IRF6678 Equivalent & Substitute Parts Reference

Part Overview

The IRF6678 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 30A continuous drain current (Ta) and 150A (Tc). This device features the DIRECTFET™ MX surface mount package and is part of the HEXFET® series. The IRF6678 is classified as obsolete, making identification of suitable substitute components essential for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	30	A
Continuous Drain Current @ 25°C (Tc)	150	A
RDS(on) Max @ 30A, 10V	2.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.25	V
Gate Charge (Qg) @ 4.5V	65	nC
Input Capacitance (Ciss) @ 15V	5640	pF
Power Dissipation (Ta)	2.8	W
Power Dissipation (Tc)	89	W
Operating Temperature Range	-40 to 150	°C
Mounting Type	Surface Mount	—
Package	DIRECTFET™ MX	—
RoHS Status	Non-compliant	—
MSL Rating	3 (168 Hours)	—

Substitute Part Grouping Explanation

Substitution of the IRF6678 is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The primary substitute identified is the PSMN2R0-30YL,115 manufactured by Nexperia USA Inc.

Substitution Criteria:

The PSMN2R0-30YL,115 qualifies as a substitute based on the following parameter alignment:

Voltage Rating: Both devices maintain 30V Vdss, ensuring compatibility in circuits designed for this voltage class
Drain Current Capability: The substitute provides 100A (Tc) continuous drain current, which exceeds the IRF6678's 150A (Tc) rating and 30A (Ta) rating, supporting equivalent or higher current applications
On-Resistance: RDS(on) of 2mOhm @ 15A, 10V is comparable to the IRF6678's 2.2mOhm @ 30A, 10V, indicating similar conduction losses
Gate Charge: 64 nC @ 10V is equivalent to the IRF6678's 65 nC @ 4.5V, supporting similar switching characteristics
Gate Threshold Voltage: 2.15V @ 1mA aligns with the IRF6678's 2.25V @ 250µA threshold specification
Maximum Gate Voltage: Both devices support ±20V Vgs(max)
Surface Mount Technology: Both employ surface mount construction, maintaining assembly compatibility
Operating Temperature: The substitute's -55°C to 175°C range encompasses the IRF6678's -40°C to 150°C range

Package Consideration: The IRF6678 uses DIRECTFET™ MX packaging, while the PSMN2R0-30YL,115 uses LFPAK56 (Power-SO8) packaging. These are distinct physical packages requiring PCB layout modification.

Parameter Comparison

Parameter	IRF6678 (Infineon)	PSMN2R0-30YL,115 (Nexperia)	Unit
Drain-to-Source Voltage (Vdss)	30	30	V
Continuous Drain Current (Tc)	150	100	A
Continuous Drain Current (Ta)	30	—	A
RDS(on) Max @ 10V	2.2 @ 30A	2.0 @ 15A	mOhm
Gate Threshold Voltage (Vgs(th))	2.25 @ 250µA	2.15 @ 1mA	V
Gate Charge (Qg)	65 @ 4.5V	64 @ 10V	nC
Input Capacitance (Ciss)	5640 @ 15V	3980 @ 12V	pF
Power Dissipation (Tc)	89	97	W
Operating Temperature Range	-40 to 150	-55 to 175	°C
Mounting Type	Surface Mount	Surface Mount	—
Package Type	DIRECTFET™ MX	LFPAK56 (Power-SO8)	—
RoHS Status	Non-compliant	ROHS3 Compliant	—
MSL Rating	3 (168 Hours)	1 (Unlimited)	—

Engineering Selection Recommendations

Product Status Consideration:

The IRF6678 is classified as obsolete, while the PSMN2R0-30YL,115 is classified as "Not For New Designs." For applications requiring active component support, neither device is recommended for new designs. However, the PSMN2R0-30YL,115 remains available with higher inventory levels (12,400 pcs vs. 3,630 pcs) and offers superior compliance status.

Compliance and Certification:

The IRF6678 is RoHS non-compliant with MSL rating 3 (168-hour moisture sensitivity limit). The PSMN2R0-30YL,115 is ROHS3 compliant with MSL rating 1 (unlimited moisture sensitivity), providing superior environmental and handling compliance for production environments with extended storage or humid conditions.

Electrical Equivalence:

Both devices maintain identical 30V voltage ratings and comparable on-resistance characteristics. The substitute's lower input capacitance (3980 pF vs. 5640 pF) may reduce gate drive requirements. The substitute's higher power dissipation rating (97W vs. 89W at Tc) provides additional thermal margin.

Package Transition:

Substitution requires PCB layout redesign due to package incompatibility. The DIRECTFET™ MX package differs physically from the LFPAK56 (Power-SO8) package. Thermal performance characteristics may differ between packages and require thermal analysis for the specific application.

Frequently Asked Questions (FAQ)

Q: Can the PSMN2R0-30YL,115 directly replace the IRF6678 without PCB modification?

A: No. The IRF6678 uses DIRECTFET™ MX packaging while the PSMN2R0-30YL,115 uses LFPAK56 (Power-SO8) packaging. These packages have different physical dimensions, pin configurations, and thermal characteristics. PCB layout redesign is required.

Q: Are the electrical characteristics sufficiently similar for circuit operation?

A: Yes, within the specified parameters. Both devices maintain 30V Vdss rating, comparable RDS(on) values (2.2 mOhm vs. 2.0 mOhm), and equivalent gate charge characteristics. Gate threshold voltages are within 0.1V of each other. The substitute supports the required drain current range for most applications.

Q: What is the significance of the RoHS compliance difference?

A: The IRF6678 is RoHS non-compliant while the PSMN2R0-30YL,115 is ROHS3 compliant. For applications subject to RoHS regulations or customer requirements, the substitute provides regulatory compliance. For legacy systems without RoHS requirements, this difference is not a technical constraint.

Q: How does the MSL rating difference affect component handling?

A: The IRF6678 has MSL 3 (168-hour limit), requiring reflow within 168 hours of moisture exposure. The PSMN2R0-30YL,115 has MSL 1 (unlimited), allowing indefinite storage without moisture sensitivity concerns. The substitute is more suitable for warehousing and supply chain environments with variable storage conditions.

Q: Does the lower input capacitance of the substitute affect gate drive circuit design?

A: The substitute's lower Ciss (3980 pF vs. 5640 pF) reduces gate charge requirements, potentially allowing use of lower-current gate drivers or reducing switching losses. Existing gate drive circuits designed for the IRF6678 will operate with the substitute, though optimization may be possible.

Q: What thermal considerations apply when substituting these devices?

A: Both devices are rated for 89-97W power dissipation at Tc. Package differences (DIRECTFET™ MX vs. LFPAK56) result in different thermal resistance characteristics. Thermal analysis specific to the application and PCB layout is required to ensure adequate heat dissipation with the substitute package.

Q: Are there other substitute options beyond the PSMN2R0-30YL,115?

A: The PSMN2R0-30YL,115 is the manufacturer-recommended substitute. The Nexperia device documentation references HAT2099H-EL-E and HAT2168H-EL-E as additional alternatives within the TrenchMOS™ series, though these are not explicitly provided in the primary substitution data.

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