IRF7205PBF P-Channel MOSFET 30V 4.6A Equivalent & Substitute Parts

Part Overview

The IRF7205PBF is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 4.6A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SOIC surface mount configuration. The IRF7205PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and surface mount packaging. The following parts provide functional equivalence within specified parameter tolerances.

Substiute Parts

IRF7205PBF
Infineon TechnologiesIn Stock: 1547IRF7205PBF Datasheet
IRF7205PBF
Current Part
FDS9435A
onsemiIn Stock: 89130FDS9435A Datasheet
FDS9435A
Direct
DMP3098LSS-13
Diodes IncorporatedIn Stock: 238769DMP3098LSS-13 Datasheet
DMP3098LSS-13
MFR Recommended
IRFR9014PBF
Vishay SiliconixIn Stock: 389225IRFR9014PBF Datasheet
IRFR9014PBF
MFR Recommended
STS5P3LLH6
STMicroelectronicsIn Stock: 18733STS5P3LLH6 Datasheet
STS5P3LLH6
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.6 A (Ta)
Rds On (Max) @ Id, Vgs 70 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 3 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10V
Power Dissipation (Max) 2.5 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)

Substitute Part Grouping Explanation

Substitution logic for the IRF7205PBF is based on the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-source voltage (Vdss) must equal or exceed 30V
  • Continuous drain current (Id) must meet or exceed 4.6A at 25°C
  • On-resistance (Rds On) must not significantly exceed 70mOhm at rated conditions
  • Gate threshold voltage (Vgs(th)) must be compatible with 3V specification
  • Power dissipation capability must support 2.5W minimum

Mechanical Compatibility Criteria:

  • Surface mount packaging required
  • 8-pin SOIC package footprint (0.154", 3.90mm width) or equivalent
  • Pin configuration must support P-Channel MOSFET topology

Environmental Compliance:

  • RoHS3 compliance required
  • Operating temperature range must support -55°C to 150°C minimum

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary electrical specifications within tolerance) and Functional Alternatives (meeting electrical requirements with package or performance variations).

Parameter Comparison

Parameter IRF7205PBF FDS9435A DMP3098LSS-13 IRFR9014PBF STS5P3LLH6
Manufacturer Infineon onsemi Diodes Inc. Vishay Siliconix STMicroelectronics
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Vdss (V) 30 30 30 60 30
Id @ 25°C (A) 4.6 (Ta) 5.3 (Ta) 5.3 (Ta) 5.1 (Tc) 5.0 (Ta)
Rds On (Max) @ Vgs (mOhm) 70 @ 10V 50 @ 10V 65 @ 10V 500 @ 10V 56 @ 10V
Vgs(th) (Max) @ 250µA (V) 3 3 2.1 4 2.5
Gate Charge (Qg) @ 10V (nC) 40 14 7.8 12 6
Power Dissipation (Max) (W) 2.5 (Tc) 2.5 (Ta) 2.5 (Ta) 2.5 (Ta) / 25 (Tc) 2.7 (Ta)
Operating Temp Range (°C) -55 to 150 -55 to 175 -55 to 150 -55 to 150 -55 to 150
Package / Case 8-SOIC 8-SOIC 8-SOIC TO-252-3 DPAK 8-SOIC
Product Status Discontinued Active Active Active Active
RoHS3 Compliance Yes Yes Yes Yes Yes

Engineering Selection Recommendations

FDS9435A (onsemi PowerTrench®)

The FDS9435A is a direct electrical equivalent with superior performance characteristics. It maintains the 30V Vdss rating and exceeds the 4.6A continuous drain current requirement at 5.3A. The on-resistance is reduced to 50mOhm, providing improved thermal performance. The 8-SOIC package matches the IRF7205PBF footprint exactly. Product status is active with full manufacturing support. RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) ensure long-term availability and reliability. This part is recommended as the primary substitute for direct replacement applications.

DMP3098LSS-13 (Diodes Incorporated)

The DMP3098LSS-13 provides electrical equivalence with 30V Vdss and 5.3A continuous drain current. On-resistance is 65mOhm, slightly higher than the IRF7205PBF but within acceptable tolerance for most applications. Gate charge is significantly reduced at 7.8nC, improving switching efficiency. The 8-SOIC package is mechanically compatible. Product status is active with extensive inventory availability (238,693 pcs). RoHS3 compliance and MSL 1 rating support procurement continuity. This part is suitable for applications where reduced gate charge provides system-level benefits.

STS5P3LLH6 (STMicroelectronics STripFET™ H6)

The STS5P3LLH6 maintains 30V Vdss rating with 5A continuous drain current. On-resistance is 56mOhm at 2.5A, 10V, providing improved efficiency. Gate charge is minimal at 6nC, supporting high-frequency switching applications. The 8-SOIC package is footprint-compatible. Product status is active. RoHS3 compliance and MSL 1 rating ensure supply chain stability. This part is recommended for applications requiring optimized switching performance and reduced power dissipation.

IRFR9014PBF (Vishay Siliconix)

The IRFR9014PBF differs significantly in package format (TO-252-3 DPAK) and electrical characteristics. While it maintains P-Channel topology and 5.1A continuous drain current capability, the Vdss rating is elevated to 60V, and on-resistance is substantially higher at 500mOhm. The DPAK package provides superior thermal dissipation (25W Tc rating) but requires PCB layout modification. This part is not recommended as a direct substitute due to package incompatibility and significantly degraded on-resistance performance. It is suitable only for applications where the DPAK thermal advantage justifies redesign effort.

Frequently Asked Questions (FAQ)

Q: Can the FDS9435A directly replace the IRF7205PBF without PCB modification?

A: Yes. The FDS9435A is pin-compatible in the 8-SOIC package and maintains identical electrical specifications for Vdss (30V) and exceeds drain current requirements (5.3A vs. 4.6A). No PCB layout changes are required.

Q: What is the significance of the reduced gate charge in DMP3098LSS-13 and STS5P3LLH6?

A: Lower gate charge (Qg) reduces the charge required to switch the FET on and off, resulting in lower gate drive power consumption and potentially faster switching transitions. This is beneficial in high-frequency applications but does not affect DC operating characteristics.

Q: Why is IRFR9014PBF listed as a substitute if the package is different?

A: The IRFR9014PBF is included as a functional alternative for applications where thermal performance is critical. The TO-252-3 DPAK package provides significantly higher power dissipation capability (25W Tc vs. 2.5W). However, this part requires PCB redesign and is not recommended for direct pin-for-pin replacement.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (FDS9435A, DMP3098LSS-13, IRFR9014PBF, and STS5P3LLH6) are RoHS3 compliant with MSL 1 (unlimited) moisture sensitivity level, ensuring compliance with environmental regulations and long-term storage capability.

Q: What is the maximum operating temperature difference between the IRF7205PBF and substitute parts?

A: The IRF7205PBF and DMP3098LSS-13, IRFR9014PBF, and STS5P3LLH6 all support -55°C to 150°C operating range. The FDS9435A extends the upper limit to 175°C, providing additional thermal margin in high-temperature environments.

Q: Which substitute part offers the best on-resistance performance?

A: The STS5P3LLH6 provides the lowest on-resistance at 56mOhm (measured at 2.5A, 10V). The FDS9435A offers 50mOhm at 5.3A, 10V. Both represent improvements over the IRF7205PBF specification of 70mOhm, reducing conduction losses and heat generation.

Q: Can substitute parts be used in existing designs without electrical simulation or testing?

A: Electrical equivalence is established through parameter matching. However, system-level validation is recommended for applications with tight thermal budgets, high-frequency switching requirements, or critical reliability specifications. Parameter differences in gate charge and input capacitance may affect gate drive circuit performance.

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