IRF640STRRPBF N-Channel MOSFET 200V 18A TO-263 Equivalent & Substitute Parts

Part Overview

The IRF640STRRPBF is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as Active product status with ROHS3 compliance. This part is supplied in Tape & Reel (TR) packaging format with 5200 units currently in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative manufacturers offer improved performance characteristics, or when design requirements necessitate enhanced specifications such as higher current ratings, reduced on-resistance, or extended operating temperature ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	18	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	180	mOhm @ 11A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1300	pF @ 25V
Power Dissipation (Max)	3.1 (Ta), 130 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263-3, D2PAK	Surface Mount
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution eligibility for the IRF640STRRPBF is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): Must equal 200V
Package Type: Must be TO-263 (D2PAK) or equivalent Surface Mount configuration
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Surface Mount
RoHS Status: Must be ROHS3 Compliant
Moisture Sensitivity Level: Must be MSL 1 (Unlimited)

Allowable Variation Parameters:

Continuous Drain Current (Id): Equal to or greater than 18A
Rds On (Max): Equal to or less than 180mOhm (lower values indicate improved performance)
Gate Charge (Qg): Equal to or less than 70nC (lower values reduce switching losses)
Operating Temperature Range: Equal to or exceeding -55°C to 150°C
Power Dissipation: Equal to or greater than 130W (Tc)

All substitute parts listed meet or exceed the critical matching parameters and maintain compatibility with the original IRF640STRRPBF application requirements.

Parameter Comparison

Parameter	IRF640STRRPBF (Vishay)	IRF640STRLPBF (Vishay)	FQB19N20TM (onsemi)	IRF640NSTRLPBF (Infineon)	RCJ160N20TL (Rohm)
Manufacturer	Vishay Siliconix	Vishay Siliconix	onsemi	Infineon Technologies	Rohm Semiconductor
Vdss (V)	200	200	200	200	200
Id @ 25°C (A)	18	18	19.4	18	16
Rds On (Max) @ 10V (mOhm)	180 @ 11A	180 @ 11A	150 @ 9.7A	150 @ 11A	180 @ 8A
Vgs(th) (Max) @ 250µA (V)	4	4	5	4	5.25
Gate Charge Qg (Max) @ 10V (nC)	70	70	40	67	26
Vgs (Max) (V)	±20	±20	±30	±20	±30
Ciss (Max) @ 25V (pF)	1300	1300	1600	1160	1370
Power Dissipation (Tc) (W)	130	130	140	150	40
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	LPTS
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active
Current Inventory	5200 Pcs	1396 Pcs	1790 Pcs	25300 Pcs	2100 Pcs

Engineering Selection Recommendations

IRF640STRLPBF (Vishay Siliconix) - Parametric Equivalent

The IRF640STRLPBF is an identical parametric equivalent to the IRF640STRRPBF, differing only in packaging format (Tape & Reel versus alternative reel configuration). Both parts share the same base product number IRF640, electrical specifications, and compliance certifications. This substitute is suitable for direct replacement in all applications where the original part is specified. Product status is Active with ROHS3 compliance and MSL 1 rating.

FQB19N20TM (onsemi) - Enhanced Performance Substitute

The FQB19N20TM offers improved electrical performance with 19.4A continuous drain current (versus 18A), reduced on-resistance of 150mOhm (versus 180mOhm), and lower gate charge of 40nC (versus 70nC). These characteristics result in reduced switching losses and improved thermal efficiency. The part is rated for 140W power dissipation at Tc (versus 130W) and features extended gate voltage rating of ±30V (versus ±20V). Product status is Active with ROHS3 compliance. This substitute is applicable when enhanced current handling or reduced switching losses are beneficial to circuit performance.

IRF640NSTRLPBF (Infineon Technologies) - Extended Temperature Substitute

The IRF640NSTRLPBF maintains the same 18A current rating and 200V voltage rating as the original part while offering reduced on-resistance of 150mOhm (versus 180mOhm) and extended operating temperature range to 175°C (versus 150°C). Power dissipation is rated at 150W (Tc), exceeding the original specification. The HEXFET® series designation indicates Infineon's proprietary technology. Product status is Active with ROHS3 compliance and REACH Unaffected status. This substitute is applicable for applications requiring extended thermal operating range or improved thermal performance.

RCJ160N20TL (Rohm Semiconductor) - Compact Package Substitute

The RCJ160N20TL is rated for 16A continuous drain current (below the 18A specification) and features significantly reduced power dissipation of 40W (Tc) compared to 130W. The part utilizes LPTS package format rather than standard D2PAK. Gate charge is substantially lower at 26nC (versus 70nC), indicating minimal switching losses. This substitute is applicable only in applications where the 16A current rating is sufficient and where reduced power dissipation and compact packaging are design priorities. Product status is Active with ROHS3 compliance and REACH Unaffected status.

Frequently Asked Questions (FAQ)

Q: Can IRF640STRLPBF be used as a direct replacement for IRF640STRRPBF?

A: Yes. The IRF640STRLPBF is a parametric equivalent with identical electrical specifications, voltage rating, current rating, and thermal characteristics. The parts differ only in packaging format designation. Both are manufactured by Vishay Siliconix and carry the same base product number IRF640.

Q: What are the advantages of using FQB19N20TM over the original IRF640STRRPBF?

A: The FQB19N20TM provides three measurable improvements: higher continuous drain current (19.4A versus 18A), lower on-resistance (150mOhm versus 180mOhm), and significantly lower gate charge (40nC versus 70nC). These characteristics reduce conduction losses and switching losses, resulting in improved efficiency and reduced thermal stress in switching applications.

Q: Is the IRF640NSTRLPBF compatible with the original circuit design?

A: Yes. The IRF640NSTRLPBF maintains the same 200V voltage rating, 18A current rating, and TO-263 (D2PAK) package as the original part. The improved on-resistance (150mOhm versus 180mOhm) and extended temperature range (to 175°C) represent enhancements that do not compromise compatibility. Pin configuration and mounting footprint are identical.

Q: Why does RCJ160N20TL have lower power dissipation than other substitutes?

A: The RCJ160N20TL utilizes LPTS package format, which is a compact surface mount package with reduced thermal mass compared to standard D2PAK. The lower power dissipation specification (40W Tc versus 130W Tc) reflects the thermal limitations of the smaller package rather than superior device performance. The 16A current rating is also lower than the original 18A specification.

Q: Can RCJ160N20TL be used in all applications where IRF640STRRPBF is specified?

A: No. The RCJ160N20TL is rated for 16A continuous drain current, which is below the original 18A specification. This substitute is applicable only in applications where the maximum required drain current does not exceed 16A. The reduced power dissipation rating also indicates lower thermal capability.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance certification, matching the original IRF640STRRPBF. All parts also maintain MSL 1 (Unlimited) moisture sensitivity level rating.

Q: What is the difference between TO-263 and D2PAK package designations?

A: TO-263 and D2PAK are equivalent package designations for the same Surface Mount package format. Both refer to a 3-lead configuration with 2 leads plus a thermal tab. The packages are mechanically and electrically identical and share the same mounting footprint.

Q: Which substitute offers the best thermal performance?

A: The IRF640NSTRLPBF offers the highest power dissipation rating at 150W (Tc), followed by FQB19N20TM at 140W (Tc). Both exceed the original IRF640STRRPBF specification of 130W (Tc). The IRF640NSTRLPBF also features extended operating temperature range to 175°C.

Q: Can gate voltage ratings differ between the original part and substitutes?

A: Yes. The original IRF640STRRPBF is rated for ±20V maximum gate voltage. The FQB19N20TM and RCJ160N20TL both support ±30V maximum gate voltage, providing additional design margin. The IRF640NSTRLPBF maintains the ±20V rating. All parts are compatible with standard gate drive circuits designed for ±20V operation.

Q: What inventory considerations should be evaluated?

A: Current inventory levels vary significantly: IRF640NSTRLPBF (Infineon) has the highest availability at 25,300 units, followed by IRF640STRRPBF (Vishay) at 5,200 units, RCJ160N20TL (Rohm) at 2,100 units, and FQB19N20TM (onsemi) at 1,790 units. Inventory levels should be considered for long-term supply chain planning and lead time requirements.

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