IRF730ASTRL Equivalent & Substitute Parts

Part Overview

The IRF730ASTRL is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 5.5A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and dissipates up to 74W at the case temperature. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	400	V
Current - Continuous Drain (Id) @ 25°C	5.5	A (Tc)
Rds On (Max) @ Id, Vgs	1	Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22	nC @ 10V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-263 (D2PAK)	—

Substitute Part Grouping Explanation

Substitution of the IRF730ASTRL is determined by electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The critical parameters governing substitution are:

Electrical Parameters:

Drain to Source Voltage (Vdss): 400V minimum
Continuous Drain Current (Id): 5.5A minimum at 25°C
Gate-Source Voltage (Vgs): ±30V maximum rating
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Parameters:

Mounting Type: Surface Mount
Package: TO-263 (D2PAK) or equivalent footprint

Substitute parts are grouped into two categories:

Parametric Equivalents maintain identical or superior electrical specifications with the same package footprint. These parts are direct replacements with no circuit redesign required.

Manufacturer Recommended Substitute offers enhanced performance characteristics (higher current rating and power dissipation) while maintaining voltage and temperature specifications. This part is suitable for applications where the IRF730ASTRL specifications are met or exceeded.

Parameter Comparison

Parameter	IRF730ASTRL	IRF730ASTRLPBF	IRF730ASTRR	STB11NK40ZT4
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	STMicroelectronics
Product Status	Obsolete	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	400	400	400	400
Id @ 25°C (A)	5.5	5.5	5.5	9
Rds On (Max) @ Id, Vgs (Ohm)	1 @ 3.3A, 10V	1 @ 3.3A, 10V	1 @ 3.3A, 10V	0.55 @ 4.5A, 10V
Vgs(th) (Max) @ Id (V)	4.5 @ 250µA	4.5 @ 250µA	4.5 @ 250µA	4.5 @ 100µA
Gate Charge (Qg) (Max) @ Vgs (nC)	22 @ 10V	22 @ 10V	22 @ 10V	32 @ 10V
Vgs (Max) (V)	±30	±30	±30	±30
Input Capacitance (Ciss) (Max) @ Vds (pF)	600 @ 25V	600 @ 25V	600 @ 25V	930 @ 25V
Power Dissipation (Max) (W)	74	74	74	110
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK
RoHS Status	Non-compliant	ROHS3 Compliant	Non-compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRF730ASTRLPBF is the primary parametric equivalent for the IRF730ASTRL. This part maintains identical electrical specifications and package configuration while offering active product status and ROHS3 compliance. The IRF730ASTRLPBF is supplied in Cut Tape (CT) packaging and represents a direct replacement with no circuit modifications required.

IRF730ASTRR is an alternative parametric equivalent from Vishay Siliconix with identical electrical and mechanical specifications to the IRF730ASTRL. This part carries active product status but does not meet ROHS3 compliance requirements. Selection of this part is appropriate for applications where RoHS compliance is not mandated.

STB11NK40ZT4 is the manufacturer-recommended substitute from STMicroelectronics. This part exceeds the IRF730ASTRL specifications with 9A continuous drain current (versus 5.5A), 110W power dissipation (versus 74W), and lower on-resistance of 550mOhm at 4.5A, 10V. The STB11NK40ZT4 features SuperMESH™ technology and carries ROHS3 compliance. Higher gate charge (32nC versus 22nC) and input capacitance (930pF versus 600pF) require verification of gate drive circuit capability. This part is suitable for applications requiring enhanced thermal performance or higher current handling within the 400V voltage class.

Frequently Asked Questions (FAQ)

Q: Can the IRF730ASTRLPBF be used as a direct replacement for the IRF730ASTRL?

A: Yes. The IRF730ASTRLPBF maintains identical electrical specifications including Vdss, Id, Rds On, Vgs(th), gate charge, and power dissipation. Both parts use the TO-263 (D2PAK) package with identical pinout and footprint. The primary difference is product status (active versus obsolete) and RoHS compliance (ROHS3 versus non-compliant). No circuit modifications are required.

Q: What are the differences between the IRF730ASTRR and IRF730ASTRLPBF?

A: Both parts are parametric equivalents with identical electrical specifications. The IRF730ASTRR does not carry ROHS3 compliance, whereas the IRF730ASTRLPBF is ROHS3 compliant. Selection depends on regulatory requirements for the end application. Electrical performance and package compatibility are equivalent.

Q: Is the STB11NK40ZT4 a direct replacement for the IRF730ASTRL?

A: The STB11NK40ZT4 is electrically compatible but offers enhanced performance. It maintains the 400V Vdss rating and -55°C to 150°C operating range. However, it provides higher continuous drain current (9A versus 5.5A), lower on-resistance (550mOhm versus 1Ohm), and higher power dissipation (110W versus 74W). The gate charge is higher (32nC versus 22nC) and input capacitance is higher (930pF versus 600pF). Gate drive circuits must be verified for compatibility with these increased capacitive loads. The part is suitable for applications where the IRF730ASTRL specifications are met or exceeded.

Q: Are all substitute parts available in the same package?

A: Yes. The IRF730ASTRLPBF, IRF730ASTRR, and STB11NK40ZT4 are all housed in TO-263 (D2PAK) or equivalent D2PAK packages with identical Surface Mount footprints. PCB layout modifications are not required for substitution.

Q: What is the impact of higher gate charge in the STB11NK40ZT4?

A: The STB11NK40ZT4 has a gate charge of 32nC at 10V compared to 22nC for the IRF730ASTRL. Higher gate charge requires longer switching times and increased gate drive current. Gate drive circuits must be verified to supply sufficient current and voltage to achieve the desired switching performance. This parameter does not affect DC operation but impacts switching frequency and efficiency in dynamic applications.

Q: Are there RoHS compliance considerations for part selection?

A: The IRF730ASTRL and IRF730ASTRR are RoHS non-compliant. The IRF730ASTRLPBF and STB11NK40ZT4 are ROHS3 compliant. Applications subject to RoHS regulations require selection of compliant parts. The IRF730ASTRLPBF is the recommended choice for RoHS-regulated applications requiring direct electrical equivalence.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message