IRF6721STR1PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6721STR1PBF is an N-Channel 30V MOSFET manufactured by Infineon Technologies, featuring a DIRECTFET™ SQ surface mount package. This device is rated for 14A continuous drain current (Ta) with a maximum Rds(on) of 7.3mOhm at 10V gate drive. The product status is Obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IRF6721STR1PBF

Infineon TechnologiesIn Stock: 751IRF6721STR1PBF Datasheet

Current PartRFQ

PSMN7R0-30YL,115

Nexperia USA Inc.In Stock: 3623PSMN7R0-30YL,115 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF6721STR1PBF is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal 30V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Gate Voltage Range: Must support ±20V maximum
• Rds(on) Performance: Must not exceed 7.3mOhm at 10V Vgs to maintain electrical equivalence
• Mounting Type: Surface Mount required

Functional Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Must be within 2.4V specification range
• Gate Charge (Qg): Must not significantly exceed 17nC to preserve gate drive circuit compatibility
• Input Capacitance (Ciss): Must remain within acceptable range for switching performance

The PSMN7R0-30YL,115 manufactured by Nexperia USA Inc. meets these substitution criteria with matching Vdss (30V), N-Channel configuration, and superior Rds(on) performance (7mOhm @ 10V), while maintaining surface mount compatibility through the LFPAK56 package.

Parameter Comparison

Engineering Selection Recommendations

Electrical Compatibility: The PSMN7R0-30YL,115 provides electrical substitution for the IRF6721STR1PBF based on matching Vdss (30V), identical FET type (N-Channel), and equivalent Rds(on) performance (7mOhm vs. 7.3mOhm). The substitute device demonstrates superior continuous drain current capability (76A Tc vs. 60A Tc) and extended operating temperature range (-55 to 175°C vs. -40 to 150°C).

Package Consideration: The substitute part uses LFPAK56 (Power-SO8) packaging instead of the original DirectFET™ Isometric SQ package. PCB layout modifications are required to accommodate the different footprint and thermal characteristics.

Compliance Status: The PSMN7R0-30YL,115 carries ROHS3 compliance certification, whereas the IRF6721STR1PBF compliance status is not specified. Both devices maintain REACH Unaffected status and MSL Level 1 (Unlimited) moisture sensitivity rating.

Product Status Impact: Both the main part (Obsolete) and substitute part (Not For New Designs) carry limited product status designations. For new design implementations, evaluation of actively supported alternatives is recommended based on application requirements.

Frequently Asked Questions (FAQ)

Q: Can the PSMN7R0-30YL,115 directly replace the IRF6721STR1PBF without circuit modification?

A: Electrical substitution is valid based on matching Vdss (30V), FET type (N-Channel), and Rds(on) specifications. However, package differences (LFPAK56 vs. DirectFET™ SQ) require PCB layout redesign. Gate charge differences (22nC vs. 17nC) may require gate drive circuit evaluation for switching frequency applications.

Q: What are the key electrical parameters that determine substitution eligibility?

A: Substitution is determined by: Drain to Source Voltage (Vdss) = 30V, N-Channel configuration, MOSFET technology, Rds(on) ≤ 7.3mOhm @ 10V Vgs, and ±20V gate voltage rating. These parameters ensure functional equivalence in circuit operation.

Q: How do the thermal characteristics compare between these devices?

A: The PSMN7R0-30YL,115 supports higher power dissipation (51W Tc vs. 42W Tc) and operates across a wider temperature range (-55 to 175°C vs. -40 to 150°C). The LFPAK56 package provides different thermal coupling characteristics than the DirectFET™ SQ package; thermal interface design must be evaluated for specific applications.

Q: Are there compliance or regulatory differences between the main part and substitute?

A: The PSMN7R0-30YL,115 carries ROHS3 compliance certification. Both devices maintain REACH Unaffected status and identical MSL Level 1 ratings. Compliance requirements for the target application must be verified against the substitute part's certifications.

Q: What impact does the gate charge difference (22nC vs. 17nC) have on circuit design?

A: Gate charge affects gate drive circuit design, particularly in high-frequency switching applications. The 5nC increase in the substitute part may require gate driver output current evaluation to maintain switching speed and efficiency. Circuit simulation or testing is necessary for frequency-dependent applications.

Q: Is the PSMN7R0-30YL,115 suitable for new product designs?

A: The PSMN7R0-30YL,115 carries "Not For New Designs" status. For new product development, actively supported N-Channel 30V MOSFET alternatives should be evaluated to ensure long-term component availability and manufacturer support.