IRF7240PBF P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7240PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 10.5A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SO surface mount configuration. The IRF7240PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

The IRF7240PBF serves in applications requiring P-channel switching and linear regulation at moderate voltage and current levels. Discontinuation necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	10.5	A
Rds On (Max) @ Id, Vgs	15 mOhm @ 10.5A, 10V	—
Gate Charge (Qg) @ Vgs	110 nC @ 10V	—
Vgs (Max)	±20	V
Power Dissipation (Max)	2.5	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7240PBF are selected based on strict electrical and mechanical parameter matching within the following criteria:

Primary Substitution Parameters:

FET Type: P-Channel (mandatory)
Drain to Source Voltage (Vdss): 40V or higher (allows voltage derating)
Continuous Drain Current (Id): 10A or higher at 25°C (maintains current capability)
Rds On (Max): 15 mOhm or lower at rated conditions (ensures on-state performance)
Package / Case: 8-SOIC surface mount (mechanical compatibility)
Operating Temperature: -55°C minimum to 150°C minimum (thermal envelope)
RoHS3 Compliance: Required (regulatory alignment)

Substitution Groups:

Group 1: Direct Voltage & Current Match (40V, ≥10A)

AO4485 (40V, 10A, 15 mOhm, 8-SOP)
FDS4675 (40V, 11A, 13 mOhm, 8-SOIC)

Group 2: Voltage Derating Acceptable (30V, ≥11A)

FDS6675BZ (30V, 11A, 13 mOhm, 8-SOIC)

Group 3: Package Variant (Different mounting, higher voltage rating)

IRF9Z24SPBF (60V, 11A, TO-263 D2PAK, different package)

Group 4: Voltage Derating Required (20V, lower voltage rating)

FDS6375 (20V, 8A, 24 mOhm, 8-SOIC) — suitable only for applications with ≤20V bus voltage

Parameter Comparison

Parameter	IRF7240PBF	AO4485	FDS4675	FDS6675BZ	IRF9Z24SPBF	FDS6375
Manufacturer	Infineon	UMW	onsemi	onsemi	Vishay Siliconix	onsemi
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vdss (V)	40	40	40	30	60	20
Id @ 25°C (A)	10.5	10	11	11	11	8
Rds On (Max) (mOhm)	15 @ 10.5A, 10V	15 @ 10A, 10V	13 @ 11A, 10V	13 @ 11A, 10V	280 @ 6.6A, 10V	24 @ 8A, 4.5V
Gate Charge Qg (nC)	110 @ 10V	55 @ 10V	56 @ 4.5V	62 @ 10V	19 @ 10V	36 @ 4.5V
Vgs (Max) (V)	±20	±20	±20	±25	±20	±8
Power Dissipation (W)	2.5	1.7	2.4	2.5	3.7 (Ta), 60 (Tc)	2.5
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 150	-55 to 175	-55 to 175
Package	8-SOIC	8-SOP	8-SOIC	8-SOIC	TO-263 D2PAK	8-SOIC
Product Status	Discontinued	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

For Direct Replacement (40V Bus Voltage, ≥10A Current):

FDS4675 (onsemi) is the preferred substitute. It matches the IRF7240PBF in Vdss (40V), exceeds drain current specification (11A vs. 10.5A), provides superior on-state resistance (13 mOhm vs. 15 mOhm), and maintains 8-SOIC package compatibility. FDS4675 is active in production with full RoHS3 compliance and extended operating temperature range (-55°C to 175°C). Gate charge is lower (56 nC vs. 110 nC), reducing switching losses.

AO4485 (UMW) provides equivalent voltage and current ratings with matching Rds On (15 mOhm). However, it is packaged in 8-SOP rather than 8-SOIC, requiring PCB layout verification for pin compatibility. Power dissipation is lower (1.7W vs. 2.5W), indicating reduced thermal load. AO4485 is active with RoHS3 compliance.

For Voltage-Derated Applications (≤30V Bus Voltage, ≥11A Current):

FDS6675BZ (onsemi) operates at 30V Vdss with 11A continuous current and 13 mOhm on-state resistance. This part is suitable only when circuit design ensures maximum drain-source voltage does not exceed 30V. FDS6675BZ maintains 8-SOIC package compatibility and is active in production with RoHS3 compliance.

For Package-Variant Applications (Higher Voltage Tolerance, Thermal Management Priority):

IRF9Z24SPBF (Vishay Siliconix) provides 60V Vdss rating and TO-263 D2PAK packaging with superior thermal dissipation (60W at Tc vs. 2.5W at Ta). This part is suitable for applications requiring higher voltage margin or improved heat sinking. However, on-state resistance is significantly higher (280 mOhm @ 6.6A vs. 15 mOhm @ 10.5A), resulting in increased power dissipation at full current. Gate charge is substantially lower (19 nC), enabling faster switching. Package change requires PCB redesign.

For Voltage-Constrained Applications (≤20V Bus Voltage):

FDS6375 (onsemi) is limited to 20V Vdss and 8A continuous current. This part is suitable only for applications with maximum bus voltage of 20V and current requirements not exceeding 8A. On-state resistance is higher (24 mOhm @ 8A, 4.5V), and Vgs (Max) is limited to ±8V. Use only when circuit voltage constraints are confirmed.

Compliance & Availability:

All substitute parts maintain RoHS3 compliance and REACH unaffected status. FDS4675, FDS6675BZ, and FDS6375 are onsemi PowerTrench® series devices with active production status and high inventory availability (16,580, 50,100, and 80,299 units respectively). AO4485 (UMW) has 90,100 units in stock. IRF9Z24SPBF (Vishay) has lower inventory (1,389 units) and different packaging.

Frequently Asked Questions (FAQ)

Q1: Can AO4485 replace IRF7240PBF directly on the PCB?

AO4485 provides electrical equivalence (40V, 10A, 15 mOhm) but is packaged in 8-SOP rather than 8-SOIC. Pin pitch and lead configuration differ. PCB layout verification is required. If the PCB footprint is designed for 8-SOIC, AO4485 cannot be used without adapter or layout modification.

Q2: Is FDS4675 a drop-in replacement for IRF7240PBF?

FDS4675 is electrically superior (40V, 11A, 13 mOhm) and uses identical 8-SOIC packaging. It is a direct drop-in replacement. Lower gate charge (56 nC vs. 110 nC) may improve switching performance. No PCB modification is required.

Q3: Can FDS6675BZ be used in a 40V circuit?

FDS6675BZ is rated for 30V Vdss maximum. Using it in a 40V circuit exceeds its voltage rating and risks device failure. It is suitable only for applications with confirmed maximum bus voltage of 30V or lower.

Q4: Why is IRF9Z24SPBF listed as a substitute if it has much higher on-state resistance?

IRF9Z24SPBF provides voltage derating margin (60V vs. 40V) and superior thermal dissipation through TO-263 D2PAK packaging. It is listed as a substitute for applications where higher voltage tolerance or thermal management is prioritized over on-state efficiency. The significantly higher Rds On (280 mOhm) makes it unsuitable for high-current, low-loss applications.

Q5: What is the difference between 8-SOIC and 8-SOP packaging?

Both are 8-lead surface mount packages with 0.154" (3.90mm) width. However, pin pitch, lead length, and solder pad geometry differ. 8-SOIC has gull-wing leads with specific bend radius, while 8-SOP may have different lead geometry. PCB footprints are not interchangeable without verification.

Q6: Is FDS6375 suitable for the same applications as IRF7240PBF?

FDS6375 is limited to 20V Vdss and 8A continuous current, compared to IRF7240PBF's 40V and 10.5A. It is suitable only for applications with maximum bus voltage of 20V and current not exceeding 8A. Higher on-state resistance (24 mOhm) increases power dissipation. Use only when circuit voltage and current constraints are confirmed.

Q7: Which substitute has the lowest gate charge?

IRF9Z24SPBF has the lowest gate charge (19 nC @ 10V), enabling fastest switching transitions. However, its significantly higher on-state resistance (280 mOhm) makes it unsuitable for high-current applications. FDS4675 and FDS6675BZ have comparable gate charge (56 and 62 nC respectively) with superior on-state performance.

Q8: Are all substitutes RoHS3 compliant?

Yes. All listed substitute parts (AO4485, FDS4675, FDS6675BZ, IRF9Z24SPBF, FDS6375) are RoHS3 compliant and REACH unaffected, matching the IRF7240PBF compliance status.

Q9: What is the inventory status of substitute parts?

FDS4675 (16,580 units), FDS6675BZ (50,100 units), and FDS6375 (80,299 units) have high inventory availability. AO4485 has 90,100 units in stock. IRF9Z24SPBF has lower availability (1,389 units). Verify current stock with suppliers before design commitment.

Q10: Can I use multiple substitute parts interchangeably in the same design?

No. Each substitute has different electrical characteristics. FDS4675 is recommended for direct replacement. Other substitutes require circuit analysis to confirm compatibility with voltage, current, and thermal requirements. Mixing substitutes in the same design is not recommended without detailed verification.

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