IRF6635TRPBF N-Channel 30V 32A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6635TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, featuring a 30V drain-to-source voltage rating and 32A continuous drain current capability in a DirectFET™ MX surface mount package. This device is classified as obsolete, which necessitates identification of active equivalent alternatives for new designs and production continuity. The part belongs to the HEXFET® series and is suitable for applications requiring efficient switching performance in compact form factors.

Substiute Parts

IRF6635TRPBF

Infineon TechnologiesIn Stock: 85021IRF6635TRPBF Datasheet

Current PartRFQ

IRF6727MTRPBF

Infineon TechnologiesIn Stock: 25499IRF6727MTRPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF6635TRPBF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 30V
• Continuous Drain Current (Id): Must equal or exceed 32A at Ta
• On-State Resistance (Rds On): Must not exceed 1.8mOhm at specified conditions
• Gate Threshold Voltage (Vgs(th)): Must remain within acceptable switching margins
• Gate Charge (Qg): Must be compatible with existing gate drive circuits
• Input Capacitance (Ciss): Must not significantly degrade switching performance

Mechanical Equivalence Criteria:

• Package Type: DirectFET™ Isometric MX (surface mount)
• Mounting Type: Surface mount compatibility
• Moisture Sensitivity Level: MSL 1 or better

Compliance Criteria:

• REACH Status: REACH Unaffected
• ECCN Classification: EAR99
• HTSUS Code: 8541.29.0095

The IRF6727MTRPBF qualifies as a direct substitute based on matching all electrical parameters within acceptable tolerances and identical mechanical packaging specifications.

Parameter Comparison

Engineering Selection Recommendations

The IRF6727MTRPBF is the qualified substitute for the obsolete IRF6635TRPBF based on the following engineering factors:

Product Status Alignment: The IRF6635TRPBF is classified as obsolete, creating supply chain risk for ongoing production and field service applications. The IRF6727MTRPBF maintains active product status with Infineon Technologies, ensuring continued availability and manufacturing support.

Electrical Performance: The substitute part maintains identical voltage and current ratings (30V, 32A continuous drain current). The on-state resistance of the IRF6727MTRPBF (1.7mOhm) is marginally lower than the main part (1.8mOhm), resulting in improved efficiency characteristics. Gate charge and input capacitance show minor increases (71nC to 74nC and 5970pF to 6190pF respectively), which remain within acceptable switching circuit tolerances for standard gate drive implementations.

Mechanical and Thermal Compatibility: Both parts utilize identical DirectFET™ Isometric MX surface mount packaging with matching thermal performance specifications (2.8W at Ta, 89W at Tc). PCB layout and thermal management designs require no modification.

Regulatory and Compliance Status: Both parts maintain identical REACH Unaffected status, EAR99 export classification, and HTSUS commodity codes. The substitute part carries RoHS3 compliance certification, providing additional environmental regulatory alignment for new designs.

Supply Chain Continuity: With 25,425 pieces in current inventory, the IRF6727MTRPBF provides immediate availability for design transitions and production requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRF6727MTRPBF be used as a direct replacement for the IRF6635TRPBF in existing circuit designs?

A: Yes. The IRF6727MTRPBF is electrically and mechanically equivalent to the IRF6635TRPBF. All critical parameters including voltage rating (30V), continuous drain current (32A), on-state resistance (1.7mOhm vs. 1.8mOhm), and package type (DirectFET™ Isometric MX) are compatible. No circuit modifications are required for PCB layout, gate drive circuits, or thermal management designs.

Q: What are the differences in on-state resistance between these parts?

A: The IRF6727MTRPBF exhibits a maximum on-state resistance of 1.7mOhm at 32A and 10V gate-source voltage, compared to 1.8mOhm for the IRF6635TRPBF. This 0.1mOhm reduction represents improved conduction efficiency and lower power dissipation in the substitute part, providing a performance advantage in switching applications.

Q: Are there any differences in gate charge that would affect gate drive circuit design?

A: Gate charge increases from 71nC to 74nC (approximately 4% increase). This minor increase does not require gate drive circuit redesign for standard implementations. Existing gate drive circuits rated for the original part will operate within specification with the substitute part.

Q: How do the input capacitance values compare?

A: Input capacitance increases from 5970pF to 6190pF (approximately 3.7% increase). This minor increase does not significantly impact switching frequency performance or gate drive timing in typical applications. Standard gate drive implementations will accommodate this capacitance variation.

Q: What is the significance of the product status change from Obsolete to Active?

A: The IRF6635TRPBF is classified as obsolete, indicating Infineon Technologies has discontinued active manufacturing and support. The IRF6727MTRPBF maintains active product status, ensuring continued manufacturing, technical support, and long-term supply chain availability. This transition is critical for production continuity and field service applications.

Q: Are the moisture sensitivity levels identical?

A: Yes. Both parts carry MSL 1 (Unlimited) classification, indicating identical moisture sensitivity handling requirements. No changes to storage, handling, or reflow procedures are necessary when transitioning to the substitute part.

Q: Do both parts meet the same regulatory and export requirements?

A: Yes. Both the IRF6635TRPBF and IRF6727MTRPBF maintain identical REACH Unaffected status, EAR99 export classification, and HTSUS code 8541.29.0095. The substitute part additionally carries RoHS3 compliance certification, providing enhanced environmental regulatory alignment.

Q: Is the DirectFET™ Isometric MX package identical between both parts?

A: Yes. Both parts utilize the same DirectFET™ Isometric MX surface mount package with identical mechanical dimensions, pin configuration, and thermal characteristics. PCB footprints, assembly processes, and thermal management designs require no modification.

Q: What is the operating temperature range for both parts?

A: Both parts operate across the identical temperature range of -40°C to 150°C (junction temperature). Thermal design considerations and derating curves remain unchanged when transitioning to the substitute part.