-55°C to 150°C), and identical Surface Mount D2PAK packaging.

The STB11NK40ZT4 provides enhanced performance characteristics: 63% higher continuous drain current (9A vs. 5.5A), 49% lower on-state resistance (0.55 Ohm vs. 1 Ohm), and 49% higher power dissipation capability (110W vs. 74W). These improvements establish the STB11NK40ZT4 as a superior alternative in applications where higher current handling or reduced thermal dissipation is beneficial.

Compliance Consideration:

The STB11NK40ZT4 holds ROHS3 Compliant status, whereas the IRF730STRR is RoHS non-compliant. Applications subject to RoHS regulatory requirements must use the STB11NK40ZT4 or equivalent compliant alternatives.

Inventory Status:

The STB11NK40ZT4 maintains higher inventory availability (2285 units) compared to the IRF730STRR (674 units), supporting supply chain continuity for high-volume production requirements.

Frequently Asked Questions (FAQ)

Q: Can the STB11NK40ZT4 replace the IRF730STRR in existing circuit designs?

A: Yes. Both devices share identical drain-to-source voltage ratings (400V), identical operating temperature range (-55°C to 150°C), and identical Surface Mount D2PAK package footprints. The STB11NK40ZT4 exceeds the IRF730STRR in continuous drain current and power dissipation capacity, making it functionally compatible for direct substitution without circuit modification.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are continuous drain current (9A vs. 5.5A), on-state resistance (0.55 Ohm vs. 1 Ohm), power dissipation capability (110W vs. 74W), and RoHS compliance status (ROHS3 Compliant vs. RoHS non-compliant). The STB11NK40ZT4 represents an enhanced performance variant within the same voltage and package class.

Q: Are the package dimensions identical between IRF730STRR and STB11NK40ZT4?

A: Both devices use the TO-263-3 (D2PAK) Surface Mount package with identical mechanical footprints. PCB layout and component placement require no modification for substitution.

Q: Which device should be selected for new designs?

A: The STB11NK40ZT4 is recommended for new designs based on superior performance characteristics, higher inventory availability, and ROHS3 compliance status. The device maintains full electrical and mechanical compatibility while providing enhanced thermal and current handling capabilities.

Q: Does the higher gate charge of the STB11NK40ZT4 affect gate drive requirements?

A: The STB11NK40ZT4 exhibits lower gate charge (32 nC vs. 38 nC) compared to the IRF730STRR, requiring less energy for gate switching. This characteristic improves gate drive efficiency and reduces switching losses in the driver circuit.

Q: What is the significance of the different input capacitance values?

A: The STB11NK40ZT4 exhibits higher input capacitance (930 pF vs. 700 pF) at 25V. This parameter affects gate drive circuit design and switching speed. Applications with high-frequency switching requirements should evaluate gate drive capability to ensure adequate current sourcing for the higher capacitive load.

Q: Are there thermal management differences between these devices?

A: The STB11NK40ZT4 provides 49% higher power dissipation capability (110W vs. 74W) at the same junction temperature. This enhanced thermal performance reduces heatsink requirements in power-limited applications and improves thermal margin in thermally constrained designs.