IRF710S N-Channel MOSFET 400V 2A Equivalent & Substitute Parts

Part Overview

The IRF710S is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 400V drain-to-source voltage with 2A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is designed for high-voltage switching applications requiring moderate current handling in a compact form factor.

The IRF710S is classified as an obsolete product. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and production requirements for legacy systems and equipment utilizing this component. Active alternatives with identical electrical and mechanical specifications are available to ensure design continuity.

Substiute Parts

IRF710S
Vishay SiliconixIn Stock: 2297IRF710S Datasheet
IRF710S
Current Part
IRF710SPBF
Vishay SiliconixIn Stock: 3235IRF710SPBF Datasheet
IRF710SPBF
Direct

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 2 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25V
Power Dissipation (Max) 3.1 (Ta), 36 (Tc) W
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRF710S is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameters (Must Match Exactly):

  • Drain to Source Voltage (Vdss): 400V
  • Continuous Drain Current (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On): 10V
  • On-State Resistance (Rds On): 3.6 Ohm @ 1.2A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Gate Charge (Qg): 17 nC @ 10V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Input Capacitance (Ciss): 170 pF @ 25V
  • Power Dissipation: 3.1W (Ta), 36W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters (Must Match Exactly):

  • Mounting Type: Surface Mount
  • Package: TO-263 (D2PAK)
  • Package Designation: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Compliance Parameters:

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

The IRF710SPBF meets all specified criteria and is qualified as a direct substitute for the IRF710S.

Parameter Comparison

Parameter IRF710S IRF710SPBF Match
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 2 A (Tc) 2 A (Tc)
Drive Voltage (Max Rds On) 10 V 10 V
Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.2A, 10V 3.6 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10V 17 nC @ 10V
Vgs (Max) ±20 V ±20 V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25V 170 pF @ 25V
Power Dissipation (Max) 3.1 W (Ta), 36 W (Tc) 3.1 W (Ta), 36 W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

IRF710SPBF is the qualified direct substitute for IRF710S applications.

Product Status Consideration: The IRF710S is classified as obsolete. The IRF710SPBF is an active product manufactured by Vishay Siliconix, ensuring ongoing availability and supply chain continuity for new production and field replacement requirements.

Compliance Status: The IRF710SPBF is RoHS3 compliant, whereas the IRF710S is RoHS non-compliant. This distinction is significant for applications subject to RoHS regulations. The IRF710SPBF meets current environmental and regulatory standards applicable to electronic components in the European Union and equivalent jurisdictions.

Electrical and Mechanical Equivalence: All electrical parameters, including voltage ratings, current ratings, on-state resistance, gate charge, and thermal characteristics, are identical between the IRF710S and IRF710SPBF. The mechanical package specification (TO-263 D2PAK) is identical, ensuring direct pin-compatible replacement without PCB redesign.

Packaging and Handling: The IRF710SPBF is supplied in tube packaging, whereas the IRF710S packaging format is not specified in the provided data. Both devices maintain MSL 1 (Unlimited) moisture sensitivity classification, indicating no special moisture control requirements during storage or handling.

Supply Availability: The IRF710SPBF has 3174 pieces in current inventory as new original stock, compared to 2200 pieces for the obsolete IRF710S. Selection of the IRF710SPBF ensures access to active production inventory and long-term supply security.

Frequently Asked Questions (FAQ)

Q: Can the IRF710SPBF be used as a direct replacement for the IRF710S in existing designs?

A: Yes. The IRF710SPBF is electrically and mechanically equivalent to the IRF710S. All electrical parameters, including voltage ratings, current ratings, on-state resistance, and thermal characteristics, are identical. The TO-263 D2PAK package is pin-compatible, requiring no PCB modifications.

Q: What is the primary difference between the IRF710S and IRF710SPBF?

A: The IRF710S is an obsolete product with RoHS non-compliant status. The IRF710SPBF is an active product that is RoHS3 compliant. Both devices are manufactured by Vishay Siliconix and share identical electrical and mechanical specifications.

Q: Are there any thermal performance differences between these parts?

A: No. Both the IRF710S and IRF710SPBF have identical power dissipation ratings of 3.1W (Ta) and 36W (Tc), and both operate across the same temperature range of -55°C to 150°C (TJ).

Q: Does the IRF710SPBF require different gate drive voltage than the IRF710S?

A: No. Both devices require identical drive voltage of 10V for maximum on-state resistance specification and have the same gate threshold voltage of 4V @ 250µA.

Q: What is the significance of the MSL 1 (Unlimited) rating for both parts?

A: MSL 1 (Unlimited) indicates that these devices have unlimited shelf life and do not require special moisture control measures during storage or handling. Standard component storage conditions are sufficient.

Q: Is the IRF710SPBF suitable for high-voltage switching applications?

A: Yes. The IRF710SPBF is rated for 400V drain-to-source voltage and is designed for high-voltage switching applications. The 2A continuous drain current and 3.6 Ohm on-state resistance support moderate-current switching circuits.

Q: Can the IRF710SPBF be used in applications originally designed for the IRF710S without circuit modifications?

A: Yes. The IRF710SPBF is a direct electrical and mechanical equivalent. No circuit modifications, gate drive adjustments, or thermal management changes are required.

Q: What packaging format is the IRF710SPBF supplied in?

A: The IRF710SPBF is supplied in tube packaging. This is standard for active production components and is compatible with automated assembly processes.

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