IRF7220 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7220 is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 14V drain-to-source voltage with 11A continuous drain current at 25°C. This device is part of the HEXFET® series and is designed for surface mount applications in 8-SO packaging. The IRF7220 is classified as obsolete, making identification of active equivalent and substitute parts essential for ongoing design support and procurement continuity.

Substiute Parts

IRF7220

Infineon TechnologiesIn Stock: 2223IRF7220 Datasheet

Current PartRFQ

DMP2022LSS-13

Diodes IncorporatedIn Stock: 42540DMP2022LSS-13 Datasheet

MFR RecommendedRFQ

FDS6576

onsemiIn Stock: 28803FDS6576 Datasheet

MFR RecommendedRFQ

NTMS10P02R2G

onsemiIn Stock: 15468NTMS10P02R2G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF7220 is determined by the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel topology must be maintained
• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 14V
• Continuous Drain Current (Id): Substitute must support the application's current requirements
• On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
• Gate Threshold Voltage (Vgs(th)): Must be compatible with gate drive circuitry
• Operating Temperature Range: Must span -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package: 8-SOIC (0.154", 3.90mm Width) footprint compatibility

Regulatory Compliance:

• RoHS Status: Active substitutes should be RoHS3 compliant
• REACH Status: REACH Unaffected status maintained across all parts

The three substitute parts listed (DMP2022LSS-13, FDS6576, NTMS10P02R2G) meet these criteria with enhanced voltage ratings (20V Vdss) and active product status, providing superior design margin and long-term availability.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: FDS6576 (onsemi)

The FDS6576 provides the closest electrical match to the IRF7220. It maintains the 11A continuous drain current specification, offers equivalent on-resistance performance (14 mOhm vs. 12 mOhm), and provides a 20V Vdss rating that exceeds the original 14V specification. The device is active, RoHS3 compliant, and available in the identical 8-SOIC package. The PowerTrench® series technology ensures compatibility with existing gate drive circuits designed for the IRF7220.

Secondary Recommendation: DMP2022LSS-13 (Diodes Incorporated)

The DMP2022LSS-13 offers 10A continuous drain current with 13 mOhm on-resistance and 20V Vdss rating. This substitute is suitable for applications where the 11A specification can be reduced to 10A without performance degradation. The device is active, RoHS3 compliant, and packaged in 8-SOIC. Higher gate threshold voltage (1.1V) requires verification of gate drive circuit compatibility.

Tertiary Recommendation: NTMS10P02R2G (onsemi)

The NTMS10P02R2G provides 8.8A continuous drain current with 20V Vdss and 14 mOhm on-resistance. This substitute is applicable only to applications where drain current requirements do not exceed 8.8A. The reduced power dissipation rating (1.6W vs. 2.5W) indicates lower thermal capability. The device is active and RoHS3 compliant in 8-SOIC packaging.

Compliance Considerations:

All three substitute parts are RoHS3 compliant and REACH unaffected, addressing regulatory requirements that the obsolete IRF7220 does not meet. Selection should prioritize FDS6576 for applications requiring full current specification retention and thermal performance equivalence.

Frequently Asked Questions (FAQ)

Q1: Can the DMP2022LSS-13 be used as a direct replacement for the IRF7220?

The DMP2022LSS-13 is electrically compatible as a P-Channel MOSFET in 8-SOIC packaging with 20V Vdss and 2.5W power dissipation. However, the continuous drain current is rated at 10A versus the IRF7220's 11A. Substitution is valid only if the application current requirement does not exceed 10A. The higher gate threshold voltage (1.1V vs. 600 mV) requires confirmation that gate drive circuitry can reliably switch the device.

Q2: What is the primary advantage of FDS6576 over the IRF7220?

The FDS6576 maintains the 11A continuous drain current specification while providing a higher 20V Vdss rating, creating additional design margin for voltage transients. The device is active with RoHS3 compliance, ensuring long-term availability and regulatory compliance. On-resistance performance (14 mOhm) is comparable to the IRF7220 (12 mOhm), with lower gate charge (60 nC vs. 125 nC) reducing gate drive power requirements.

Q3: Is the NTMS10P02R2G suitable for high-current applications?

The NTMS10P02R2G is rated for 8.8A continuous drain current, which is lower than both the IRF7220 (11A) and FDS6576 (11A). This device is suitable only for applications where the maximum required drain current does not exceed 8.8A. The reduced power dissipation rating (1.6W vs. 2.5W) indicates lower thermal headroom and should be verified against application thermal requirements.

Q4: Are all substitute parts compatible with the IRF7220 PCB footprint?

Yes. All three substitute parts (DMP2022LSS-13, FDS6576, NTMS10P02R2G) are packaged in 8-SOIC (0.154", 3.90mm Width), which is identical to the IRF7220 package. PCB footprint compatibility is confirmed. No layout modifications are required for mechanical substitution.

Q5: What is the impact of higher gate threshold voltage in substitute parts?

The IRF7220 has a gate threshold voltage of 600 mV, while substitutes range from 1.1V to 1.5V. Higher threshold voltage requires greater gate drive voltage to achieve full on-state conduction. Gate drive circuits designed for the IRF7220 must be verified to supply sufficient voltage (typically 4.5V to 10V) to reliably switch substitute devices. Marginal gate drive circuits may experience slower switching or incomplete turn-on.

Q6: Which substitute part offers the best thermal performance?

The FDS6576 and DMP2022LSS-13 both offer 2.5W power dissipation, matching the IRF7220. The NTMS10P02R2G is limited to 1.6W, reducing thermal capability. For applications requiring maximum thermal performance, FDS6576 or DMP2022LSS-13 are preferred. On-resistance values (13-14 mOhm) are comparable across all substitutes, with thermal performance determined by power dissipation rating and PCB thermal design.

Q7: What regulatory compliance advantages do substitute parts provide?

All three substitute parts are RoHS3 compliant and REACH unaffected, whereas the IRF7220 is RoHS non-compliant. For applications subject to RoHS directives or customer requirements for RoHS compliance, substitution is mandatory. Active product status of all substitutes ensures compliance documentation and long-term supply chain support.