IRF7306PBF Equivalent & Substitute Parts

Part Overview

The IRF7306PBF is a dual P-channel MOSFET array manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 3.6A continuous drain current. This component is configured as a 2 P-Channel logic level gate MOSFET in an 8-SOIC surface mount package. The IRF7306PBF is discontinued at DiGi Electronics, necessitating identification of functionally equivalent substitute components for ongoing design support and procurement.

Substiute Parts

IRF7306PBF
Infineon TechnologiesIn Stock: 10145IRF7306PBF Datasheet
IRF7306PBF
Current Part
AO4803A
Alpha & Omega Semiconductor Inc.In Stock: 210430AO4803A Datasheet
AO4803A
MFR Recommended
DMP3085LSD-13
Diodes IncorporatedIn Stock: 5436DMP3085LSD-13 Datasheet
DMP3085LSD-13
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.6 A
Rds On (Max) @ Id, Vgs 100 mOhm @ 1.8A, 10V mOhm
Vgs(th) (Max) @ Id 1 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25V
Power - Max 2 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 P-Channel (Dual)
Package / Case 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRF7306PBF is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain to Source Voltage (Vdss): 30V minimum
  • Configuration: 2 P-Channel (Dual) MOSFET array
  • Package / Case: 8-SOIC surface mount form factor
  • FET Feature: Logic Level Gate
  • Operating Temperature Range: -55°C to 150°C minimum

Performance Compatibility Criteria:

  • Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 3.6A
  • Rds On (Max): Equal to or lower than 100 mOhm (lower values indicate improved performance)
  • Gate Charge (Qg): Lower values preferred for faster switching
  • Input Capacitance (Ciss): Lower values preferred for reduced gate drive requirements

The identified substitute parts meet all mandatory matching criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter IRF7306PBF (Main) AO4803A (Substitute) DMP3085LSD-13 (Substitute) Unit
Manufacturer Infineon Technologies Alpha & Omega Semiconductor Inc. Diodes Incorporated
Drain to Source Voltage (Vdss) 30 30 30 V
Current - Continuous Drain (Id) @ 25°C 3.6 5 3.9 A
Rds On (Max) @ Id, Vgs 100 @ 1.8A, 10V 46 @ 5A, 10V 70 @ 5.3A, 10V mOhm
Vgs(th) (Max) @ Id 1 @ 250µA 2.5 @ 250µA 3 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 25 @ 10V 11 @ 10V 11 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 440 @ 25V 520 @ 15V 563 @ 25V pF
Power - Max 2 2 1.1 W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Package / Case 8-SOIC 8-SOIC 8-SOIC
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Discontinued at DiGi Electronics Not For New Designs Active

Engineering Selection Recommendations

AO4803A (Alpha & Omega Semiconductor Inc.)

The AO4803A provides superior electrical performance with lower on-resistance (46 mOhm vs. 100 mOhm) and higher continuous drain current rating (5A vs. 3.6A). Gate charge is reduced to 11 nC, enabling faster switching response. However, the AO4803A carries a "Not For New Designs" product status designation. This part is suitable for replacement in existing designs where the IRF7306PBF is no longer available, provided that procurement and long-term availability can be secured through alternative channels.

DMP3085LSD-13 (Diodes Incorporated)

The DMP3085LSD-13 maintains electrical compatibility with the IRF7306PBF across all critical parameters. Continuous drain current is rated at 3.9A, marginally exceeding the original 3.6A specification. On-resistance is 70 mOhm at 5.3A and 10V, representing an improvement over the original 100 mOhm specification. Gate charge is reduced to 11 nC. The DMP3085LSD-13 carries an "Active" product status, indicating ongoing manufacturer support and availability. This part is the preferred substitute for new procurement and design continuity.

Both substitute parts maintain identical package form factor (8-SOIC), operating temperature range (-55°C to 150°C), and regulatory compliance (ROHS3, MSL 1). Selection between these substitutes depends on product lifecycle requirements and procurement availability.

Frequently Asked Questions (FAQ)

Q: Can the AO4803A or DMP3085LSD-13 be used as direct replacements for the IRF7306PBF without circuit modification?

A: Both substitute parts are pin-compatible and functionally equivalent within the specified electrical parameters. The 8-SOIC package dimensions are identical (0.154", 3.90mm width). No circuit modification is required for direct substitution. However, the improved electrical characteristics (lower on-resistance, reduced gate charge) may result in different thermal and switching behavior in the application circuit.

Q: What is the significance of the "Not For New Designs" status on the AO4803A?

A: This designation indicates that the manufacturer (Alpha & Omega Semiconductor Inc.) is not recommending this part for new product development. While the part remains functionally suitable for replacement applications, long-term availability and design support may be limited. The DMP3085LSD-13, with "Active" status, is the recommended choice for applications requiring extended product lifecycle support.

Q: Are there differences in gate threshold voltage (Vgs(th)) between the main part and substitutes?

A: Yes. The IRF7306PBF specifies Vgs(th) at 1V maximum, while the AO4803A specifies 2.5V and the DMP3085LSD-13 specifies 3V. These differences indicate varying gate drive requirements. Applications using marginal gate drive voltages must verify that the higher threshold voltages of the substitute parts remain compatible with the available gate drive signal.

Q: How do the power dissipation ratings compare?

A: The IRF7306PBF and AO4803A are both rated at 2W maximum power dissipation. The DMP3085LSD-13 is rated at 1.1W maximum. In applications approaching the thermal limits of the original design, the DMP3085LSD-13 may require additional thermal management or circuit derating.

Q: Are all three parts RoHS compliant?

A: Yes. The IRF7306PBF, AO4803A, and DMP3085LSD-13 are all ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). All parts are suitable for applications requiring regulatory compliance with RoHS directives.

Q: What is the primary advantage of the DMP3085LSD-13 over the AO4803A?

A: The DMP3085LSD-13 carries an "Active" product status from Diodes Incorporated, indicating ongoing manufacturer support, design updates, and long-term availability. The AO4803A, designated "Not For New Designs," may face future discontinuation or limited availability. For applications requiring sustained procurement and design continuity, the DMP3085LSD-13 is the preferred substitute.

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