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IRF7304 MOSFET Equivalent & Substitute Parts
Part Overview
The IRF7304 is a dual P-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications in the 8-SO package. This device features logic level gate operation with a maximum drain-source voltage rating of 20V and continuous drain current of 4.3A at 25°C. The IRF7304 is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the standardized 8-SO package footprint.
Substiute Parts
Key Parameters
| Parameter | IRF7304 Specification |
|---|---|
| Drain to Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) @ 25°C | 4.3A |
| On-State Resistance (Rds On) @ Id, Vgs | 90mOhm @ 2.2A, 4.5V |
| Gate Threshold Voltage (Vgs(th)) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) @ Vgs | 22nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 610pF @ 15V |
| Maximum Power Dissipation | 2W |
| Operating Temperature Range | -55°C to 150°C (TJ) |
| Configuration | 2 P-Channel (Dual) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| FET Feature | Logic Level Gate |
Substitute Part Grouping Explanation
Substitution eligibility for the IRF7304 is determined by strict adherence to the following electrical and mechanical parameters:
Critical Matching Parameters:
- Drain to Source Voltage (Vdss): Must equal 20V
- Configuration: Must be 2 P-Channel (Dual) in 8-SO/8-SOIC package
- Mounting Type: Surface Mount required
- FET Feature: Logic Level Gate operation
- Package Footprint: 8-SOIC (0.154", 3.90mm Width)
- Operating Temperature Range: Must support -55°C to 150°C
Performance Parameters for Compatibility Assessment:
- Continuous Drain Current (Id): Substitute must meet or exceed 4.3A
- On-State Resistance (Rds On): Lower values indicate improved performance
- Gate Charge (Qg): Lower values reduce switching losses
- Input Capacitance (Ciss): Affects gate drive requirements
- Maximum Power Dissipation: Thermal capability consideration
The identified substitute parts (DMG9933USD-13 and FDS9933A) satisfy all critical matching parameters and provide equivalent or superior electrical performance characteristics within the specified operating envelope.
Parameter Comparison
| Parameter | IRF7304 (Infineon) | DMG9933USD-13 (Diodes Inc.) | FDS9933A (onsemi) |
|---|---|---|---|
| Manufacturer Part Number | IRF7304 | DMG9933USD-13 | FDS9933A |
| Product Status | Obsolete | Active | Active |
| Drain to Source Voltage (Vdss) | 20V | 20V | 20V |
| Continuous Drain Current (Id) @ 25°C | 4.3A | 4.6A | 3.8A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 4.5V | 75mOhm @ 4.8A, 4.5V | 75mOhm @ 3.8A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA | 1.1V @ 250µA | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V | 6.5nC @ 4.5V | 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V | 608.4pF @ 6V | 600pF @ 10V |
| Maximum Power Dissipation | 2W | 1.15W | 900mW |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) |
| Configuration | 2 P-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
DMG9933USD-13 (Diodes Incorporated): This substitute provides the highest current rating (4.6A) and lowest on-state resistance (75mOhm @ 4.8A, 4.5V) among available alternatives. The device is ROHS3 compliant and maintains active product status, ensuring long-term availability and supply chain stability. Gate charge is significantly reduced (6.5nC) compared to the IRF7304, resulting in lower switching losses and improved efficiency in gate-driven applications. Suitable for applications where maximum current capacity and thermal efficiency are prioritized.
FDS9933A (onsemi): This substitute maintains active product status with ROHS3 compliance and PowerTrench® technology integration. The continuous drain current rating (3.8A) is lower than the IRF7304 but remains within acceptable margins for applications not requiring maximum current capacity. On-state resistance (75mOhm @ 3.8A, 4.5V) matches the DMG9933USD-13 specification. Gate charge (10nC) and input capacitance (600pF) are comparable to substitute alternatives. Suitable for applications with moderate current requirements and established onsemi supply relationships.
Compliance Considerations: Both substitute parts achieve ROHS3 compliance, addressing regulatory requirements absent in the obsolete IRF7304. Selection between DMG9933USD-13 and FDS9933A should be based on application current requirements, thermal management capabilities, and established supplier relationships. The IRF7304 remains electrically compatible with both substitutes within the specified parameter envelope.
Frequently Asked Questions (FAQ)
Q: Can the DMG9933USD-13 or FDS9933A be used as direct replacements for the IRF7304 in existing designs?
A: Both parts are electrically compatible substitutes within the specified parameter envelope. The 8-SOIC package footprint, pin configuration, and logic level gate operation are identical. However, thermal management differences (1.15W and 900mW maximum power dissipation versus 2W for the IRF7304) must be evaluated in applications operating at maximum power levels. Gate charge differences (6.5nC and 10nC versus 22nC) may affect gate drive circuit performance.
Q: What are the key differences between DMG9933USD-13 and FDS9933A?
A: The primary differences are continuous drain current rating (4.6A versus 3.8A), gate threshold voltage (1.1V versus 1.5V), and gate charge (6.5nC versus 10nC). The DMG9933USD-13 offers higher current capacity and lower switching losses. The FDS9933A provides a mid-range alternative with established onsemi supply channels. Both maintain identical voltage ratings, package specifications, and operating temperature ranges.
Q: Are there any package compatibility concerns when substituting these parts?
A: No. All three devices (IRF7304, DMG9933USD-13, and FDS9933A) utilize the 8-SOIC package with identical 0.154" (3.90mm) width specifications. PCB footprints and reflow soldering profiles are directly compatible. No layout modifications are required for mechanical substitution.
Q: How do gate charge differences impact circuit design?
A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The IRF7304 requires 22nC, while substitutes require 6.5nC (DMG9933USD-13) or 10nC (FDS9933A). Lower gate charge reduces gate drive current requirements and switching losses, potentially allowing use of lower-power gate driver circuits. Existing gate drive circuits designed for the IRF7304 will operate with reduced power dissipation when driving substitute parts.
Q: What thermal management considerations apply to these substitutes?
A: The IRF7304 is rated for 2W maximum power dissipation, while DMG9933USD-13 and FDS9933A are rated for 1.15W and 900mW respectively. In applications operating near maximum power levels, thermal management must account for these reduced ratings. Lower on-state resistance values (75mOhm for both substitutes versus 90mOhm for IRF7304) reduce conduction losses, partially offsetting the lower power dissipation ratings in current-limited applications.
Q: Are there compliance or supply chain advantages to using substitute parts?
A: Yes. Both DMG9933USD-13 and FDS9933A maintain active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The IRF7304 is classified as obsolete, creating supply chain risk and regulatory non-compliance in new designs. Substitution to active parts eliminates obsolescence concerns and satisfies current environmental regulations.
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