IRF7201TRPBF N-Channel 30V 7.3A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF7201TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 7.3A continuous drain current at 25°C. This device is part of the HEXFET® series and is housed in an 8-SOIC surface mount package. The IRF7201TRPBF is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package form factors to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7.3	A (Tc)
Rds On (Max) @ Id, Vgs	30	mOhm @ 7.3A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	550	pF @ 25V
Power Dissipation (Max)	2.5	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRF7201TRPBF are selected based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Voltage Rating Compatibility: All substitute parts maintain the 30V Vdss rating, ensuring safe operation in circuits designed for the original component.

Current Handling: Substitute parts must support continuous drain current at or above 7.3A to maintain equivalent current-carrying capacity. Parts with higher current ratings (such as STS10N3LH5 at 10A) provide enhanced margin and are acceptable substitutes.

On-Resistance (Rds On): The maximum on-resistance specification at rated conditions determines power dissipation and thermal performance. Substitute parts with equal or lower Rds On values maintain or improve efficiency characteristics.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with comparable or lower values ensure compatible gate drive circuit operation.

Package and Mounting: All substitute parts use the 8-SOIC surface mount package with identical 0.154" (3.90mm) width, enabling direct PCB layout compatibility.

Thermal and Compliance Ratings: Operating temperature range (-55°C to 150°C) and RoHS3 compliance are maintained across all substitutes to ensure regulatory and environmental compatibility.

Parameter Comparison

Parameter	IRF7201TRPBF	IRF7201TRPBFXTMA1	DMN3024LSS-13	STS10N3LH5	ZXMN3B04N8TA
Manufacturer	Infineon	Infineon	Diodes Inc.	STMicroelectronics	Diodes Inc.
Product Status	Obsolete	Active	Active	Not For New Designs	Active
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	7.3 (Tc)	7.3 (Tc)	6.4 (Ta)	10 (Tc)	7.2 (Ta)
Rds On (Max) (mOhm)	30 @ 7.3A, 10V	30 @ 7.3A, 10V	24 @ 7A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V
Vgs(th) (Max) (V)	1 @ 250µA	1 @ 250µA	3 @ 250µA	1 @ 250µA	0.7 @ 250µA (Min)
Gate Charge Qg (Max) (nC)	28 @ 10V	28 @ 10V	12.9 @ 10V	4.6 @ 5V	23.1 @ 4.5V
Ciss (Max) (pF)	550 @ 25V	550 @ 25V	608 @ 15V	475 @ 25V	2480 @ 15V
Power Dissipation (Max) (W)	2.5 (Tc)	2.5 (Tc)	1.6 (Ta)	2.5 (Tc)	2 (Ta)
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: IRF7201TRPBFXTMA1

The IRF7201TRPBFXTMA1 is the manufacturer-recommended substitute from Infineon Technologies. This part maintains identical electrical specifications to the obsolete IRF7201TRPBF, including 30V Vdss, 7.3A continuous drain current, 30mOhm Rds On, and 2.5W power dissipation. The primary difference is product status: IRF7201TRPBFXTMA1 is active and available in production quantities (668 pcs in stock). Packaging differs only in tape & reel format (PG-DSO-8-902) versus the original bulk packaging, with no impact on electrical or mechanical compatibility. This part is suitable for direct replacement in all applications.

Secondary Substitute: STS10N3LH5

The STS10N3LH5 from STMicroelectronics provides enhanced current handling at 10A continuous drain current, exceeding the original 7.3A specification. On-resistance is lower at 21mOhm, improving efficiency. Gate charge is significantly reduced at 4.6nC, enabling faster switching. Input capacitance is lower at 475pF. The device maintains 30V Vdss, 2.5W power dissipation, and full operating temperature range compatibility. Product status is "Not For New Designs," indicating limited long-term availability. This substitute is suitable for applications where improved thermal performance and switching speed are beneficial.

Tertiary Substitute: DMN3024LSS-13

The DMN3024LSS-13 from Diodes Incorporated maintains 30V Vdss and 8-SOIC package compatibility. Continuous drain current is 6.4A, slightly below the original 7.3A specification. On-resistance is improved at 24mOhm. Gate charge is significantly lower at 12.9nC. Power dissipation is reduced to 1.6W. Product status is active with 3139 pcs in stock. This substitute is suitable for applications where current requirements do not exceed 6.4A and where reduced power dissipation is advantageous.

Alternative Substitute: ZXMN3B04N8TA

The ZXMN3B04N8TA from Diodes Incorporated maintains 30V Vdss and 8-SOIC package compatibility. Continuous drain current is 7.2A, matching the original specification. On-resistance is 25mOhm at 4.5V gate drive. Gate charge is 23.1nC. Input capacitance is significantly higher at 2480pF, which may affect gate drive circuit design. Product status is active with 6871 pcs in stock. This substitute is suitable for applications where gate drive voltage is limited to 4.5V or lower.

Frequently Asked Questions (FAQ)

Q: Can IRF7201TRPBFXTMA1 be used as a direct replacement for IRF7201TRPBF?

A: Yes. IRF7201TRPBFXTMA1 is the manufacturer-recommended active substitute with identical electrical specifications. The only difference is packaging format (tape & reel versus bulk). Both use the 8-SOIC package with identical pin configuration and mechanical dimensions.

Q: What is the key difference between IRF7201TRPBF and STS10N3LH5?

A: STS10N3LH5 has higher continuous drain current (10A vs. 7.3A), lower on-resistance (21mOhm vs. 30mOhm), and significantly lower gate charge (4.6nC vs. 28nC). These differences result in improved thermal performance and faster switching. Both maintain 30V Vdss and 8-SOIC packaging.

Q: Is DMN3024LSS-13 suitable for all applications using IRF7201TRPBF?

A: DMN3024LSS-13 is suitable for applications where continuous drain current does not exceed 6.4A. If the original design requires 7.3A continuous current, DMN3024LSS-13 may not provide adequate margin. Verify application current requirements before substitution.

Q: Why does ZXMN3B04N8TA have much higher input capacitance?

A: ZXMN3B04N8TA input capacitance is 2480pF at 15V, compared to 550pF for IRF7201TRPBF. This higher capacitance may require gate drive circuit adjustment to maintain switching speed. Verify gate drive capability before substitution.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IRF7201TRPBFXTMA1, DMN3024LSS-13, STS10N3LH5, ZXMN3B04N8TA) are RoHS3 compliant and suitable for applications with RoHS requirements.

Q: What is the difference between product status "Obsolete," "Active," and "Not For New Designs"?

A: Obsolete parts are no longer manufactured or supported. Active parts are in current production with ongoing availability. "Not For New Designs" indicates the part is still available but not recommended for new circuit designs due to planned discontinuation. For long-term production, select active status parts.

Q: Can I use STS10N3LH5 in a design originally specified for IRF7201TRPBF?

A: Yes, with verification. STS10N3LH5 has superior electrical characteristics (higher current, lower on-resistance, lower gate charge). Verify that the gate drive circuit can accommodate the lower gate charge requirement and that thermal design does not require the higher power dissipation margin of the original part.

Q: Do all substitute parts use the same 8-SOIC package?

A: Yes. All substitute parts use the 8-SOIC package with 0.154" (3.90mm) width, enabling direct PCB layout compatibility without redesign.

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