IRF6644 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6644 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 10.3A continuous drain current (Ta) and 60A (Tc). The device features a DirectFET™ MN surface mount package and operates across a temperature range of -40°C to 150°C. The IRF6644 is classified as obsolete, making identification of active equivalent parts essential for ongoing design support and procurement continuity. Substitute parts must maintain identical electrical characteristics and package specifications to ensure direct compatibility in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	10.3	A
Continuous Drain Current @ 25°C (Tc)	60	A
On-State Drain Resistance (Rds On Max)	13	mOhm
Gate-Source Threshold Voltage (Vgs(th) Max)	4.8	V
Gate Charge (Qg Max)	47	nC
Input Capacitance (Ciss Max)	2210	pF
Power Dissipation (Ta)	2.8	W
Power Dissipation (Tc)	89	W
Operating Temperature Range	-40 to 150	°C
Mounting Type	Surface Mount	—
Package Type	DirectFET™ Isometric MN	—
FET Technology	MOSFET (Metal Oxide)	—
Channel Type	N-Channel	—

Substitute Part Grouping Explanation

Substitute parts for the IRF6644 are identified based on strict electrical and mechanical parameter matching. The substitution criteria are:

Primary Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V
Continuous Drain Current (Id @ 25°C): 10.3A (Ta) and 60A (Tc)
On-State Drain Resistance (Rds On): 13 mOhm @ 10.3A, 10V
Gate-Source Threshold Voltage (Vgs(th)): 4.8V @ 150µA
Gate Charge (Qg): 47 nC @ 10V
Input Capacitance (Ciss): 2210 pF @ 25V
Operating Temperature Range: -40°C to 150°C
Package Type: DirectFET™ Isometric MN (Surface Mount)
Channel Type: N-Channel
Technology: MOSFET (Metal Oxide)

Parts meeting all these criteria are classified as direct electrical and mechanical equivalents suitable for one-to-one replacement in circuit designs.

Parameter Comparison

Parameter	IRF6644 (Infineon)	IRF6644TRPBF (International Rectifier)	Match Status
Manufacturer	Infineon Technologies	International Rectifier	Different Manufacturer
Product Status	Obsolete	Active	Substitute is Active
FET Type	N-Channel	N-Channel	Identical
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Identical
Drain-to-Source Voltage (Vdss)	100 V	100 V	Identical
Continuous Drain Current (Ta)	10.3 A	10.3 A	Identical
Continuous Drain Current (Tc)	60 A	60 A	Identical
Rds On (Max) @ Id, Vgs	13 mOhm @ 10.3A, 10V	13 mOhm @ 10.3A, 10V	Identical
Vgs(th) (Max) @ Id	4.8 V @ 150µA	4.8 V @ 150µA	Identical
Gate Charge (Qg) (Max)	47 nC @ 10V	47 nC @ 10V	Identical
Input Capacitance (Ciss) (Max)	2210 pF @ 25V	2210 pF @ 25V	Identical
Power Dissipation (Ta)	2.8 W	2.8 W	Identical
Power Dissipation (Tc)	89 W	89 W	Identical
Operating Temperature Range	-40°C to 150°C	-40°C to 150°C	Identical
Mounting Type	Surface Mount	Surface Mount	Identical
Package Type	DirectFET™ Isometric MN	DirectFET™ Isometric MN	Identical
Series	HEXFET®	HEXFET®	Identical
ECCN	EAR99	EAR99	Identical
HTSUS	8541.29.0095	8541.29.0095	Identical

Engineering Selection Recommendations

The IRF6644TRPBF manufactured by International Rectifier is a direct equivalent substitute for the obsolete Infineon IRF6644. All electrical parameters, mechanical specifications, and package configurations are identical. The primary distinction is product status: the IRF6644TRPBF is classified as active, ensuring ongoing availability and manufacturing support.

Selection Basis:

The IRF6644TRPBF meets all substitution criteria through complete parameter alignment across voltage ratings, current specifications, on-state resistance, threshold voltage, gate charge, input capacitance, power dissipation ratings, and operating temperature range. Both devices utilize identical DirectFET™ Isometric MN surface mount packaging and HEXFET® series technology.

The substitute part carries identical export control classifications (ECCN: EAR99) and harmonized tariff codes (HTSUS: 8541.29.0095), maintaining regulatory compliance for procurement and distribution.

For applications requiring the obsolete IRF6644, the IRF6644TRPBF provides direct replacement capability without circuit redesign or performance modification.

Frequently Asked Questions (FAQ)

Q: Can the IRF6644TRPBF be used as a direct replacement for the IRF6644?

A: Yes. The IRF6644TRPBF is a direct electrical and mechanical equivalent. All parameters including voltage rating, current capacity, on-state resistance, gate characteristics, and package type are identical. No circuit modifications are required.

Q: What is the primary reason to substitute the IRF6644?

A: The IRF6644 is classified as obsolete. The IRF6644TRPBF is an active product from International Rectifier, ensuring continued availability, manufacturing support, and supply chain reliability.

Q: Are there any differences in packaging between these parts?

A: No. Both the IRF6644 and IRF6644TRPBF use the DirectFET™ Isometric MN surface mount package. PCB layout and assembly processes remain unchanged.

Q: Do these parts have different thermal characteristics?

A: No. Power dissipation ratings are identical: 2.8W (Ta) and 89W (Tc). Thermal performance in circuit applications will be equivalent.

Q: Are there compliance or certification differences?

A: Both parts carry identical export control classifications (ECCN: EAR99) and harmonized tariff codes (HTSUS: 8541.29.0095). Regulatory compliance status is equivalent.

Q: What is the gate charge specification, and why does it matter?

A: Gate charge (Qg) is 47 nC @ 10V for both parts. This parameter determines gate drive circuit requirements and switching speed. Identical specifications ensure compatible driver performance.

Q: Can these parts be used interchangeably in high-temperature applications?

A: Yes. Both parts operate across -40°C to 150°C. Thermal performance and reliability are equivalent across the full operating temperature range.

Q: What is the on-state resistance, and how does it affect circuit performance?

A: On-state resistance (Rds On) is 13 mOhm @ 10.3A, 10V for both parts. This specification determines conduction losses and heat generation. Identical values ensure equivalent power efficiency.

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