IRF7201 N-Channel MOSFET 30V 7.3A Equivalent & Substitute Parts

Part Overview

The IRF7201 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 7.3A continuous drain current. This device is part of the HEXFET® series and is housed in an 8-SO surface mount package. The IRF7201 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support.

Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and gate charge specifications, while accommodating the 8-SOIC package form factor.

Key Parameters

Parameter	IRF7201 Value	Unit	Specification Basis
Drain-to-Source Voltage (Vdss)	30	V	Maximum rated voltage
Continuous Drain Current (Id) @ 25°C	7.3	A	Tc measurement condition
On-Resistance (Rds On) @ Id, Vgs	30 mOhm @ 7.3A, 10V	mOhm	Maximum specification
Gate Threshold Voltage (Vgs(th)) @ Id	1	V @ 250µA	Maximum specification
Gate Charge (Qg) @ Vgs	28	nC @ 10V	Maximum specification
Power Dissipation (Max)	2.5	W (Tc)	Thermal specification
Operating Temperature Range	-55 to 150	°C (TJ)	Junction temperature
Package Type	8-SOIC	-	0.154" width, 3.90mm
Mounting Type	Surface Mount	-	SMD configuration

Substitute Part Grouping Explanation

Substitution eligibility is determined by strict adherence to the following electrical and mechanical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Package Type: Must be 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount required
Operating Temperature Range: Must span -55°C to 150°C (TJ)
FET Type: N-Channel MOSFET technology

Secondary Compatibility Criteria:

Continuous Drain Current (Id): Minimum 7.3A at 25°C
On-Resistance (Rds On): Maximum 30 mOhm at rated conditions
Gate Charge (Qg): Electrical switching characteristic
Gate Threshold Voltage (Vgs(th)): Drive voltage compatibility

All four substitute parts meet the primary compatibility criteria. Variations in secondary parameters reflect different measurement conditions (Ta vs. Tc) and manufacturer specifications but remain within acceptable substitution ranges for the 30V, 7.3A application class.

Parameter Comparison

Parameter	IRF7201 (Infineon)	DMN3024LSS-13 (Diodes)	NTMS7N03R2G (onsemi)	STS10N3LH5 (STMicro)	ZXMN3B04N8TA (Diodes)	Unit
Vdss	30	30	30	30	30	V
Id @ 25°C	7.3 (Tc)	6.4 (Ta)	4.8 (Ta)	10 (Tc)	7.2 (Ta)	A
Rds On (Max)	30 @ 7.3A, 10V	24 @ 7A, 10V	23 @ 7A, 10V	21 @ 5A, 10V	25 @ 7.2A, 4.5V	mOhm
Vgs(th) (Max)	1 @ 250µA	3 @ 250µA	3 @ 250µA	1 @ 250µA	0.7 @ 250µA	V
Qg (Max)	28 @ 10V	12.9 @ 10V	43 @ 10V	4.6 @ 5V	23.1 @ 4.5V	nC
Power Dissipation (Max)	2.5 (Tc)	1.6 (Ta)	0.8 (Ta)	2.5 (Tc)	2 (Ta)	W
Operating Temp Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC	8-SOIC	-
Product Status	Obsolete	Active	Active	Not For New Designs	Active	-
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

Primary Recommendation: DMN3024LSS-13 (Diodes Incorporated)

The DMN3024LSS-13 is classified as Active product status with ROHS3 compliance. This part provides the closest electrical match to the IRF7201 with 30V Vdss rating and 6.4A continuous drain current. The on-resistance of 24 mOhm at 7A, 10V is superior to the IRF7201 specification. Packaging is identical 8-SOIC form factor. This substitute is suitable for new designs requiring RoHS compliance and long-term supply availability.

Secondary Recommendation: ZXMN3B04N8TA (Diodes Incorporated)

The ZXMN3B04N8TA is Active status with ROHS3 compliance and provides 7.2A continuous drain current, closely matching the IRF7201 current rating. On-resistance is 25 mOhm at 7.2A, 4.5V. Gate threshold voltage is 700 mV minimum, providing superior drive characteristics. This part is suitable for applications requiring current capability matching the original specification.

Tertiary Recommendation: STS10N3LH5 (STMicroelectronics)

The STS10N3LH5 is classified as Not For New Designs but offers the highest continuous drain current at 10A (Tc) with superior on-resistance of 21 mOhm at 5A, 10V. ROHS3 compliant. This part is suitable for legacy system maintenance where supply exists but not recommended for new design implementations.

Not Recommended for Primary Selection: NTMS7N03R2G (onsemi)

The NTMS7N03R2G has reduced continuous drain current of 4.8A (Ta), which falls below the IRF7201 specification of 7.3A. While ROHS3 compliant and Active status, this part is suitable only for applications with lower current requirements than the original design.

Frequently Asked Questions (FAQ)

Q: Can the DMN3024LSS-13 directly replace the IRF7201 in existing designs?

A: Yes. Both parts share identical 30V Vdss rating, 8-SOIC package configuration, and -55°C to 150°C operating temperature range. The DMN3024LSS-13 provides superior on-resistance (24 mOhm vs. 30 mOhm) and is ROHS3 compliant. Pin-to-pin compatibility is maintained in the 8-SOIC package.

Q: What is the difference between Tc and Ta measurement conditions for drain current?

A: Tc (case temperature) and Ta (ambient temperature) represent different thermal measurement conditions. Tc typically yields higher current ratings as it measures at the device case rather than ambient air. Both conditions are valid; application thermal design determines which specification applies.

Q: Why is the NTMS7N03R2G listed as a substitute if it has lower current rating?

A: The NTMS7N03R2G meets the primary compatibility criteria (30V Vdss, 8-SOIC package, operating temperature range) but is suitable only for applications with current requirements below 4.8A. It is not recommended as a direct replacement for the full 7.3A specification.

Q: Are all substitute parts RoHS compliant?

A: The IRF7201 is RoHS non-compliant. All four substitute parts (DMN3024LSS-13, NTMS7N03R2G, STS10N3LH5, ZXMN3B04N8TA) are ROHS3 compliant, making them suitable for applications requiring environmental compliance.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and driver circuit requirements. Lower Qg values (STS10N3LH5 at 4.6 nC) require less driver current and enable faster switching. Higher Qg values (NTMS7N03R2G at 43 nC) require more robust driver circuits. All listed parts are compatible with standard gate driver circuits designed for 30V MOSFETs.

Q: Can I use STS10N3LH5 in new designs despite "Not For New Designs" status?

A: STS10N3LH5 is classified as Not For New Designs by STMicroelectronics, indicating the manufacturer is not recommending this part for new applications. For new designs, select DMN3024LSS-13 or ZXMN3B04N8TA, both with Active status. STS10N3LH5 is suitable for legacy system maintenance where existing inventory exists.

Q: What packaging options are available for these substitutes?

A: All substitute parts are available in 8-SOIC surface mount package (0.154" width, 3.90mm). DMN3024LSS-13 is supplied in Tape & Reel (TR) packaging. NTMS7N03R2G packaging is not specified. STS10N3LH5 is available in Cut Tape (CT) & Digi-Reel®. ZXMN3B04N8TA is supplied in Cut Tape (CT). Verify packaging availability with your supplier for production requirements.

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