IRF6607 N-Channel MOSFET 30V 27A Equivalent & Substitute Parts

Part Overview

The IRF6607 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 27A continuous drain current (Ta) and 94A (Tc). This device features the DIRECTFET™ MT package and is part of the HEXFET® series. The IRF6607 is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating packaging and compliance differences.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	27	A
Continuous Drain Current (Tc)	94	A
On-State Resistance (Rds On Max) @ 25A, 10V	3.3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 4.5V	75	nC
Maximum Gate Voltage (Vgs)	±12	V
Input Capacitance (Ciss) @ 15V	6930	pF
Power Dissipation (Ta)	3.6	W
Power Dissipation (Tc)	42	W
Operating Temperature Range	-40 to 150	°C
Package Type	DIRECTFET™ MT	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the IRF6607 are selected based on the following electrical and mechanical criteria:

Voltage Rating Compatibility: All substitute parts maintain the 30V Vdss rating, ensuring direct voltage compatibility in circuit applications.

Current Handling: Substitute parts are rated for 100A continuous drain current (Tc), which exceeds the IRF6607's 94A (Tc) rating. This provides improved thermal performance and current margin.

On-State Resistance: Substitute parts feature Rds On values of 3.0 to 3.5 mOhm, comparable to or better than the IRF6607's 3.3 mOhm specification, ensuring equivalent or superior conduction losses.

Gate Charge and Capacitance: Substitute parts exhibit lower gate charge (41–45.8 nC) and input capacitance (2458–2822 pF) compared to the IRF6607 (75 nC, 6930 pF), resulting in faster switching characteristics.

Temperature Range: Substitute parts support -55°C to 175°C operating range, exceeding the IRF6607's -40°C to 150°C range.

Package Transition: Substitute parts use LFPAK56 (Power-SO8) packaging instead of DIRECTFET™ MT, requiring PCB layout modifications but offering improved thermal dissipation and industry-standard footprints.

Compliance Status: Substitute parts are RoHS3 compliant with MSL 1 rating, compared to the IRF6607's RoHS non-compliance and MSL 3 rating.

Parameter Comparison

Parameter	IRF6607	PSMN3R0-30YL,115	PSMN3R5-30YL,115	Unit
Manufacturer	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.	—
Drain-to-Source Voltage (Vdss)	30	30	30	V
Continuous Drain Current (Tc)	94	100	100	A
Rds On (Max) @ 10V	3.3	3.0	3.5	mOhm
Gate Threshold Voltage (Vgs(th))	2.0	2.15	2.15	V
Gate Charge (Qg)	75	45.8	41	nC
Maximum Gate Voltage (Vgs)	±12	±20	±20	V
Input Capacitance (Ciss)	6930	2822	2458	pF
Power Dissipation (Tc)	42	81	74	W
Operating Temperature Range	-40 to 150	-55 to 175	-55 to 175	°C
Package	DIRECTFET™ MT	LFPAK56	LFPAK56	—
Product Status	Obsolete	Not For New Designs	Not For New Designs	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	—
MSL Rating	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

For Compliance-Driven Applications: PSMN3R0-30YL,115 and PSMN3R5-30YL,115 are both RoHS3 compliant with MSL 1 ratings, meeting modern environmental and reliability standards. The IRF6607's RoHS non-compliance and MSL 3 rating make these substitutes necessary for applications requiring regulatory adherence.

For Thermal Performance: Both Nexperia substitutes provide superior power dissipation ratings (81W and 74W at Tc) compared to the IRF6607 (42W at Tc). This enables higher continuous current operation and improved thermal margin in power conversion circuits.

For Switching Speed: PSMN3R5-30YL,115 offers the lowest gate charge (41 nC) and input capacitance (2458 pF), resulting in faster switching transitions and reduced switching losses compared to the IRF6607's 75 nC gate charge and 6930 pF capacitance.

For On-State Performance: PSMN3R0-30YL,115 provides the lowest on-state resistance (3.0 mOhm), minimizing conduction losses. PSMN3R5-30YL,115 offers 3.5 mOhm, still comparable to the IRF6607's 3.3 mOhm specification.

For Extended Temperature Range: Both substitutes support -55°C to 175°C operation, exceeding the IRF6607's -40°C to 150°C range, providing design margin for extreme environment applications.

Package Consideration: Transition from DIRECTFET™ MT to LFPAK56 (Power-SO8) requires PCB layout redesign. LFPAK56 is an industry-standard package with improved thermal performance through enhanced copper area and via structures.

Frequently Asked Questions (FAQ)

Q: Can PSMN3R0-30YL,115 or PSMN3R5-30YL,115 directly replace IRF6607 without circuit modification?

A: Electrical parameters are compatible (30V Vdss, equivalent or superior Rds On, comparable gate threshold). However, package geometry differs (DIRECTFET™ MT vs. LFPAK56), requiring PCB footprint and layout changes. Gate charge and input capacitance differences may require gate drive circuit optimization for optimal switching performance.

Q: What is the primary advantage of PSMN3R5-30YL,115 over PSMN3R0-30YL,115?

A: PSMN3R5-30YL,115 features lower gate charge (41 nC vs. 45.8 nC) and reduced input capacitance (2458 pF vs. 2822 pF), enabling faster switching transitions and lower gate drive power consumption. PSMN3R0-30YL,115 offers superior on-state resistance (3.0 mOhm vs. 3.5 mOhm), reducing conduction losses.

Q: Are the Nexperia substitutes suitable for new design implementations?

A: Both PSMN3R0-30YL,115 and PSMN3R5-30YL,115 carry "Not For New Designs" status. However, they are RoHS3 compliant with unlimited MSL rating and superior thermal performance, making them suitable for production applications requiring compliance and reliability. Consult Nexperia for long-term availability and roadmap planning.

Q: How do gate charge differences affect circuit design?

A: The IRF6607's 75 nC gate charge requires higher gate drive current compared to substitutes (41–45.8 nC). Lower gate charge in substitutes reduces gate driver power dissipation and enables faster switching. Gate drive circuits may require adjustment to optimize switching speed and minimize shoot-through in half-bridge or full-bridge topologies.

Q: What thermal improvements result from using substitute parts?

A: Substitute parts provide 74–81W power dissipation (Tc) versus IRF6607's 42W (Tc), representing 76–93% improvement. This enables higher continuous current operation, reduced heatsink requirements, or improved thermal margin in existing thermal designs.

Q: Are there package-related reliability considerations?

A: LFPAK56 (Power-SO8) offers superior thermal performance through increased copper area and via density compared to DIRECTFET™ MT. MSL 1 rating (unlimited) for substitutes versus MSL 3 (168 hours) for IRF6607 indicates improved moisture resistance and reduced reflow sensitivity.

Q: Can gate voltage ratings affect circuit compatibility?

A: Substitutes support ±20V gate voltage versus IRF6607's ±12V. This provides additional margin for gate drive circuits but does not affect compatibility. Existing ±12V gate drive circuits operate safely with ±20V-rated devices.

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