IRF6711STR1PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6711STR1PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 25V drain-to-source voltage with 19A continuous drain current (Ta) and 84A (Tc). This device features the DirectFET™ SQ surface mount package and is part of the HEXFET® series. The part is currently listed as obsolete, making identification of equivalent and substitute components essential for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain identical electrical characteristics and mechanical compatibility to ensure direct replacement without circuit redesign.

Substiute Parts

IRF6711STR1PBF

Infineon TechnologiesIn Stock: 926IRF6711STR1PBF Datasheet

Current PartRFQ

IRF6711STRPBF

International RectifierIn Stock: 6288IRF6711STRPBF Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF6711STR1PBF are identified based on strict parametric equivalence across all critical electrical and mechanical specifications. The substitution logic is based on the following key parameters that must match exactly:

Electrical Parameters (Must Match):

• Drain to Source Voltage (Vdss): 25V
• Continuous Drain Current: 19A (Ta), 84A (Tc)
• On-State Drain Resistance (Rds On): 3.8mOhm @ 19A, 10V
• Gate Threshold Voltage (Vgs(th)): 2.35V @ 25µA
• Gate Charge (Qg): 20nC @ 4.5V
• Input Capacitance (Ciss): 1810pF @ 13V
• Maximum Gate Voltage (Vgs): ±20V
• Power Dissipation: 2.2W (Ta), 42W (Tc)
• Operating Temperature Range: -40°C to 150°C

Mechanical Parameters (Must Match):

• Package Type: DirectFET™ Isometric SQ
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: 1 (Unlimited)

The IRF6711STRPBF qualifies as a parametric equivalent based on complete alignment with all specified electrical and mechanical parameters. This part maintains identical performance characteristics and package compatibility, enabling direct substitution in applications requiring the IRF6711STR1PBF.

Parameter Comparison

Engineering Selection Recommendations

The IRF6711STRPBF is a direct parametric equivalent to the obsolete IRF6711STR1PBF. Selection of the substitute part is based on the following engineering criteria:

Product Status Consideration: The IRF6711STR1PBF is obsolete, while the IRF6711STRPBF maintains active product status. This status difference ensures ongoing availability, supply chain continuity, and manufacturer support for the substitute part.

Compliance and Certification: The IRF6711STRPBF is ROHS3 compliant, meeting current environmental and regulatory requirements. Both parts maintain REACH Unaffected status, confirming compliance with chemical substance regulations. The substitute part satisfies modern procurement and environmental standards applicable to electronic components.

Electrical and Mechanical Equivalence: All critical electrical parameters are identical between the main part and substitute, including voltage rating, current capacity, on-state resistance, gate characteristics, and thermal performance. The DirectFET™ Isometric SQ package and surface mount configuration are identical, ensuring mechanical compatibility with existing PCB layouts and assembly processes.

Inventory and Supply: The IRF6711STRPBF is available in higher inventory quantities (6230 pieces) compared to the main part (863 pieces), supporting production requirements and reducing supply chain risk.

The IRF6711STRPBF is suitable for direct replacement in all applications where the IRF6711STR1PBF was originally specified.

Frequently Asked Questions (FAQ)

Q: Can the IRF6711STRPBF be used as a direct replacement for the IRF6711STR1PBF?

A: Yes. The IRF6711STRPBF is a parametric equivalent with identical electrical specifications (25V Vdss, 19A/84A continuous drain current, 3.8mOhm Rds On, 2.35V Vgs(th), 20nC gate charge, 1810pF input capacitance) and identical mechanical package (DirectFET™ Isometric SQ surface mount). Direct substitution is supported without circuit modification.

Q: What is the difference between the IRF6711STR1PBF and IRF6711STRPBF part numbers?

A: The primary difference is manufacturer designation and product status. The IRF6711STR1PBF is manufactured by Infineon Technologies and is obsolete. The IRF6711STRPBF is manufactured by International Rectifier and maintains active product status. The electrical and mechanical specifications are identical.

Q: Are there any packaging differences between these parts?

A: No. Both parts use the DirectFET™ Isometric SQ surface mount package with identical pin configuration, footprint, and mounting requirements. PCB layouts and assembly processes require no modification.

Q: What is the moisture sensitivity level for these parts?

A: Both parts have Moisture Sensitivity Level (MSL) 1 with unlimited shelf life, indicating the lowest moisture sensitivity classification. Standard handling and storage procedures apply.

Q: Is the IRF6711STRPBF RoHS compliant?

A: Yes. The IRF6711STRPBF is ROHS3 compliant, meeting current environmental regulations. Both parts maintain REACH Unaffected status.

Q: What is the operating temperature range for these MOSFETs?

A: Both parts operate across -40°C to 150°C junction temperature range, supporting applications in industrial, automotive, and consumer environments.

Q: Are there any gate drive voltage differences?

A: No. Both parts have identical gate specifications: maximum gate voltage of ±20V, gate threshold voltage of 2.35V @ 25µA, and gate charge of 20nC @ 4.5V. Gate drive circuits require no modification.

Q: What is the on-state resistance specification?

A: Both parts specify 3.8mOhm maximum on-state drain resistance (Rds On) measured at 19A drain current and 10V gate-source voltage. This specification ensures identical power dissipation and thermal performance in switching applications.