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IRF720LPBF Equivalent & Substitute Parts
Part Overview
The IRF720LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 3.3A continuous drain current. This device is packaged in TO-262-3 (I2PAK) configuration and is designed for through-hole mounting applications. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating.
Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the application's voltage, current, and thermal requirements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 400 | V |
| Continuous Drain Current (Id) @ 25°C | 3.3 | A (Tc) |
| On-State Resistance (Rds On Max) @ Id, Vgs | 1.8 | Ohm @ 2A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4 | V @ 250µA |
| Power Dissipation (Max) | 50 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package Type | TO-262-3 | — |
Substitute Part Grouping Explanation
Substitution of the IRF720LPBF is determined by equivalence in the following critical parameters:
Voltage Rating Equivalence: The substitute part must maintain a Drain to Source Voltage (Vdss) rating of 400V or greater to ensure safe operation in the same circuit topology.
Current Capability: The substitute part must support the required continuous drain current specification. Parts with equal or higher current ratings are acceptable.
On-State Resistance (Rds On): The substitute part must demonstrate equivalent or lower on-state resistance at the specified gate-source voltage (10V) to maintain comparable conduction losses and thermal performance.
Gate Threshold Voltage: The substitute part must operate within compatible gate threshold voltage ranges to ensure proper switching behavior with existing gate drive circuits.
Temperature Range: The substitute part must support the full operating temperature range of -55°C to 150°C (TJ).
Mounting and Package Compatibility: Through-hole mounting capability is required. Package type differences may be acceptable if the application permits physical layout modifications.
Compliance Status: Both the main part and substitute must maintain Active product status and RoHS3 compliance.
Parameter Comparison
| Parameter | IRF720LPBF (Main Part) | STP7NK40Z (Substitute) | Compatibility |
|---|---|---|---|
| Manufacturer | Vishay Siliconix | STMicroelectronics | Different manufacturers |
| FET Type | N-Channel | N-Channel | Equivalent |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent |
| Drain to Source Voltage (Vdss) | 400 V | 400 V | Equivalent |
| Continuous Drain Current (Id) @ 25°C | 3.3 A (Tc) | 5.4 A (Tc) | Substitute exceeds requirement |
| On-State Resistance (Rds On Max) @ Id, Vgs | 1.8 Ohm @ 2A, 10V | 1 Ohm @ 2.7A, 10V | Substitute has lower resistance |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4 V @ 250µA | 4.5 V @ 50µA | Compatible range |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 26 nC @ 10 V | Substitute requires slightly higher gate charge |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V | 535 pF @ 25 V | Substitute has higher capacitance |
| Maximum Gate Voltage (Vgs Max) | ±20 V | ±30 V | Substitute has wider gate voltage range |
| Power Dissipation (Max) | 50 W (Tc) | 70 W (Tc) | Substitute has higher thermal capability |
| Operating Temperature Range | -55 to 150 °C (TJ) | -55 to 150 °C (TJ) | Equivalent |
| Mounting Type | Through Hole | Through Hole | Equivalent |
| Package Type | TO-262-3 | TO-220-3 | Different package; physical layout change required |
| Product Status | Active | Active | Equivalent |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Equivalent |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | Equivalent |
Engineering Selection Recommendations
Electrical Compatibility: The STP7NK40Z substitute part meets all critical electrical requirements for the IRF720LPBF application. Both devices operate at 400V Vdss rating, support the required drain current, and maintain compatible gate threshold voltage characteristics. The substitute part provides superior on-state resistance (1 Ohm versus 1.8 Ohm), resulting in lower conduction losses and reduced thermal dissipation.
Thermal Performance: The STP7NK40Z offers increased power dissipation capability (70W versus 50W at Tc), providing additional thermal margin in the application.
Compliance and Status: Both parts maintain Active product status and RoHS3 compliance, ensuring regulatory alignment and long-term availability.
Package Consideration: The primary difference between these parts is the package type. The IRF720LPBF uses TO-262-3 (I2PAK) packaging, while the STP7NK40Z uses TO-220-3 packaging. This difference requires physical layout modification and PCB redesign. The TO-220 package has different pin spacing and mounting hole locations compared to TO-262-3. Applications must accommodate this package change through appropriate PCB layout adjustments and mechanical mounting provisions.
Gate Drive Compatibility: The substitute part exhibits slightly higher gate charge (26 nC versus 20 nC) and input capacitance (535 pF versus 410 pF). Gate drive circuits must supply adequate current to charge these capacitances within the required switching time. Existing gate drive designs should be evaluated for compatibility with these increased capacitive loads.
Frequently Asked Questions (FAQ)
Q: Can the STP7NK40Z directly replace the IRF720LPBF without circuit modifications?
A: Electrical substitution is valid; however, physical layout modifications are required due to package differences. The TO-220-3 package has different pin spacing and mounting configuration compared to TO-262-3. PCB redesign and mechanical mounting changes are necessary.
Q: What are the key electrical advantages of the STP7NK40Z substitute?
A: The STP7NK40Z provides lower on-state resistance (1 Ohm versus 1.8 Ohm), higher continuous drain current capability (5.4A versus 3.3A), and greater power dissipation rating (70W versus 50W). These characteristics result in reduced conduction losses and improved thermal performance.
Q: Are there any gate drive circuit considerations when using the STP7NK40Z?
A: The substitute part has higher gate charge (26 nC versus 20 nC) and input capacitance (535 pF versus 410 pF). Gate drive circuits must supply sufficient current to charge these capacitances. Existing gate drive designs should be evaluated to confirm adequate drive capability.
Q: Do both parts meet the same compliance and regulatory requirements?
A: Yes. Both the IRF720LPBF and STP7NK40Z are RoHS3 compliant, maintain Active product status, and operate across the identical temperature range (-55°C to 150°C TJ). Both parts carry MSL 1 (Unlimited) moisture sensitivity rating.
Q: What is the primary reason to consider the STP7NK40Z as a substitute?
A: The STP7NK40Z is suitable when improved thermal performance, lower conduction losses, or higher current capability are beneficial to the application. The substitute part's superior on-state resistance and power dissipation rating provide design margin advantages. Package compatibility must be confirmed for the specific application.
Q: Are there inventory or lead time advantages to using the STP7NK40Z?
A: Inventory levels are provided for reference only and do not constitute a substitution criterion. Part selection should be based on electrical compatibility, compliance status, and application requirements.
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