IRF730BPBF N-Channel MOSFET 400V 6A Equivalent & Substitute Parts

Part Overview

The IRF730BPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 6A continuous drain current at 25°C. This device is housed in a TO-220AB through-hole package and is designed for high-voltage switching applications requiring 104W maximum power dissipation. The IRF730BPBF maintains Active product status and is ROHS3 compliant. Substitute parts are identified when equivalent electrical specifications and mechanical packaging are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	400	V
Continuous Drain Current (Id) @ 25°C	6	A (Tc)
Rds On (Max) @ Id, Vgs	1	Ohm @ 3A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	311	pF @ 100V
Power Dissipation (Max)	104	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220AB	Through Hole
Gate Voltage (Max)	±30	V

Substitute Part Grouping Explanation

Substitute parts for the IRF730BPBF are identified based on strict electrical and mechanical parameter equivalence. The substitution criteria are limited to the following parameters provided in the component specifications:

Drain to Source Voltage (Vdss): 400V
Continuous Drain Current (Id) @ 25°C: 6A (Tc)
On-State Drain Resistance (Rds On): 1 Ohm @ 3A, 10V
Gate Threshold Voltage: 5V @ 250µA
Gate Charge: 18 nC @ 10V
Input Capacitance: 311 pF @ 100V
Power Dissipation: 104W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Package: TO-220AB (Through Hole)
FET Type: N-Channel MOSFET (Metal Oxide)

Parts meeting all these electrical and mechanical specifications are classified as parametric equivalents and direct substitutes. No performance degradation occurs when substituting between parts that satisfy these criteria.

Parameter Comparison

Parameter	IRF730BPBF	SIHP6N40D-BE3	Match
Manufacturer	Vishay Siliconix	Vishay Siliconix	Yes
FET Type	N-Channel	N-Channel	Yes
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Yes
Drain to Source Voltage (Vdss)	400 V	400 V	Yes
Continuous Drain Current (Id) @ 25°C	6A (Tc)	6A (Tc)	Yes
Rds On (Max) @ Id, Vgs	1 Ohm @ 3A, 10V	1 Ohm @ 3A, 10V	Yes
Vgs(th) (Max) @ Id	5V @ 250µA	5V @ 250µA	Yes
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10V	18 nC @ 10V	Yes
Vgs (Max)	±30V	±30V	Yes
Input Capacitance (Ciss) (Max) @ Vds	311 pF @ 100V	311 pF @ 100V	Yes
Power Dissipation (Max)	104W (Tc)	104W (Tc)	Yes
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	Yes
Mounting Type	Through Hole	Through Hole	Yes
Package / Case	TO-220-3	TO-220-3	Yes
Product Status	Active	Active	Yes
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Yes
ECCN	EAR99	EAR99	Yes
HTSUS	8541.29.0095	8541.29.0095	Yes

Engineering Selection Recommendations

The SIHP6N40D-BE3 is a direct parametric equivalent to the IRF730BPBF. Both devices are manufactured by Vishay Siliconix and share identical electrical specifications across all critical parameters including voltage rating, current capacity, on-state resistance, gate characteristics, and thermal performance. Both parts maintain Active product status and are ROHS3 compliant with identical regulatory classifications (EAR99, HTSUS 8541.29.0095).

The mechanical packaging is identical: both use the TO-220AB through-hole package with TO-220-3 case designation. Moisture sensitivity levels are equivalent at MSL 1 (Unlimited). Pin configuration and thermal interface characteristics are compatible for direct board-level substitution.

Selection between these parts is based on inventory availability and supply chain considerations. The IRF730BPBF currently has 2200 pieces in stock, while the SIHP6N40D-BE3 has 1831 pieces available. Both parts are suitable for applications requiring 400V N-Channel MOSFET functionality with 6A continuous drain current and 104W power dissipation capability.

Frequently Asked Questions (FAQ)

Q: Can the SIHP6N40D-BE3 replace the IRF730BPBF in existing designs?

A: Yes. The SIHP6N40D-BE3 is a direct parametric equivalent with identical electrical specifications and mechanical packaging. No circuit modifications are required.

Q: Are the pin configurations identical between these parts?

A: Yes. Both devices use the TO-220AB package with TO-220-3 case designation, ensuring identical pin layout and thermal interface compatibility.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the IRF730BPBF and SIHP6N40D-BE3 are ROHS3 compliant, carry EAR99 export classification, and share the same HTSUS code (8541.29.0095).

Q: What is the difference in gate charge between these parts?

A: There is no difference. Both parts have a maximum gate charge of 18 nC @ 10V.

Q: Are the thermal characteristics the same?

A: Yes. Both parts have identical maximum power dissipation of 104W (Tc) and the same operating temperature range of -55°C to 150°C (TJ).

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Yes. The gate charge, input capacitance, and threshold voltage specifications are identical, making these parts interchangeable for switching frequency performance.

Q: What is the moisture sensitivity level for both parts?

A: Both parts have MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

Q: Are there any differences in on-state resistance?

A: No. Both parts have identical Rds On specifications of 1 Ohm maximum @ 3A, 10V.

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