IRF7201PBF N-Channel MOSFET 30V 7.3A Equivalent & Substitute Parts

Part Overview

The IRF7201PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 7.3A continuous drain current at 25°C. This device is part of the HEXFET® series and is packaged in an 8-SOIC surface mount configuration. The IRF7201PBF is currently discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	7.3	A
Rds On (Max) @ Id, Vgs	30 mOhm @ 7.3A, 10V	mOhm
Gate Charge (Qg) @ Vgs	28	nC @ 10V
Power Dissipation (Max)	2.5	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-SOIC	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitute parts for the IRF7201PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id): 7.3A or greater at 25°C
Package Type: 8-SOIC surface mount configuration
Operating Temperature Range: -55°C to 150°C
Gate Voltage Rating (Vgs): ±20V or greater

Secondary Compatibility Parameters:

On-state resistance (Rds On): Lower or equal values preferred
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Adequate thermal handling capability

Substitutes are grouped into two categories: direct pin-compatible replacements in 8-SOIC packaging, and functional equivalents that may require board-level layout adjustments due to different package types.

Parameter Comparison

Parameter	IRF7201PBF	DMN3024LSS-13	IRFR010PBF	STS10N3LH5	ZXMN3B04N8TA
Manufacturer	Infineon	Diodes Inc.	Vishay	STMicroelectronics	Diodes Inc.
Vdss (V)	30	30	50	30	30
Id @ 25°C (A)	7.3	6.4	8.2	10	7.2
Rds On (mOhm)	30 @ 7.3A, 10V	24 @ 7A, 10V	200 @ 4.6A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V
Qg (nC)	28 @ 10V	12.9 @ 10V	10 @ 10V	4.6 @ 5V	23.1 @ 4.5V
Power Dissipation (W)	2.5 (Tc)	1.6 (Ta)	25 (Tc)	2.5 (Tc)	2 (Ta)
Package	8-SOIC	8-SOIC	DPAK	8-SOIC	8-SOIC
Vgs (Max) (V)	±20	±20	±20	±22	±12
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Product Status	Discontinued	Active	Active	Not For New Designs	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Tier 1 - Direct Pin-Compatible Replacements (8-SOIC Package):

DMN3024LSS-13 (Diodes Incorporated) is the primary substitute for the IRF7201PBF. This device maintains the 30V Vdss rating and 8-SOIC package footprint. The DMN3024LSS-13 delivers 6.4A continuous drain current, which is within acceptable range for most applications designed for the 7.3A IRF7201PBF. The on-state resistance of 24 mOhm at 7A, 10V is superior to the IRF7201PBF specification. The device is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). Inventory availability is 3139 pieces.

STS10N3LH5 (STMicroelectronics) provides enhanced performance with 10A continuous drain current at 25°C, exceeding the IRF7201PBF rating. This STripFET™ V series device maintains 30V Vdss and 8-SOIC packaging. The on-state resistance of 21 mOhm at 5A, 10V is superior, and gate charge is significantly reduced at 4.6 nC. However, this device is marked as "Not For New Designs," limiting its suitability for long-term production applications. Inventory is 15265 pieces.

ZXMN3B04N8TA (Diodes Incorporated) is an active alternative with 7.2A continuous drain current, closely matching the IRF7201PBF rating. The 8-SOIC package provides direct pin compatibility. On-state resistance of 25 mOhm at 7.2A, 4.5V is comparable. Gate voltage rating is limited to ±12V, which is lower than the IRF7201PBF ±20V specification. This device is currently in active production with ROHS3 compliance. Inventory is 6871 pieces.

Tier 2 - Functional Equivalent (Different Package):

IRFR010PBF (Vishay Siliconix) is a functional substitute with higher voltage rating (50V Vdss) and superior power dissipation capability (25W). The 8.2A continuous drain current exceeds the IRF7201PBF requirement. However, this device uses DPAK (TO-252-3) packaging instead of 8-SOIC, requiring board-level redesign. The on-state resistance of 200 mOhm at 4.6A, 10V is significantly higher, making it suitable only for applications where voltage headroom is critical and on-state losses are not a primary concern. The device is in active production status with high inventory availability (15933 pieces).

Compliance and Certification Status:

All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the IRF7201PBF environmental certifications. All devices operate across the -55°C to 150°C temperature range. Moisture sensitivity level is MSL 1 (unlimited) for all substitutes, ensuring equivalent handling and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can the DMN3024LSS-13 directly replace the IRF7201PBF without board modifications?

A: Yes. The DMN3024LSS-13 is pin-compatible with the IRF7201PBF, both using 8-SOIC packaging with identical pinout. No board-level modifications are required. The 6.4A rating is lower than the IRF7201PBF 7.3A specification, so verify that your application does not require the full 7.3A continuous current.

Q: Why is the STS10N3LH5 marked "Not For New Designs"?

A: The "Not For New Designs" status indicates that STMicroelectronics is not recommending this device for new product development. While the device remains available and functional, long-term availability and support cannot be guaranteed. For new designs, select DMN3024LSS-13 or ZXMN3B04N8TA instead.

Q: What is the impact of using IRFR010PBF instead of IRF7201PBF?

A: The IRFR010PBF uses DPAK packaging instead of 8-SOIC, requiring PCB layout changes. The 50V Vdss rating provides additional voltage margin but is not required for 30V applications. The 200 mOhm on-state resistance is significantly higher, increasing power dissipation and heat generation. Use this substitute only when voltage headroom is critical and thermal management is adequate.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (DMN3024LSS-13, IRFR010PBF, STS10N3LH5, ZXMN3B04N8TA) are ROHS3 compliant and REACH unaffected, matching the IRF7201PBF environmental certifications.

Q: What is the difference between Tc and Ta temperature measurements?

A: Tc (case temperature) and Ta (ambient temperature) are different measurement references for power dissipation ratings. Tc measurements are taken at the device case, while Ta measurements are taken at ambient air temperature. Both measurement methods are valid; compare power dissipation values using the same reference when evaluating thermal performance.

Q: Can ZXMN3B04N8TA be used in circuits requiring ±20V gate voltage?

A: No. The ZXMN3B04N8TA has a maximum gate voltage rating of ±12V, which is lower than the IRF7201PBF ±20V specification. If your circuit applies gate voltages exceeding ±12V, this device will not be suitable. Use DMN3024LSS-13 or STS10N3LH5 instead, both rated for ±20V or higher.

Q: Which substitute offers the best on-state resistance performance?

A: The STS10N3LH5 provides the lowest on-state resistance at 21 mOhm (measured at 5A, 10V), followed by DMN3024LSS-13 at 24 mOhm (at 7A, 10V). Lower on-state resistance reduces power dissipation and heat generation during operation.

Q: What inventory levels are available for each substitute?

A: DMN3024LSS-13: 3139 pieces; IRFR010PBF: 15933 pieces; STS10N3LH5: 15265 pieces; ZXMN3B04N8TA: 6871 pieces. Verify current availability with your supplier before finalizing procurement decisions.

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