IRF7241PBF P-Channel MOSFET 40V 6.2A Equivalent & Substitute Parts

Part Overview

The IRF7241PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 6.2A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7241PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and production requirements. Suitable alternatives must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging specifications.

Substiute Parts

IRF7241PBF
Infineon TechnologiesIn Stock: 1437IRF7241PBF Datasheet
IRF7241PBF
Current Part
FDS4685
onsemiIn Stock: 18602FDS4685 Datasheet
FDS4685
Direct
AO4443
Alpha & Omega Semiconductor Inc.In Stock: 15336AO4443 Datasheet
AO4443
MFR Recommended
DMP4050SSS-13
Diodes IncorporatedIn Stock: 15212DMP4050SSS-13 Datasheet
DMP4050SSS-13
MFR Recommended
IRF9Z14SPBF
Vishay SiliconixIn Stock: 1830IRF9Z14SPBF Datasheet
IRF9Z14SPBF
MFR Recommended
ZXMP3A16N8TA
Diodes IncorporatedIn Stock: 6500ZXMP3A16N8TA Datasheet
ZXMP3A16N8TA
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 6.2 A
Rds On (Max) @ Id, Vgs 41 mOhm @ 6.2A, 10V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10V
Power Dissipation (Max) 2.5 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the IRF7241PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

  • FET Type: P-Channel topology
  • Drain to Source Voltage (Vdss): 40V minimum rating
  • Continuous Drain Current (Id): Equal to or greater than 6.2A
  • Package / Case: 8-SOIC surface mount configuration
  • Operating Temperature Range: -55°C to 150°C minimum
  • RoHS3 Compliance and REACH Unaffected status

Secondary Compatibility Parameters:

  • Rds On (Max): Lower or equal values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Power Dissipation: Equal to or greater than 2.5W (Ta)
  • Vgs(th) and Vgs (Max): Must remain within ±20V gate voltage specification

Substitutes are grouped into two categories: Direct Electrical Equivalents (matching all critical parameters within 8-SOIC package) and Functional Alternatives (meeting electrical requirements with package variations).

Parameter Comparison

Parameter IRF7241PBF (Main) FDS4685 AO4443 DMP4050SSS-13 IRF9Z14SPBF ZXMP3A16N8TA
Manufacturer Infineon onsemi Alpha & Omega Diodes Inc. Vishay Siliconix Diodes Inc.
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Vdss (V) 40 40 40 40 60 30
Id @ 25°C (A) 6.2 8.2 6.0 4.4 6.7 5.6
Rds On (Max) (mOhm) 41 @ 6.2A, 10V 27 @ 8.2A, 10V 42 @ 6A, 10V 50 @ 6A, 10V 500 @ 4A, 10V 40 @ 4.2A, 10V
Qg (Max) (nC) 80 @ 10V 27 @ 5V 22 @ 10V 13.9 @ 10V 12 @ 10V 29.6 @ 10V
Power Dissipation (W) 2.5 (Ta) 2.5 (Ta) 3.1 (Ta) 1.56 (Ta) 3.7 (Ta) 1.9 (Ta)
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 175 -55 to 150
Package 8-SOIC 8-SOIC 8-SOIC 8-SO TO-263 (D2PAK) 8-SO
Product Status Discontinued Active Active Active Active Active
RoHS Status ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Preferred for Drop-In Replacement):

FDS4685 (onsemi PowerTrench®) is the primary recommended substitute. This part maintains 40V Vdss rating, exceeds the 6.2A requirement with 8.2A continuous drain current, and is packaged in 8-SOIC. The FDS4685 demonstrates superior electrical performance with 27mOhm Rds On (versus 41mOhm) and significantly lower gate charge (27nC versus 80nC), resulting in reduced switching losses. Product status is Active with full RoHS3 compliance and REACH Unaffected designation. Inventory availability is substantial at 18,536 pieces.

AO4443 (Alpha & Omega Semiconductor) provides a near-equivalent alternative with 40V Vdss and 6A continuous drain current in 8-SOIC packaging. Rds On specification is 42mOhm, closely matching the IRF7241PBF at 41mOhm. Gate charge is significantly lower at 22nC, improving switching efficiency. Product status is Active with full compliance certifications. Inventory is available at 15,300 pieces.

Tier 2 - Functional Alternatives (Application-Dependent):

DMP4050SSS-13 (Diodes Incorporated) meets the 40V Vdss requirement but provides reduced continuous drain current at 4.4A. This substitute is suitable only for applications where the 6.2A rating is not fully utilized. Rds On is 50mOhm, and gate charge is minimal at 13.9nC. Power dissipation is limited to 1.56W (Ta). Product status is Active with full compliance. Use only when current requirements can be verified as lower than the main part specification.

Tier 3 - Limited Compatibility (Package or Voltage Variation):

IRF9Z14SPBF (Vishay Siliconix) offers higher voltage rating (60V Vdss) and adequate current (6.7A) but uses TO-263 (D2PAK) packaging instead of 8-SOIC. This part is not suitable for direct PCB replacement without layout redesign. Rds On specification is significantly higher at 500mOhm, indicating reduced performance. Use only when higher voltage rating is required and package change is acceptable.

ZXMP3A16N8TA (Diodes Incorporated) has reduced voltage rating (30V Vdss), making it unsuitable for 40V applications. Although current rating (5.6A) is acceptable, the lower voltage specification creates functional incompatibility. This part is not recommended as a substitute for the IRF7241PBF.

Selection Criteria Summary:

  • For direct replacement: FDS4685 or AO4443
  • For current-limited applications: DMP4050SSS-13
  • For higher voltage requirements with package change: IRF9Z14SPBF
  • All recommended substitutes maintain RoHS3 compliance and REACH Unaffected status

Frequently Asked Questions (FAQ)

Q1: Can FDS4685 be used as a direct replacement for IRF7241PBF?

A: Yes. FDS4685 is a direct substitute meeting all critical electrical parameters. Both devices are P-Channel MOSFETs rated for 40V Vdss in 8-SOIC packaging. FDS4685 exceeds the 6.2A requirement with 8.2A continuous drain current and demonstrates superior performance with lower Rds On (27mOhm versus 41mOhm) and reduced gate charge (27nC versus 80nC). No circuit modifications are required.

Q2: What is the difference between 8-SOIC and 8-SO packaging?

A: 8-SOIC and 8-SO refer to the same package type: 8-pin Small Outline Integrated Circuit with 0.154" (3.90mm) width. These designations are interchangeable in industry documentation. All parts listed maintain this package specification for PCB compatibility.

Q3: Why does IRF9Z14SPBF have higher Rds On than the main part?

A: IRF9Z14SPBF uses TO-263 (D2PAK) packaging, which is a larger discrete package designed for higher power dissipation (43W at Tc). The higher Rds On (500mOhm) reflects the different die design optimized for the larger package format. This part is not recommended for direct replacement due to both package incompatibility and electrical performance degradation.

Q4: Is DMP4050SSS-13 suitable for all applications using IRF7241PBF?

A: No. DMP4050SSS-13 is rated for only 4.4A continuous drain current, compared to the IRF7241PBF specification of 6.2A. This substitute is suitable only for applications where actual drain current remains below 4.4A. Verify application current requirements before selecting this part. Power dissipation is also limited to 1.56W (Ta).

Q5: Do all substitute parts maintain the same operating temperature range?

A: Most substitutes maintain the -55°C to 150°C range. IRF9Z14SPBF extends to -55°C to 175°C, providing wider temperature capability. All parts listed are rated for the minimum -55°C to 150°C specification required by the IRF7241PBF.

Q6: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (FDS4685, AO4443, DMP4050SSS-13, IRF9Z14SPBF, and ZXMP3A16N8TA) are ROHS3 Compliant with REACH Unaffected status, matching the compliance profile of the IRF7241PBF.

Q7: Why is gate charge (Qg) important for substitution?

A: Gate charge determines switching speed and energy loss during gate transitions. Lower gate charge (measured in nanofarads) reduces switching losses and improves efficiency. FDS4685 (27nC) and AO4443 (22nC) provide significantly lower gate charge than IRF7241PBF (80nC), resulting in improved circuit performance. This is a secondary consideration after electrical ratings are verified.

Q8: Can ZXMP3A16N8TA replace IRF7241PBF in a 40V circuit?

A: No. ZXMP3A16N8TA is rated for only 30V Vdss, making it unsuitable for applications requiring 40V operation. Using this part in a 40V circuit creates functional incompatibility and risk of device failure. This part is not recommended as a substitute.

Q9: What inventory considerations apply to substitute selection?

A: FDS4685 has the highest inventory availability at 18,536 pieces, followed by AO4443 at 15,300 pieces and DMP4050SSS-13 at 15,165 pieces. The original IRF7241PBF has 1,350 pieces available but is discontinued. For long-term production support, FDS4685 or AO4443 are recommended due to Active product status and substantial inventory levels.

Q10: Are there electrical performance trade-offs when substituting?

A: FDS4685 and AO4443 provide equivalent or superior electrical performance compared to IRF7241PBF. FDS4685 offers lower Rds On and gate charge, improving efficiency. AO4443 matches Rds On closely while reducing gate charge. DMP4050SSS-13 trades current capacity for lower gate charge. IRF9Z14SPBF trades on-resistance performance for higher voltage rating and larger package. Select based on application requirements.

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