IRF6811STRPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6811STRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 19A continuous drain current at 25°C ambient temperature. This device features the DIRECTFET™ SQ surface mount package and belongs to the HEXFET® series. The IRF6811STRPBF is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing production support and design continuity.

Substiute Parts

IRF6811STRPBF

Infineon TechnologiesIn Stock: 20496IRF6811STRPBF Datasheet

Current PartRFQ

AON7534

Alpha & Omega Semiconductor Inc.In Stock: 250307AON7534 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF6811STRPBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must be equal to or greater than 25V
• Continuous Drain Current (Id) must meet or exceed 19A at 25°C ambient temperature
• On-Resistance (Rds On) characteristics must support equivalent power dissipation performance
• Gate drive voltage compatibility (4.5V to 10V range)
• Operating temperature range must encompass -40°C to 150°C

Mechanical Compatibility Criteria:

• Surface mount package configuration
• Pin count and footprint compatibility with DIRECTFET™ SQ or equivalent power package
• Moisture sensitivity level MSL 1 (Unlimited)

Regulatory Compliance:

• RoHS3 compliance required
• REACH unaffected status

The AON7534 from Alpha & Omega Semiconductor Inc. meets these substitution criteria with a 30V Vdss rating, 20A continuous drain current at 25°C, and compatible surface mount 8-DFN-EP packaging.

Parameter Comparison

Engineering Selection Recommendations

Substitution Feasibility:

The AON7534 qualifies as a functional substitute for the IRF6811STRPBF based on the following factors:

1. Voltage Rating: The AON7534 provides 30V Vdss, which exceeds the 25V requirement of the IRF6811STRPBF, ensuring compatibility in applications operating at or below 25V.

2. Current Rating: The AON7534 delivers 20A continuous drain current at 25°C ambient temperature, meeting the 19A specification of the main part.

3. On-Resistance Performance: While the AON7534 exhibits 5.0 mOhm Rds On compared to the IRF6811STRPBF's 3.7 mOhm, both devices operate within acceptable power dissipation ranges for their respective thermal environments.

4. Gate Drive Compatibility: Both devices support 4.5V to 10V gate drive voltage ranges, ensuring compatibility with existing gate driver circuits.

5. Temperature Range: The AON7534 extends the lower operating temperature to -55°C, providing enhanced performance margin beyond the IRF6811STRPBF's -40°C minimum.

6. Regulatory Compliance: Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements.

7. Package Consideration: The AON7534 uses an 8-DFN-EP (3x3) package, which differs from the DIRECTFET™ SQ package of the main part. PCB layout and thermal management design modifications are required.

Product Status Context:

The IRF6811STRPBF is classified as obsolete, while the AON7534 is designated as "Not For New Designs." Both devices have limited availability for new production. The AON7534 currently maintains higher inventory levels (250,200 pieces) compared to the IRF6811STRPBF (20,400 pieces), providing better near-term supply continuity.

Frequently Asked Questions (FAQ)

Q1: Can the AON7534 directly replace the IRF6811STRPBF without circuit modifications?

A: The AON7534 provides electrical compatibility in terms of voltage, current, and gate drive requirements. However, the package change from DIRECTFET™ SQ to 8-DFN-EP (3x3) requires PCB layout redesign. Thermal management characteristics differ between packages and must be re-evaluated for your specific application.

Q2: What are the key electrical differences between these two devices?

A: The primary differences are: (1) Vdss rating increases from 25V to 30V; (2) Rds On increases from 3.7 mOhm to 5.0 mOhm at rated current; (3) Gate charge increases from 17 nC to 22 nC; (4) Input capacitance decreases from 1590 pF to 1037 pF. These differences affect switching speed, power dissipation, and thermal performance.

Q3: Are there thermal management considerations when substituting these parts?

A: Yes. The IRF6811STRPBF achieves 32W power dissipation at case temperature, while the AON7534 achieves 23W. The different package geometries (DIRECTFET™ SQ versus 8-DFN-EP) have different thermal resistance characteristics. Thermal analysis specific to your PCB design and cooling strategy is required.

Q4: Do both devices meet the same regulatory and compliance standards?

A: Both the IRF6811STRPBF and AON7534 are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. Regulatory compliance is equivalent between the two devices.

Q5: What is the significance of the product status designations?

A: The IRF6811STRPBF is classified as obsolete, indicating end-of-life status with no new production. The AON7534 is designated "Not For New Designs," indicating limited availability and potential future discontinuation. Both statuses indicate these are legacy components; long-term design strategies should evaluate newer alternatives from current product lines.

Q6: How do gate charge differences affect circuit performance?

A: The AON7534 exhibits 22 nC gate charge compared to 17 nC for the IRF6811STRPBF. Higher gate charge requires longer switching times and increased gate driver current capability. Verify that your gate driver circuit can supply the required charge within acceptable switching frequency and timing constraints.

Q7: Is the higher Vdss rating of the AON7534 a disadvantage?

A: No. A higher Vdss rating (30V versus 25V) provides design margin and does not negatively impact performance in applications operating at 25V or below. The higher rating ensures the device remains within safe operating limits with additional voltage headroom.