IRF730ASTRLPBF Equivalent & Substitute Parts

Part Overview

The IRF730ASTRLPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 5.5A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for applications requiring moderate power dissipation up to 74W. The part maintains Active product status and carries ROHS3 compliance with unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, design optimization, or application-specific requirements while maintaining the same package form factor and voltage/current ratings.

Substiute Parts

IRF730ASTRLPBF
Vishay SiliconixIn Stock: 1530IRF730ASTRLPBF Datasheet
IRF730ASTRLPBF
Current Part
STB11NK40ZT4
STMicroelectronicsIn Stock: 2395STB11NK40ZT4 Datasheet
STB11NK40ZT4
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 5.5 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1 Ohm @ 3.3A, 10V
Power Dissipation (Max) 74 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRF730ASTRLPBF is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): 400V minimum
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Surface Mount
  • Package Form Factor: TO-263 (D2PAK) compatible
  • Operating Temperature Range: -55°C to 150°C minimum
  • RoHS Compliance: ROHS3 Compliant

Performance Consideration Parameters:

  • Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 5.5A
  • Drive Voltage: 10V gate drive compatibility
  • Power Dissipation: Equal to or greater than 74W

The STB11NK40ZT4 from STMicroelectronics meets all critical matching parameters and exceeds performance specifications with 9A continuous drain current and 110W power dissipation, while maintaining identical voltage ratings, package compatibility, and compliance certifications.

Parameter Comparison

Parameter IRF730ASTRLPBF (Vishay) STB11NK40ZT4 (STMicroelectronics) Unit
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 400 V
Current - Continuous Drain (Id) @ 25°C 5.5 9 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Vgs(th) (Max) @ Id 4.5 @ 250µA 4.5 @ 100µA V @ µA
Vgs (Max) ±30 ±30 V
Power Dissipation (Max) 74 110 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IRF730ASTRLPBF Selection Criteria: The IRF730ASTRLPBF is selected when the application requires the specific on-resistance characteristics (1 Ohm @ 3.3A, 10V) and lower gate charge (22 nC @ 10V) of the Vishay Siliconix design. This part maintains Active product status with established supply chain availability (1443 pieces in stock). ROHS3 compliance and MSL 1 rating support standard manufacturing and storage conditions without special handling requirements.

STB11NK40ZT4 Selection Criteria: The STB11NK40ZT4 is selected when the application benefits from enhanced current handling (9A continuous drain current) and increased power dissipation capability (110W). The SuperMESH™ series technology provides improved on-resistance performance (550 mOhm @ 4.5A, 10V) relative to current rating. This part maintains Active product status with higher inventory availability (2285 pieces in stock). ROHS3 compliance, MSL 1 rating, and REACH Unaffected status provide full regulatory alignment.

Both parts are suitable for direct substitution in applications operating within the specified voltage and temperature ranges. Selection between these parts depends on whether the application requires the specific electrical characteristics of either manufacturer's design or benefits from the performance enhancements offered by the STB11NK40ZT4.

Frequently Asked Questions (FAQ)

Q: Can the STB11NK40ZT4 directly replace the IRF730ASTRLPBF in existing designs?

A: Yes. Both parts share identical Vdss (400V), Vgs(th) (4.5V), Vgs (Max) (±30V), operating temperature range (-55°C to 150°C), and TO-263 (D2PAK) package form factor. The STB11NK40ZT4 provides equal or superior performance across all critical parameters.

Q: What are the key differences between these two parts?

A: The STB11NK40ZT4 offers higher continuous drain current (9A versus 5.5A) and greater power dissipation capability (110W versus 74W). The STB11NK40ZT4 exhibits lower on-resistance per ampere (550 mOhm @ 4.5A versus 1 Ohm @ 3.3A) and higher gate charge (32 nC versus 22 nC). Input capacitance is also higher in the STB11NK40ZT4 (930 pF versus 600 pF @ 25V).

Q: Are both parts RoHS compliant?

A: Yes. Both the IRF730ASTRLPBF and STB11NK40ZT4 are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, supporting standard manufacturing and storage without special handling.

Q: What is the package compatibility between these parts?

A: Both parts use the TO-263-3 (D2PAK) Surface Mount package with 2 leads plus tab configuration. They are mechanically and electrically compatible for PCB layout and thermal management purposes.

Q: Which part should be selected for new designs?

A: Selection depends on application requirements. For applications requiring the specific on-resistance and gate charge characteristics of the Vishay design, select the IRF730ASTRLPBF. For applications benefiting from higher current capacity and power dissipation, select the STB11NK40ZT4. Both parts maintain Active product status and full regulatory compliance.

Q: Are there any gate drive voltage differences?

A: Both parts operate with 10V drive voltage for maximum on-resistance specification. Gate threshold voltage (Vgs(th)) is identical at 4.5V, and maximum gate voltage (Vgs Max) is ±30V for both parts.

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