IRF7304TR Equivalent & Substitute Parts

Part Overview

The IRF7304TR is a dual P-channel MOSFET array manufactured by Infineon Technologies, configured as a 2P-CH device with a maximum drain-source voltage rating of 20V and continuous drain current of 4.3A. This component is packaged in an 8-SO surface mount configuration and belongs to the HEXFET® series. The IRF7304TR is classified as obsolete, necessitating identification of functionally equivalent substitute components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, gate characteristics, and thermal operating range while accommodating modern compliance standards.

Substiute Parts

IRF7304TR
Infineon TechnologiesIn Stock: 2441IRF7304TR Datasheet
IRF7304TR
Current Part
DMG9933USD-13
Diodes IncorporatedIn Stock: 3882DMG9933USD-13 Datasheet
DMG9933USD-13
MFR Recommended
FDS9933A
onsemiIn Stock: 7900FDS9933A Datasheet
FDS9933A
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 4.3 A
On-Resistance (Rds On) @ Id, Vgs 90 mOhm @ 2.2A, 4.5V mOhm
Gate Threshold Voltage (Vgs(th)) @ Id 700 mV @ 250µA
Gate Charge (Qg) @ Vgs 22 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 610 pF @ 15V
Maximum Power Dissipation 2 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 P-Channel (Dual)
Package Type 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7304TR is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain-Source Voltage (Vdss): Must equal 20V
  • Configuration: Must be 2 P-Channel (Dual) MOSFET array
  • Package: Must be 8-SOIC (0.154", 3.90mm Width) surface mount
  • FET Feature: Must be Logic Level Gate
  • Operating Temperature Range: Must span -55°C to 150°C (TJ)

Functional Compatibility Parameters:

  • Continuous Drain Current (Id): Substitute must meet or exceed 4.3A
  • On-Resistance (Rds On): Lower or equal values are acceptable
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with logic-level gate drive circuits
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Lower values improve switching performance

The identified substitute parts DMG9933USD-13 and FDS9933A satisfy all critical matching parameters and provide equivalent or superior electrical performance across functional compatibility parameters.

Parameter Comparison

Parameter IRF7304TR (Infineon) DMG9933USD-13 (Diodes Inc.) FDS9933A (onsemi)
Manufacturer Part Number IRF7304TR DMG9933USD-13 FDS9933A
Drain-Source Voltage (Vdss) 20V 20V 20V
Continuous Drain Current (Id) @ 25°C 4.3A 4.6A 3.8A
On-Resistance (Rds On) @ Id, Vgs 90 mOhm @ 2.2A, 4.5V 75 mOhm @ 4.8A, 4.5V 75 mOhm @ 3.8A, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id 700 mV @ 250µA 1.1V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 22 nC @ 4.5V 6.5 nC @ 4.5V 10 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 610 pF @ 15V 608.4 pF @ 6V 600 pF @ 10V
Maximum Power Dissipation 2W 1.15W 900 mW
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) -55°C to 150°C (TJ)
Configuration 2 P-Channel (Dual) 2 P-Channel (Dual) 2 P-Channel (Dual)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

DMG9933USD-13 (Diodes Incorporated): This substitute provides the highest continuous drain current rating at 4.6A, exceeding the IRF7304TR specification of 4.3A. The on-resistance of 75 mOhm at 4.8A, 4.5V represents a 17% improvement over the original part. Gate charge is significantly reduced to 6.5 nC, resulting in lower switching losses. The component is ROHS3 compliant and maintains active product status, ensuring long-term availability and supply chain stability. This part is suitable for applications where improved thermal performance and reduced switching losses are beneficial.

FDS9933A (onsemi): This substitute maintains compatibility with the IRF7304TR across all critical parameters. The on-resistance of 75 mOhm at 3.8A, 4.5V provides equivalent performance at the specified current level. Gate charge of 10 nC is lower than the original part, improving switching efficiency. The component is ROHS3 compliant and carries active product status. This part is suitable for direct replacement in existing designs where the 3.8A continuous drain current rating is sufficient for the application.

Compliance Considerations: Both substitute parts are ROHS3 compliant, addressing environmental and regulatory requirements that the obsolete IRF7304TR does not meet. Both maintain REACH unaffected status and EAR99 export classification. The transition from an obsolete component to an active substitute ensures access to current manufacturing processes, improved documentation, and extended product lifecycle support.

Frequently Asked Questions (FAQ)

Q: Can DMG9933USD-13 and FDS9933A be used interchangeably with IRF7304TR?

A: Both parts are electrically compatible substitutes for the IRF7304TR based on matching voltage rating (20V), dual P-channel configuration, logic-level gate feature, and identical 8-SOIC package dimensions. However, they differ in continuous drain current ratings (4.6A and 3.8A respectively versus 4.3A) and on-resistance characteristics. Selection depends on application current requirements and thermal constraints.

Q: What is the impact of different gate threshold voltages?

A: The IRF7304TR has a gate threshold voltage of 700 mV, while DMG9933USD-13 and FDS9933A are rated at 1.1V and 1.5V respectively. All three parts are classified as logic-level gate devices and are compatible with standard 3.3V and 5V gate drive circuits. The higher threshold voltages of the substitute parts do not compromise logic-level operation.

Q: Are there packaging differences between these parts?

A: All three parts use identical 8-SOIC packaging with 0.154" (3.90mm) width. They are mechanically interchangeable on printed circuit boards designed for the IRF7304TR footprint.

Q: Why do the substitute parts have lower maximum power dissipation ratings?

A: DMG9933USD-13 is rated at 1.15W and FDS9933A at 900 mW, compared to the IRF7304TR at 2W. These ratings reflect thermal characteristics under specific test conditions. The lower on-resistance values of the substitute parts (75 mOhm versus 90 mOhm) result in reduced power dissipation during operation, partially offsetting the lower absolute power ratings.

Q: Which substitute part should be selected for new designs?

A: Selection between DMG9933USD-13 and FDS9933A depends on application current requirements. For applications requiring maximum current capacity, DMG9933USD-13 with 4.6A rating is preferred. For applications operating at or below 3.8A, FDS9933A provides equivalent performance. Both parts offer ROHS3 compliance and active product status, ensuring long-term availability.

Q: Are there any thermal management considerations when substituting these parts?

A: The substitute parts exhibit lower on-resistance values, which reduce resistive heating during operation. Thermal management requirements should be re-evaluated based on actual application current levels and duty cycles. Lower gate charge values in the substitute parts reduce switching losses, further improving thermal performance in high-frequency applications.

Q: What is the significance of active versus obsolete product status?

A: The IRF7304TR is classified as obsolete, indicating discontinued manufacturing and limited availability. Both substitute parts maintain active status, ensuring continued production, technical support, and supply chain availability. Active status is critical for long-term product support and design lifecycle management.

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