IRF730 N-Channel MOSFET 400V 5.5A Equivalent & Substitute Parts

Part Overview

The IRF730 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 400V drain-to-source voltage with 5.5A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is part of the PowerMESH™ II series. The IRF730 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting the same packaging and compliance requirements.

Substiute Parts

IRF730
STMicroelectronicsIn Stock: 2707IRF730 Datasheet
IRF730
Current Part
IRF730APBF
Vishay SiliconixIn Stock: 3458IRF730APBF Datasheet
IRF730APBF
Similar
IRF730PBF
Vishay SiliconixIn Stock: 55199IRF730PBF Datasheet
IRF730PBF
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 5.5 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1 Ohm @ 3A–3.3A, 10V
Vgs (Max) ±20 to ±30 V
Power Dissipation (Max) 74–100 W (Tc)
Operating Temperature (TJ) −55 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the IRF730 are qualified based on the following electrical and mechanical parameters:

Mandatory Matching Parameters:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A–3.3A, 10V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Allowable Variation Parameters:

  • Vgs(th) (Max) @ Id: 4V–4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22–38 nC @ 10V
  • Vgs (Max): ±20V to ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 530–700 pF @ 25V
  • Power Dissipation (Max): 74–100W (Tc)
  • Operating Temperature (TJ): −55°C to 150°C

The IRF730APBF and IRF730PBF meet all mandatory matching parameters and fall within allowable variation ranges for secondary electrical characteristics. Both substitute parts are active products with confirmed inventory availability.

Parameter Comparison

Parameter IRF730 (STMicroelectronics) IRF730APBF (Vishay Siliconix) IRF730PBF (Vishay Siliconix)
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 5.5 A (Tc) 5.5 A (Tc) 5.5 A (Tc)
Drive Voltage (Max Rds On) 10 V 10 V 10 V
Rds On (Max) @ Id, Vgs 1 Ohm @ 3A, 10V 1 Ohm @ 3.3A, 10V 1 Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA 4.5 V @ 250µA 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 22 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20 V ±30 V ±20 V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V 600 pF @ 25 V 700 pF @ 25 V
Power Dissipation (Max) 100 W (Tc) 74 W (Tc) 74 W (Tc)
Operating Temperature (TJ) 150 °C −55 to 150 °C −55 to 150 °C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active Active

Engineering Selection Recommendations

IRF730APBF (Vishay Siliconix)

The IRF730APBF is an active product with 3,400 units in stock. This part maintains full electrical compatibility with the IRF730 across all critical parameters: 400V Vdss, 5.5A continuous drain current, 1 Ohm Rds On at 10V drive, and TO-220-3 through-hole packaging. The IRF730APBF offers an extended operating temperature range (−55°C to 150°C) compared to the IRF730 and carries ROHS3 compliance with MSL 1 rating. Gate charge is slightly lower at 22 nC, and input capacitance is marginally higher at 600 pF. Power dissipation is rated at 74W, which is lower than the IRF730's 100W rating. This part is suitable for applications where the lower power dissipation rating does not constrain thermal design.

IRF730PBF (Vishay Siliconix)

The IRF730PBF is an active product with 55,100 units in stock, providing the highest inventory availability among substitute options. This part meets all mandatory electrical parameters: 400V Vdss, 5.5A continuous drain current, 1 Ohm Rds On at 10V drive, and TO-220-3 through-hole packaging. The IRF730PBF carries ROHS3 compliance with MSL 1 rating and offers an extended operating temperature range (−55°C to 150°C). Gate charge is higher at 38 nC, and input capacitance is higher at 700 pF compared to the IRF730. Power dissipation is rated at 74W. The higher gate charge and input capacitance may affect switching speed and gate drive requirements in high-frequency applications.

Both substitute parts are manufactured by Vishay Siliconix and are classified as active products, ensuring long-term availability and supply chain stability. Selection between IRF730APBF and IRF730PBF depends on gate charge and input capacitance tolerance in the target application circuit.

Frequently Asked Questions (FAQ)

Q: Can the IRF730APBF and IRF730PBF be used interchangeably with the IRF730?

A: Both parts maintain the same drain-to-source voltage (400V), continuous drain current (5.5A), on-resistance (1 Ohm at 10V drive), and TO-220-3 package. They are electrically compatible for direct substitution in applications where the specified gate charge and input capacitance variations do not affect circuit performance. The lower power dissipation rating (74W versus 100W) must be evaluated against thermal design requirements.

Q: What is the difference between IRF730APBF and IRF730PBF?

A: Both parts are Vishay Siliconix products with identical voltage, current, and on-resistance ratings. The primary differences are gate charge (22 nC for IRF730APBF versus 38 nC for IRF730PBF) and input capacitance (600 pF versus 700 pF). The IRF730PBF has significantly higher inventory availability (55,100 units versus 3,400 units). Gate charge and input capacitance affect switching speed and gate drive circuit design; applications sensitive to these parameters should select accordingly.

Q: Are the substitute parts RoHS compliant?

A: Yes. Both IRF730APBF and IRF730PBF are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the compliance profile of the original IRF730.

Q: What is the operating temperature range for substitute parts?

A: Both IRF730APBF and IRF730PBF operate from −55°C to 150°C junction temperature, providing an extended lower temperature range compared to the IRF730, which is specified to 150°C maximum.

Q: Can I use these parts in high-frequency switching applications?

A: Gate charge and input capacitance directly affect switching speed and gate drive requirements. The IRF730APBF has lower gate charge (22 nC) and input capacitance (600 pF), making it more suitable for high-frequency applications. The IRF730PBF has higher values (38 nC and 700 pF), which may require gate drive circuit adjustment for equivalent switching performance.

Q: What is the power dissipation difference, and does it matter?

A: The IRF730 is rated for 100W power dissipation, while both substitute parts are rated for 74W. Applications operating near the 100W limit must verify that thermal design accommodates the lower rating. For most applications operating below 74W, this difference is not a constraint.

Q: Are these parts available in other packages?

A: The IRF730APBF and IRF730PBF are specified only in TO-220-3 through-hole packaging, matching the original IRF730 package requirement.

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