IRF730ASTRR Equivalent & Substitute Parts

Part Overview

The IRF730ASTRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 5.5A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and dissipates up to 74W at the case temperature. This component is classified as Active product status and is RoHS non-compliant.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or when higher performance specifications within the same voltage and package class are acceptable for the application.

Substiute Parts

IRF730ASTRR

Vishay SiliconixIn Stock: 877IRF730ASTRR Datasheet

Current PartRFQ

IRF730ASTRLPBF

Vishay SiliconixIn Stock: 1530IRF730ASTRLPBF Datasheet

Parametric EquivalentRFQ

STB11NK40ZT4

STMicroelectronicsIn Stock: 2395STB11NK40ZT4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF730ASTRR are identified based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): 400V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)
• Mounting Type: Surface Mount (exact match required)
• Package / Case: TO-263 (D2PAK) (exact match required)
• Operating Temperature Range: -55°C to 150°C (exact match required)
• Gate Charge (Qg) @ 10V: ≤ 32 nC (allowable range)
• Input Capacitance (Ciss) @ 25V: ≤ 930 pF (allowable range)

Secondary Allowable Variations:

• Current - Continuous Drain (Id) @ 25°C: ≥ 5.5A (equal or higher acceptable)
• Rds On (Max) @ 10V: ≤ 1 Ohm (equal or lower acceptable)
• Power Dissipation (Max): ≥ 74W (equal or higher acceptable)

Substitute parts meeting all primary criteria and maintaining secondary parameter compatibility are classified as direct electrical and mechanical equivalents suitable for circuit-level replacement.

Parameter Comparison

Engineering Selection Recommendations

IRF730ASTRLPBF (Vishay Siliconix)

The IRF730ASTRLPBF is a parametric equivalent to the IRF730ASTRR with identical electrical specifications. The primary distinction is RoHS3 compliance status. This part is suitable for direct replacement in applications where RoHS compliance is required. Packaging is specified as Cut Tape (CT), which may differ from the original part's packaging configuration. Inventory availability is higher at 1443 pieces compared to 777 pieces for the IRF730ASTRR.

STB11NK40ZT4 (STMicroelectronics)

The STB11NK40ZT4 is a higher-performance substitute manufactured by STMicroelectronics using SuperMESH™ technology. This device exceeds the IRF730ASTRR specifications in continuous drain current (9A versus 5.5A), power dissipation (110W versus 74W), and on-resistance (0.55 Ohm versus 1 Ohm at rated conditions). The STB11NK40ZT4 maintains identical voltage ratings (400V Vdss) and operating temperature range (-55°C to 150°C). Gate charge and input capacitance are higher, which may affect switching characteristics in high-frequency applications. This part is ROHS3 compliant and REACH unaffected. Inventory availability is 2285 pieces. The STB11NK40ZT4 is suitable for applications where enhanced current handling and thermal performance are beneficial within the same voltage class and package footprint.

Frequently Asked Questions (FAQ)

Q: Can the IRF730ASTRLPBF be used as a direct replacement for the IRF730ASTRR?

A: Yes. The IRF730ASTRLPBF is a parametric equivalent with identical electrical specifications across all measured parameters. Both devices are N-Channel MOSFETs rated for 400V with 5.5A continuous drain current, 1 Ohm on-resistance at 10V gate drive, and identical operating temperature range. The primary difference is RoHS3 compliance status of the IRF730ASTRLPBF. Packaging configuration should be verified for compatibility with assembly equipment and board layout.

Q: Is the STB11NK40ZT4 a suitable substitute for the IRF730ASTRR?

A: The STB11NK40ZT4 is electrically compatible as a substitute within the same voltage class (400V) and package type (TO-263 D2PAK). The STB11NK40ZT4 provides higher performance specifications: 9A continuous drain current versus 5.5A, 110W power dissipation versus 74W, and lower on-resistance (0.55 Ohm versus 1 Ohm). Gate charge is higher at 32 nC versus 22 nC, and input capacitance is higher at 930 pF versus 600 pF. These differences may affect switching speed and gate drive requirements. The STB11NK40ZT4 is suitable for applications where the enhanced current and thermal ratings are acceptable or beneficial.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: Drain to Source Voltage (Vdss) of 400V, N-Channel FET type, MOSFET technology, Surface Mount mounting type, TO-263 (D2PAK) package, and operating temperature range of -55°C to 150°C. Continuous drain current must be equal to or greater than 5.5A. On-resistance must be equal to or lower than 1 Ohm at 10V gate drive. Gate charge and input capacitance must remain within specified allowable ranges to maintain circuit performance.

Q: Does packaging format affect the choice between these parts?

A: Packaging format refers to the supply configuration (Cut Tape, Digi-Reel, or bulk). The IRF730ASTRR packaging is not specified in detail, while IRF730ASTRLPBF is supplied in Cut Tape (CT) and STB11NK40ZT4 is supplied in Cut Tape (CT) and Digi-Reel®. The physical package type (TO-263 D2PAK) is identical across all three parts. Packaging format selection depends on assembly process requirements and volume considerations, not electrical compatibility.

Q: Are there compliance or certification differences between these parts?

A: Yes. The IRF730ASTRR is RoHS non-compliant. Both IRF730ASTRLPBF and STB11NK40ZT4 are ROHS3 compliant. The STB11NK40ZT4 is additionally specified as REACH unaffected. All three parts are classified as EAR99 for export control purposes and share the same HTSUS code (8541.29.0095). Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all three parts.

Q: What is the impact of higher gate charge in the STB11NK40ZT4?

A: The STB11NK40ZT4 has gate charge of 32 nC at 10V compared to 22 nC for the IRF730ASTRR. Higher gate charge requires more energy to switch the device and may increase switching time. This affects gate driver design and power consumption in switching applications. The impact is application-dependent and must be evaluated based on specific circuit switching frequency and gate drive capability.

Q: What is the impact of higher input capacitance in the STB11NK40ZT4?

A: The STB11NK40ZT4 has input capacitance (Ciss) of 930 pF at 25V compared to 600 pF for the IRF730ASTRR. Higher input capacitance increases the capacitive load on the gate driver and may affect switching speed and efficiency in high-frequency applications. Circuit-level evaluation is required to determine if this parameter variation is acceptable for the intended application.