IRF6611 Equivalent & Substitute Parts Reference

Part Overview

The IRF6611 is an N-Channel 30V 32A MOSFET manufactured by Infineon Technologies, featuring DIRECTFET™ MX surface mount packaging. This device is classified as Obsolete, indicating it is no longer in active production. The IRF6611 operates within the HEXFET® series and is designed for applications requiring moderate drain current with low on-resistance characteristics.

Due to its obsolete status, identifying functionally equivalent substitute components is essential for design continuity, production support, and long-term supply chain management. Substitute parts must maintain electrical compatibility across critical parameters including drain-source voltage rating, on-resistance characteristics, gate charge, and thermal performance specifications.

Substiute Parts

IRF6611

Infineon TechnologiesIn Stock: 807IRF6611 Datasheet

Current PartRFQ

PSMN2R5-30YL,115

Nexperia USA Inc.In Stock: 120432PSMN2R5-30YL,115 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRF6611 are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following parameters:

Electrical Compatibility Criteria:

• Drain-Source Voltage (Vdss) rating must equal or exceed 30V
• On-resistance (Rds On) characteristics must be comparable to support equivalent current handling
• Gate charge and input capacitance must be within acceptable ranges to maintain circuit performance
• Gate threshold voltage must support standard gate drive voltage levels
• Maximum operating temperature must accommodate the application thermal environment

Mechanical Compatibility Criteria:

• Surface mount technology requirement
• Package footprint and thermal characteristics must be compatible with PCB layout

Compliance Considerations:

• Product status (Obsolete vs. Not For New Designs) affects long-term availability
• RoHS and REACH compliance status for regulatory requirements
• Moisture sensitivity level for storage and handling procedures

The PSMN2R5-30YL,115 meets these substitution criteria through equivalent voltage rating, comparable on-resistance performance, and compatible gate charge specifications, while offering improved thermal performance and enhanced compliance status.

Parameter Comparison

Engineering Selection Recommendations

Electrical Performance: The PSMN2R5-30YL,115 provides equivalent voltage rating (30V Vdss) and comparable on-resistance characteristics (2.4 mOhm vs. 2.6 mOhm), ensuring functional compatibility in existing circuit designs. Gate charge specifications are nearly identical (57 nC vs. 56 nC), supporting equivalent gate drive requirements. The substitute part demonstrates lower input capacitance (3468 pF vs. 4860 pF), which may improve switching performance in certain applications.

Thermal and Reliability: The PSMN2R5-30YL,115 offers extended operating temperature range (-55°C to 175°C vs. -40°C to 150°C), providing broader environmental compatibility. Power dissipation ratings are equivalent at the case temperature level (88W Tc), supporting thermal design equivalence.

Compliance and Supply Chain: The IRF6611 is classified as Obsolete, indicating discontinued production and limited future availability. The PSMN2R5-30YL,115 is classified as Not For New Designs, indicating controlled availability but superior compliance status. The substitute part achieves ROHS3 compliance compared to the non-compliant IRF6611, and features MSL Level 1 (Unlimited) versus MSL Level 3 (168 Hours), reducing moisture-related handling constraints.

Package Considerations: The IRF6611 uses DIRECTFET™ MX packaging, while the PSMN2R5-30YL,115 uses LFPAK56/Power-SO8 packaging. PCB layout modifications are required for substitution. The LFPAK56 package provides established thermal performance characteristics and widespread design tool support.

Frequently Asked Questions (FAQ)

Q: Can the PSMN2R5-30YL,115 directly replace the IRF6611 without circuit modifications?

A: Electrical substitution is feasible based on equivalent voltage rating and comparable on-resistance. However, package geometry differs (DIRECTFET™ MX vs. LFPAK56), requiring PCB layout redesign. Gate drive voltage compatibility is maintained across both devices.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Drain-source voltage rating (Vdss), on-resistance (Rds On), gate charge (Qg), and gate threshold voltage (Vgs(th)) are the primary criteria. The PSMN2R5-30YL,115 maintains compatibility across all these parameters. Input capacitance differences may affect switching speed but do not prevent functional substitution.

Q: How does the package change from DIRECTFET™ MX to LFPAK56 affect thermal performance?

A: Both packages support equivalent power dissipation at the case temperature level (88-89W Tc). The LFPAK56 package is widely documented in thermal analysis tools. Thermal performance depends on PCB copper area, via placement, and thermal management design rather than package type alone.

Q: What compliance advantages does the PSMN2R5-30YL,115 offer?

A: The substitute part achieves ROHS3 compliance versus non-compliance of the IRF6611. Moisture sensitivity is reduced from MSL Level 3 (168 Hours) to MSL Level 1 (Unlimited), simplifying storage and handling procedures. Both parts maintain EAR99 export classification and REACH Unaffected status.

Q: Are there any current rating differences that affect application suitability?

A: The IRF6611 specifies 32A continuous drain current at Ta (ambient) and 150A at Tc (case). The PSMN2R5-30YL,115 specifies 100A at Tc. For applications operating within the 32A ambient temperature rating, both devices are equivalent. Higher current applications benefit from the substitute part's higher Tc rating.

Q: What is the significance of the product status classifications?

A: IRF6611 is Obsolete, indicating production has ended and inventory is depleting. PSMN2R5-30YL,115 is Not For New Designs, indicating controlled production for legacy support. For new designs, alternative parts with Active status should be evaluated. For legacy system support, the substitute part provides extended availability compared to the obsolete IRF6611.

Q: How do gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. Both parts specify comparable gate charge (56 nC vs. 57 nC), ensuring gate driver sizing remains equivalent. Gate drive voltage levels (4.5V and 10V) are identical, supporting direct driver compatibility.