IRF6713STRPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6713STRPBF is an N-Channel 25V MOSFET manufactured by Infineon Technologies, featuring a DIRECTFET™ SQ surface mount package. This device is rated for 22A continuous drain current at 25°C (Ta) and 95A at case temperature (Tc), with a maximum on-resistance of 3mOhm at 22A and 10V gate-source voltage. The product is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRF6713STRPBF

Infineon TechnologiesIn Stock: 28642IRF6713STRPBF Datasheet

Current PartRFQ

DMTH6004LPS-13

Diodes IncorporatedIn Stock: 36561DMTH6004LPS-13 Datasheet

MFR RecommendedRFQ

NVTFS4C05NTAG

onsemiIn Stock: 15888NVTFS4C05NTAG Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF6713STRPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• N-Channel MOSFET technology with surface mount configuration
• Continuous drain current rating of 22A minimum at 25°C ambient temperature
• Gate-source voltage compatibility (±20V maximum)
• Drain-source voltage rating equal to or greater than 25V
• On-resistance performance within acceptable operating margins
• Moisture sensitivity level of 1 (Unlimited) or equivalent
• Operating temperature range supporting -40°C to 150°C minimum

Substitute Parts Identified:

1. DMTH6004LPS-13 (Diodes Incorporated): Meets all primary criteria with 60V Vdss rating, 22A continuous drain current, and superior thermal performance. Active product status ensures long-term availability.

2. NVTFS4C05NTAG (onsemi): Meets all primary criteria with 30V Vdss rating, 22A continuous drain current, and automotive-grade qualification. Active product status with AEC-Q101 certification.

Parameter Comparison

Engineering Selection Recommendations

DMTH6004LPS-13 Selection Criteria: This substitute is suitable for applications where higher voltage headroom is beneficial. The 60V Vdss rating provides margin above the 25V requirement of the original IRF6713STRPBF. The device maintains 22A continuous drain current specification and delivers superior thermal performance with 138W maximum power dissipation at case temperature. Active product status ensures ongoing availability and manufacturing support. ROHS3 compliance and unlimited moisture sensitivity level align with the original part specifications.

NVTFS4C05NTAG Selection Criteria: This substitute is suitable for applications requiring automotive-grade qualification and extended temperature operation. The 30V Vdss rating provides minimal voltage margin above the 25V requirement. The device maintains 22A continuous drain current specification and offers automotive-grade AEC-Q101 certification. Active product status ensures long-term supply chain stability. ROHS3 compliance and unlimited moisture sensitivity level align with the original part specifications. The extended operating temperature range (-55°C to 175°C) exceeds the original specification.

Package Compatibility Consideration: The IRF6713STRPBF uses DirectFET™ Isometric SQ packaging. Substitute parts employ different surface mount packages (PowerDI5060-8 and 8-PowerWDFN respectively). PCB layout modifications are required for physical and electrical integration.

Frequently Asked Questions (FAQ)

Q: Can DMTH6004LPS-13 directly replace IRF6713STRPBF without circuit modification?

A: Electrical substitution is valid based on continuous drain current (22A), gate-source voltage (±20V), and drain-source voltage (25V minimum requirement met by 60V rating). However, package differences (DirectFET™ SQ versus PowerDI5060-8) require PCB layout redesign. Gate charge difference (32nC versus 96.3nC) may affect gate drive circuit timing.

Q: What is the significance of the higher Vdss rating in DMTH6004LPS-13?

A: The 60V Vdss rating provides voltage margin above the 25V operating requirement. This does not degrade performance in 25V applications but increases component cost and may increase parasitic capacitance. Selection depends on circuit voltage stress margins and cost constraints.

Q: Is NVTFS4C05NTAG suitable for non-automotive applications?

A: Yes. Automotive-grade qualification (AEC-Q101) indicates enhanced reliability testing and manufacturing controls. These devices function in non-automotive applications. The automotive qualification does not restrict use in other markets.

Q: How do package differences affect substitution feasibility?

A: Package differences require PCB layout redesign, including trace routing, thermal via placement, and component footprint modifications. Electrical performance is independent of package type when thermal management is equivalent. Mechanical integration must be validated for each application.

Q: What is the impact of gate charge differences on circuit performance?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. IRF6713STRPBF: 32nC @ 4.5V; DMTH6004LPS-13: 96.3nC @ 10V; NVTFS4C05NTAG: 31nC @ 10V. Higher gate charge requires increased gate drive current or extended switching time. NVTFS4C05NTAG provides closest gate charge match to the original part.

Q: Are there thermal performance differences between substitutes?

A: Yes. Maximum power dissipation at case temperature: IRF6713STRPBF 42W; DMTH6004LPS-13 138W; NVTFS4C05NTAG 68W. DMTH6004LPS-13 offers superior thermal performance. Thermal design requirements depend on application duty cycle and heat dissipation capability.

Q: Do all substitute parts meet REACH and RoHS compliance?

A: DMTH6004LPS-13 and NVTFS4C05NTAG are ROHS3 compliant. All three parts (original and substitutes) have REACH Unaffected status. Compliance documentation should be verified with manufacturers for specific procurement requirements.