IRF6810STRPBF Equivalent & Substitute Parts

Part Overview

The IRF6810STRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 16A continuous drain current at 25°C (50A at case temperature). This device features the DirectFET™ Isometric S1 surface mount package and is part of the HEXFET® series. The IRF6810STRPBF is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IRF6810STRPBF

Infineon TechnologiesIn Stock: 5556IRF6810STRPBF Datasheet

Current PartRFQ

IRLR3636TRPBF

Infineon TechnologiesIn Stock: 6343IRLR3636TRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF6810STRPBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) rating must equal or exceed the original specification (25V minimum)
• Continuous drain current capability must support the application requirements
• On-resistance (Rds On) characteristics must be compatible with circuit performance
• Gate threshold voltage and gate charge must fall within acceptable operating ranges
• Maximum operating temperature must accommodate the thermal environment

Mechanical Compatibility Criteria:

• Package type and pinout configuration must be compatible with the PCB layout
• Surface mount mounting type must match the assembly process

The IRLR3636TRPBF is identified as a manufacturer-recommended substitute. While this device features a different package type (TO-252AA DPAK versus DirectFET™ Isometric S1), it maintains N-Channel MOSFET technology and shares the same drive voltage specifications (4.5V, 10V). The IRLR3636TRPBF exceeds the voltage and current ratings of the IRF6810STRPBF, providing design margin for applications requiring higher performance headroom.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IRF6810STRPBF is classified as obsolete. The IRLR3636TRPBF is an active product from the same manufacturer (Infineon Technologies), ensuring ongoing availability and manufacturing support.

Compliance and Certifications: Both devices are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 (unlimited moisture sensitivity). Both are classified under ECCN EAR99 and HTSUS 8541.29.0095, maintaining regulatory consistency.

Electrical Performance: The IRLR3636TRPBF provides higher voltage rating (60V versus 25V) and equivalent current capability at case temperature (50A). The substitute device offers greater design margin for voltage transients and overvoltage conditions. Gate charge is higher (49 nC versus 11 nC), which affects switching speed and gate drive requirements.

Package Consideration: The IRLR3636TRPBF uses TO-252AA (DPAK) packaging instead of DirectFET™ Isometric S1. PCB layout modification is required for substitution. The DPAK package is widely supported in manufacturing environments and offers established thermal management characteristics.

Thermal Performance: The IRLR3636TRPBF supports significantly higher power dissipation (143W at case temperature versus 20W), enabling operation in higher-power applications or with reduced thermal management requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRLR3636TRPBF directly replace the IRF6810STRPBF without PCB modification?

A: No. The IRLR3636TRPBF uses TO-252AA (DPAK) packaging, while the IRF6810STRPBF uses DirectFET™ Isometric S1 packaging. These packages have different pinout configurations and footprints, requiring PCB layout redesign.

Q: What are the key electrical differences between these devices?

A: The IRLR3636TRPBF has a higher Vdss rating (60V versus 25V), higher gate charge (49 nC versus 11 nC), and significantly higher power dissipation capability (143W versus 20W at case temperature). Both devices share identical drive voltage specifications (4.5V, 10V).

Q: Is the IRLR3636TRPBF suitable for applications designed for the IRF6810STRPBF?

A: The IRLR3636TRPBF is electrically compatible for applications operating at or below 25V, as it exceeds the original voltage rating. Circuit performance depends on gate drive capability, as the higher gate charge requires more drive current. Thermal design must account for the different package characteristics.

Q: Why is the gate charge significantly higher on the IRLR3636TRPBF?

A: Gate charge is proportional to die size and input capacitance. The IRLR3636TRPBF has higher input capacitance (3779 pF versus 1038 pF), resulting in higher gate charge (49 nC versus 11 nC). This reflects the larger die area required to support higher current and power dissipation ratings.

Q: Are both devices compliant with current environmental regulations?

A: Yes. Both the IRF6810STRPBF and IRLR3636TRPBF are ROHS3 compliant, REACH unaffected, and carry MSL Level 1 classification, meeting current environmental and regulatory requirements.

Q: What is the impact of package change on thermal management?

A: The TO-252AA (DPAK) package of the IRLR3636TRPBF has established thermal characteristics and is widely supported by thermal management solutions. The DirectFET™ Isometric S1 package of the IRF6810STRPBF offers different thermal pathways. Thermal analysis specific to the application circuit is required to ensure adequate heat dissipation with the substitute device.

Q: Can the IRLR3636TRPBF be used in applications requiring the exact 25V rating of the IRF6810STRPBF?

A: Yes. The IRLR3636TRPBF is rated for 60V, which exceeds the 25V requirement. Applications operating at 25V or below are within the safe operating area of the substitute device. The higher voltage rating provides additional margin against transient overvoltages.