IRF644NPBF Equivalent & Substitute Parts

Part Overview

The IRF644NPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 250V drain-to-source voltage and 14A continuous drain current in a Through Hole TO-220AB package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the Through Hole TO-220 package family.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	250	V
Continuous Drain Current (Id) @ 25°C	14	A
On-State Resistance (Rds On Max) @ 10V	240	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	54	nC
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IRF644NPBF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 250V to ensure safe operation in the original circuit topology.

Current Capacity: Substitute parts must support a minimum continuous drain current (Id) equal to or exceeding 14A at 25°C to handle the design load without thermal stress.

On-State Resistance (Rds On): The maximum on-state resistance at 10V gate drive must be compatible with the original circuit's power dissipation budget. Lower Rds On values indicate improved efficiency and reduced heat generation.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts with significantly higher gate charge may require driver circuit modifications.

Thermal Performance: Power dissipation capability and operating temperature range must support the application's thermal environment.

Package Compatibility: All substitute parts must use Through Hole TO-220 package variants to ensure mechanical and electrical compatibility with existing PCB layouts.

Parameter Comparison

Parameter	IRF644NPBF (Main)	IRFB4229PBF	STP17NF25	TK13E25D,S1X(S
Manufacturer	Vishay Siliconix	Infineon Technologies	STMicroelectronics	Toshiba Semiconductor
Product Status	Obsolete	Active	Active	Active
Vdss (V)	250	250	250	250
Id @ 25°C (A)	14	46	17	13
Rds On Max @ 10V (mOhm)	240	46	165	250
Vgs(th) @ 250µA (V)	4	5	4	3.5
Qg @ 10V (nC)	54	110	29.5	25
Power Dissipation Max (W)	150	330	90	102
Operating Temperature (°C)	-55 to 175	-40 to 175	-55 to 150	to 150
Package	TO-220AB	TO-220AB	TO-220	TO-220-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFB4229PBF (Infineon Technologies): This part is an active product with superior electrical performance characteristics. It provides 46A continuous drain current, significantly exceeding the 14A requirement of the IRF644NPBF. The on-state resistance of 46 mOhm is substantially lower than the original 240 mOhm, resulting in reduced power dissipation and improved thermal efficiency. Power dissipation capability of 330W provides substantial thermal margin. The device maintains 250V Vdss rating and supports the full operating temperature range of -40°C to 175°C. ROHS3 compliance and active product status ensure long-term availability and supply chain stability.

STP17NF25 (STMicroelectronics): This active product offers current capacity of 17A, closely matching the original 14A specification. On-state resistance of 165 mOhm is lower than the IRF644NPBF, providing improved efficiency. Gate charge of 29.5 nC is significantly lower than the original 54 nC, enabling faster switching characteristics. Power dissipation of 90W is lower than the original 150W, requiring verification of thermal adequacy in high-power applications. Operating temperature range extends to -55°C, matching the original lower temperature limit. ROHS3 compliance and active status support production continuity.

TK13E25D,S1X(S (Toshiba Semiconductor): This active product provides 13A continuous drain current, closely aligned with the original 14A specification. On-state resistance of 250 mOhm matches the original specification. Gate charge of 25 nC is substantially lower than the original 54 nC, enabling improved switching performance. Power dissipation of 102W is lower than the original 150W. Operating temperature range extends to 150°C, providing reduced upper temperature margin compared to the original 175°C. ROHS3 compliance and active product status ensure supply availability.

All three substitute parts maintain the critical 250V Vdss rating and Through Hole TO-220 package compatibility required for direct substitution in the original circuit topology.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4229PBF directly replace the IRF644NPBF in existing designs?

A: Yes. The IRFB4229PBF maintains the 250V Vdss rating and TO-220AB package compatibility. The higher current rating (46A versus 14A) and lower on-state resistance (46 mOhm versus 240 mOhm) provide improved performance margins. Gate charge is higher (110 nC versus 54 nC), which may require verification of gate driver circuit capability but does not prevent substitution.

Q: What is the primary difference between STP17NF25 and the original IRF644NPBF?

A: The STP17NF25 provides comparable current capacity (17A versus 14A) and maintains 250V Vdss rating. The primary difference is lower power dissipation capability (90W versus 150W) and reduced upper operating temperature limit (150°C versus 175°C). Gate charge is significantly lower (29.5 nC versus 54 nC), enabling faster switching. Applications requiring the full 150W thermal budget require thermal analysis.

Q: Is the TK13E25D,S1X(S suitable for high-temperature applications?

A: The TK13E25D,S1X(S supports operation to 150°C, which is 25°C lower than the original IRF644NPBF maximum of 175°C. Applications requiring sustained operation above 150°C require alternative selection or thermal management verification.

Q: Do all substitute parts require gate driver circuit modifications?

A: Gate charge values differ across substitute parts (25 nC to 110 nC versus original 54 nC). The IRFB4229PBF with 110 nC gate charge may require driver circuit verification. The STP17NF25 and TK13E25D,S1X(S with lower gate charge values (29.5 nC and 25 nC respectively) typically require no driver modifications.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 compliant, matching the original IRF644NPBF compliance status.

Q: What is the impact of lower on-state resistance in substitute parts?

A: Lower on-state resistance reduces power dissipation during conduction, improving thermal efficiency and enabling operation at higher current levels or reduced heat sink requirements. The IRFB4229PBF (46 mOhm) provides the most significant improvement over the original 240 mOhm specification.

Q: Can the IRF644NPBF be used in new production designs?

A: No. The IRF644NPBF is classified as obsolete. New designs must select from active substitute parts to ensure long-term supply chain availability and manufacturing support.

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