IRF6626 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF6626 is an N-Channel 30V MOSFET manufactured by Infineon Technologies, featuring a DIRECTFET™ ST surface mount package. This device is rated for 16A continuous drain current (Ta) with a maximum Rds(on) of 5.4mOhm at 10V gate-source voltage. The IRF6626 is classified as Obsolete product status, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support.

Substitution is required due to the obsolete status of the IRF6626, which impacts long-term component availability and supply chain continuity. Equivalent parts must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters.

Substiute Parts

IRF6626
Infineon TechnologiesIn Stock: 928IRF6626 Datasheet
IRF6626
Current Part
PSMN5R0-30YL,115
Nexperia USA Inc.In Stock: 25783PSMN5R0-30YL,115 Datasheet
PSMN5R0-30YL,115
MFR Recommended
PSMN6R0-30YL,115
Nexperia USA Inc.In Stock: 4754PSMN6R0-30YL,115 Datasheet
PSMN6R0-30YL,115
MFR Recommended

Key Parameters

Parameter IRF6626 Value Unit Substitution Criticality
Drain to Source Voltage (Vdss) 30 V Critical
Continuous Drain Current @ 25°C (Ta) 16 A Critical
Rds(on) Max @ 16A, 10V 5.4 mOhm Critical
Gate Threshold Voltage Vgs(th) Max @ 250µA 2.35 V Important
Gate Charge (Qg) Max @ 4.5V 29 nC Important
Input Capacitance (Ciss) Max @ 15V 2380 pF Important
Operating Temperature Range -40 to 150 °C (TJ) Important
Package Type DIRECTFET™ ST - Critical
RoHS Status Non-compliant - Important

Substitute Part Grouping Explanation

Substitute parts for the IRF6626 are selected based on strict electrical and mechanical compatibility criteria. The substitution logic is based on the following parameters:

Electrical Compatibility Requirements:

  • Drain-Source Voltage (Vdss): Must equal or exceed 30V
  • Continuous Drain Current: Must meet or exceed 16A at Ta (25°C ambient)
  • On-Resistance (Rds(on)): Must not exceed 5.4mOhm at specified gate-source voltage to maintain thermal and efficiency characteristics
  • Gate-Source Voltage Range: Must accommodate ±20V maximum rating
  • Operating Temperature: Must support -40°C to 150°C minimum range

Mechanical Compatibility Requirements:

  • Surface Mount technology maintained
  • Package footprint compatibility with application PCB layout

The two manufacturer-recommended substitutes (PSMN5R0-30YL,115 and PSMN6R0-30YL,115) from Nexperia USA Inc. satisfy these electrical parameters while offering improved product status and compliance certifications. Both parts maintain 30V Vdss rating and provide superior continuous drain current ratings (91A and 79A respectively at Tc), ensuring thermal margin in applications originally designed for the IRF6626.

Parameter Comparison

Parameter IRF6626 PSMN5R0-30YL,115 PSMN6R0-30YL,115 Unit
Manufacturer Infineon Technologies Nexperia USA Inc. Nexperia USA Inc. -
Drain to Source Voltage (Vdss) 30 30 30 V
Continuous Drain Current (Tc) 72 91 79 A
Rds(on) Max @ 10V 5.4 5.0 6.0 mOhm
Gate Threshold Voltage Max 2.35 2.15 2.15 V
Gate Charge (Qg) Max 29 @ 4.5V 29 @ 10V 24 @ 10V nC
Input Capacitance (Ciss) Max 2380 @ 15V 1760 @ 12V 1425 @ 12V pF
Operating Temperature Range -40 to 150 -55 to 175 -55 to 175 °C (TJ)
Power Dissipation Max (Tc) 42 61 55 W
Package / Case DirectFET™ Isometric ST SC-100, SOT-669 (LFPAK56) SC-100, SOT-669 (LFPAK56) -
Product Status Obsolete Not For New Designs Not For New Designs -
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 3 (168 Hours) 1 (Unlimited) 1 (Unlimited) -

Engineering Selection Recommendations

PSMN5R0-30YL,115 Selection Criteria:

This substitute provides the lowest on-resistance (5.0mOhm @ 10V) among available alternatives, matching the IRF6626 performance envelope. The 91A continuous drain current (Tc) provides maximum thermal margin for applications originally designed for the 16A (Ta) IRF6626. ROHS3 compliance and MSL 1 rating support modern manufacturing and supply chain requirements. Extended operating temperature range (-55°C to 175°C) exceeds IRF6626 specifications.

PSMN6R0-30YL,115 Selection Criteria:

This substitute offers a balanced alternative with 6.0mOhm on-resistance and 79A continuous drain current (Tc). Reduced gate charge (24nC) and input capacitance (1425pF) compared to PSMN5R0-30YL,115 provide lower switching losses in high-frequency applications. ROHS3 compliance and MSL 1 rating match PSMN5R0-30YL,115 environmental certifications.

Product Status Consideration:

Both Nexperia substitutes carry "Not For New Designs" status, indicating mature product lines with stable supply. This status is preferable to the IRF6626 "Obsolete" classification for long-term availability assurance.

Package Transition:

The IRF6626 DIRECTFET™ ST package differs from the LFPAK56 (SC-100, SOT-669) packages of substitute parts. PCB layout modification is required for implementation. Thermal performance improvements in substitute parts (61W and 55W Tc vs. 42W Tc) support direct functional replacement despite package change.

Frequently Asked Questions (FAQ)

Q: Can PSMN5R0-30YL,115 or PSMN6R0-30YL,115 directly replace IRF6626 without circuit modification?

A: Electrical substitution is direct based on Vdss (30V), gate-source voltage range (±20V), and on-resistance specifications. However, package geometry differs (DIRECTFET™ ST vs. LFPAK56), requiring PCB layout redesign. Gate charge and input capacitance differences may require gate driver optimization in high-frequency switching applications.

Q: Which substitute should be selected for thermal-constrained applications?

A: PSMN5R0-30YL,115 provides superior thermal performance with 61W maximum power dissipation (Tc) and lowest on-resistance (5.0mOhm), reducing junction temperature rise in current-limited designs.

Q: Are there package compatibility considerations between the two substitutes?

A: Both PSMN5R0-30YL,115 and PSMN6R0-30YL,115 use identical LFPAK56 (SC-100, SOT-669) packages, enabling single PCB design to accommodate either part number.

Q: How do gate charge differences affect circuit design?

A: PSMN5R0-30YL,115 specifies 29nC gate charge at 10V (matching IRF6626 at 4.5V), while PSMN6R0-30YL,115 specifies 24nC at 10V. Lower gate charge in PSMN6R0-30YL,115 reduces gate driver power dissipation and switching losses in high-frequency applications.

Q: What is the significance of MSL rating differences?

A: IRF6626 MSL 3 (168 hours) requires controlled moisture exposure during storage and handling. Substitute parts with MSL 1 (Unlimited) eliminate moisture sensitivity constraints, reducing manufacturing process complexity and storage requirements.

Q: Do the extended operating temperature ranges of substitutes provide design advantages?

A: Substitute parts support -55°C to 175°C (TJ) versus IRF6626 -40°C to 150°C (TJ), enabling deployment in wider temperature environments without thermal derating.

Q: Is RoHS3 compliance mandatory for substitute selection?

A: RoHS3 compliance of substitute parts aligns with current regulatory requirements and supply chain standards. IRF6626 non-compliance may restrict use in regulated markets and future procurement.

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