IRF7304PBF Equivalent & Substitute Parts

Part Overview

The IRF7304PBF is a dual P-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic level gate control. This device integrates two P-channel MOSFETs in an 8-SOIC package with a maximum drain-source voltage rating of 20V and continuous drain current capability of 4.3A at 25°C.

The IRF7304PBF has been discontinued at DiGi Electronics. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure component availability, and support ongoing production requirements for applications utilizing this MOSFET configuration.

Substiute Parts

IRF7304PBF

Infineon TechnologiesIn Stock: 2086IRF7304PBF Datasheet

Current PartRFQ

DMG9933USD-13

Diodes IncorporatedIn Stock: 3882DMG9933USD-13 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF7304PBF is determined by the following critical parameters:

Mandatory Matching Parameters:

• Configuration: 2 P-Channel (Dual) — the substitute must maintain identical channel configuration
• Drain to Source Voltage (Vdss): 20V — voltage rating must be equal or greater
• Package / Case: 8-SOIC (0.154", 3.90mm Width) — physical footprint must be identical for PCB compatibility
• FET Feature: Logic Level Gate — gate drive characteristics must be compatible
• Operating Temperature Range: -55°C ~ 150°C (TJ) — thermal operating window must be met or exceeded

Performance Parameters (Allowable Variation):

• Current - Continuous Drain (Id) @ 25°C: Substitute must meet or exceed 4.3A
• Rds On (Max): Lower values are acceptable; higher values require verification against application requirements
• Gate Charge (Qg): Lower values indicate improved switching performance

The DMG9933USD-13 from Diodes Incorporated meets all mandatory matching parameters and exceeds performance specifications in continuous drain current (4.6A vs. 4.3A) and on-state resistance (75mOhm vs. 90mOhm).

Parameter Comparison

Engineering Selection Recommendations

DMG9933USD-13 as Primary Substitute:

The DMG9933USD-13 from Diodes Incorporated is a direct functional substitute for the IRF7304PBF. Both devices are ROHS3 compliant, REACH unaffected, and carry identical moisture sensitivity ratings (MSL 1 - Unlimited), ensuring regulatory and environmental compliance equivalence.

The substitute maintains identical voltage rating (20V Vdss), package form factor (8-SOIC), and operating temperature range (-55°C to 150°C junction temperature). The DMG9933USD-13 demonstrates superior electrical performance with higher continuous drain current (4.6A vs. 4.3A) and lower on-state resistance (75mOhm vs. 90mOhm), resulting in reduced power dissipation and improved thermal efficiency.

The DMG9933USD-13 is currently in active production status with 3800 pieces available in inventory, providing immediate supply chain continuity compared to the discontinued IRF7304PBF.

Application-Specific Considerations:

The lower maximum power rating of the DMG9933USD-13 (1.15W vs. 2W) requires evaluation against actual application thermal requirements. The higher gate threshold voltage (1.1V vs. 700mV) may affect gate drive circuit design in applications with marginal gate voltage margins. The significantly lower gate charge (6.5nC vs. 22nC) provides faster switching characteristics, which may require gate drive circuit adjustment to prevent overshoot or ringing in sensitive applications.

Frequently Asked Questions (FAQ)

Q: Can the DMG9933USD-13 be used as a direct drop-in replacement for the IRF7304PBF?

A: The DMG9933USD-13 is electrically and mechanically compatible with the IRF7304PBF for applications where the specified electrical parameters are met. Both devices share identical package geometry (8-SOIC), voltage rating (20V), configuration (dual P-channel), and operating temperature range. PCB layout and component placement require no modification. However, gate drive circuit parameters may require adjustment due to differences in gate charge and threshold voltage.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Continuous drain current: DMG9933USD-13 provides 4.6A versus IRF7304PBF 4.3A; (2) On-state resistance: DMG9933USD-13 is 75mOhm versus IRF7304PBF 90mOhm; (3) Gate charge: DMG9933USD-13 is 6.5nC versus IRF7304PBF 22nC; (4) Maximum power dissipation: DMG9933USD-13 is 1.15W versus IRF7304PBF 2W; (5) Gate threshold voltage: DMG9933USD-13 is 1.1V versus IRF7304PBF 700mV. The substitute offers improved current handling and reduced on-state losses but with lower maximum power rating and higher gate threshold.

Q: Are there any compliance or certification differences?

A: Both parts carry identical compliance certifications: ROHS3 compliant, REACH unaffected, and MSL 1 (Unlimited moisture sensitivity level). No compliance barriers exist for substitution.

Q: What is the impact of lower gate charge on my application?

A: Lower gate charge (6.5nC vs. 22nC) in the DMG9933USD-13 results in faster switching transitions and reduced gate drive power requirements. This may reduce switching losses and improve overall circuit efficiency. However, faster switching may increase electromagnetic interference (EMI) and require gate drive circuit optimization to prevent ringing or overshoot, particularly in high-frequency applications or circuits with long gate drive traces.

Q: How does the higher gate threshold voltage affect circuit design?

A: The DMG9933USD-13 has a higher gate threshold voltage (1.1V vs. 700mV). This requires a higher minimum gate voltage to achieve full device conduction. Applications with marginal gate voltage supplies or circuits designed for the lower threshold of the IRF7304PBF may require gate drive circuit adjustment to ensure adequate gate overdrive and reliable switching performance.

Q: Is the lower maximum power rating of the DMG9933USD-13 a limitation?

A: The DMG9933USD-13 has a lower maximum power rating (1.15W vs. 2W). This reflects thermal dissipation limits under worst-case conditions. For most applications, the superior on-state resistance (75mOhm vs. 90mOhm) of the substitute results in lower actual power dissipation during normal operation. Applications requiring sustained operation at maximum power levels should evaluate thermal performance through detailed power dissipation calculations based on actual duty cycle and gate drive conditions.

Q: What is the availability status of each part?

A: The IRF7304PBF is discontinued at DiGi Electronics with no active production. The DMG9933USD-13 is in active production status with 3800 pieces currently in inventory, providing immediate availability and long-term supply chain security.