IRF710 MOSFET N-Channel 400V 2A Equivalent & Substitute Parts

Part Overview

The IRF710 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 400V drain-to-source voltage with 2A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220AB configuration and dissipates a maximum of 36W. The IRF710 is classified as an obsolete product, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain identical electrical performance and mechanical compatibility to ensure direct replacement capability without circuit redesign.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	400	V
Current - Continuous Drain (Id) @ 25°C	2	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	3.6	Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	170	pF @ 25V
Power Dissipation (Max)	36	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Supplier Device Package	TO-220AB	—

Substitute Part Grouping Explanation

Substitution of the IRF710 is determined by strict equivalence across all electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameters (Must Match Exactly):

Drain to Source Voltage (Vdss): 400V
Continuous Drain Current (Id) @ 25°C: 2A (Tc)
On-State Drain Resistance (Rds On) @ 1.2A, 10V: 3.6 Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA: 4V
Gate Charge (Qg) @ 10V: 17 nC
Maximum Gate Voltage (Vgs): ±20V
Input Capacitance (Ciss) @ 25V: 170 pF
Power Dissipation (Max): 36W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters (Must Match Exactly):

Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

Technology Parameter (Must Match Exactly):

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

The IRF710PBF is identified as a direct substitute based on complete parameter equivalence and identical package configuration.

Parameter Comparison

Parameter	IRF710	IRF710PBF	Match
FET Type	N-Channel	N-Channel	✓
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	✓
Drain to Source Voltage (Vdss)	400 V	400 V	✓
Current - Continuous Drain (Id) @ 25°C	2 A (Tc)	2 A (Tc)	✓
Drive Voltage (Max Rds On)	10 V	10 V	✓
Rds On (Max) @ Id, Vgs	3.6 Ohm @ 1.2A, 10V	3.6 Ohm @ 1.2A, 10V	✓
Vgs(th) (Max) @ Id	4 V @ 250µA	4 V @ 250µA	✓
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10V	17 nC @ 10V	✓
Vgs (Max)	±20 V	±20 V	✓
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25V	170 pF @ 25V	✓
Power Dissipation (Max)	36 W (Tc)	36 W (Tc)	✓
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-220-3	TO-220-3	✓
Supplier Device Package	TO-220AB	TO-220AB	✓

Engineering Selection Recommendations

The IRF710 is classified as an obsolete product. The IRF710PBF is the direct equivalent substitute and is classified as an active product with current manufacturing status.

Compliance Considerations:

The IRF710 is RoHS non-compliant. The IRF710PBF is ROHS3 compliant. Both parts maintain identical REACH status (REACH Unaffected) and ECCN classification (EAR99).

For applications subject to RoHS regulatory requirements, the IRF710PBF is the appropriate selection. For legacy systems or applications without RoHS compliance mandates, either part satisfies the electrical and mechanical specifications.

Both parts are manufactured by Vishay Siliconix and share the same base product number (IRF710), confirming design equivalence.

Frequently Asked Questions (FAQ)

Q: Can the IRF710PBF be used as a direct replacement for the IRF710?

A: Yes. The IRF710PBF is electrically and mechanically identical to the IRF710. All electrical parameters, including Vdss, Id, Rds On, gate charge, and operating temperature range, are equivalent. Both parts use the TO-220AB package configuration. Direct substitution is supported without circuit modification.

Q: What is the primary difference between the IRF710 and IRF710PBF?

A: The IRF710PBF is an active product with current manufacturing status, while the IRF710 is obsolete. The IRF710PBF is ROHS3 compliant, whereas the IRF710 is RoHS non-compliant. Electrical and mechanical specifications are identical.

Q: Are there packaging differences between these parts?

A: Both parts are supplied in the TO-220AB package configuration. The IRF710 is supplied in standard packaging, while the IRF710PBF is supplied in Tube packaging. The physical device package (TO-220-3) and pin configuration are identical, ensuring mechanical compatibility in PCB layouts and through-hole mounting applications.

Q: What parameters must remain constant for substitution?

A: Substitution requires equivalence in Drain to Source Voltage (400V), Continuous Drain Current (2A @ 25°C), On-State Drain Resistance (3.6 Ohm @ 1.2A, 10V), Gate Threshold Voltage (4V @ 250µA), Gate Charge (17 nC @ 10V), Maximum Gate Voltage (±20V), Input Capacitance (170 pF @ 25V), Power Dissipation (36W), Operating Temperature Range (-55°C to 150°C), and package configuration (TO-220AB). All parameters must match exactly.

Q: Is the IRF710PBF suitable for new designs?

A: Yes. The IRF710PBF is an active product with current manufacturing availability. It is the recommended selection for new designs requiring an N-Channel 400V 2A MOSFET in TO-220AB packaging. ROHS3 compliance supports regulatory requirements in most jurisdictions.

Q: What is the inventory status of these parts?

A: The IRF710 has 16,075 pieces in stock (new original). The IRF710PBF has 19,400 pieces in stock (new original). Both parts are available for immediate procurement.

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