IRF640STRR Equivalent & Substitute Parts

Part Overview

The IRF640STRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage and 18A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. The IRF640STRR remains in stock inventory with 2260 units available, but active alternatives with improved specifications and compliance status are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	18	A (Tc)
On-Resistance (Rds On) @ 11A, 10V	180	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	70	nC
Input Capacitance (Ciss) @ 25V	1300	pF
Power Dissipation (Max)	3.1 (Ta), 130 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
Product Status	Obsolete	—
RoHS Compliance	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF640STRR is determined by the following critical parameters: drain-to-source voltage rating (200V), continuous drain current capability (minimum 18A), on-resistance characteristics, gate charge, and surface mount D2PAK package compatibility. All substitute parts must maintain the 200V Vdss rating and support equivalent or superior current handling at the specified gate drive voltage of 10V.

Substitute parts are grouped into two categories:

Parametric Equivalents (Vishay Siliconix IRF640 Series): IRF640STRLPBF and IRF640STRRPBF are direct parametric matches from the same manufacturer and base product family. These parts maintain identical electrical specifications while offering improved product status (Active) and RoHS3 compliance. The primary distinction is packaging format: tape and reel (TR) versus bulk.

Manufacturer-Recommended Alternatives: FQB19N20LTM, FQB19N20TM (onsemi), IRF640NSTRLPBF (Infineon), RCJ160N20TL (Rohm), and STB19NF20 (STMicroelectronics) are active alternatives that meet or exceed the IRF640STRR electrical requirements while offering enhanced specifications, improved compliance status, and superior availability. These parts share the 200V Vdss rating and D2PAK package but vary in continuous current rating, on-resistance, and power dissipation characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Power Diss. Tc (W)	Product Status	RoHS Status
IRF640STRR	Vishay Siliconix	200	18	180	70	1300	130	Obsolete	Non-compliant
IRF640STRLPBF	Vishay Siliconix	200	18	180	70	1300	130	Active	ROHS3 Compliant
IRF640STRRPBF	Vishay Siliconix	200	18	180	70	1300	130	Active	ROHS3 Compliant
FQB19N20LTM	onsemi	200	21	140	35	2200	140	Active	ROHS3 Compliant
FQB19N20TM	onsemi	200	19.4	150	40	1600	140	Active	ROHS3 Compliant
IRF640NSTRLPBF	Infineon Technologies	200	18	150	67	1160	150	Active	ROHS3 Compliant
RCJ160N20TL	Rohm Semiconductor	200	16	180	26	1370	40	Active	ROHS3 Compliant
STB19NF20	STMicroelectronics	200	15	160	24	800	90	Active	ROHS3 Compliant

Engineering Selection Recommendations

Direct Parametric Replacement: IRF640STRLPBF and IRF640STRRPBF are the preferred substitutes for the IRF640STRR. These parts maintain identical electrical specifications and package format while transitioning from obsolete to active product status. Both alternatives are RoHS3 compliant, addressing regulatory requirements. IRF640STRRPBF offers superior inventory availability (5200 units) compared to IRF640STRLPBF (1396 units).

Enhanced Performance Alternatives: IRF640NSTRLPBF (Infineon) provides improved on-resistance (150 mOhm versus 180 mOhm), superior power dissipation capability (150W versus 130W), and extended operating temperature range (-55°C to 175°C). This part is manufactured under the HEXFET® series designation and maintains 18A continuous current rating with active product status and RoHS3 compliance. Inventory availability is substantial at 25,300 units.

Higher Current Capability: FQB19N20LTM (onsemi) delivers 21A continuous drain current with reduced on-resistance (140 mOhm) and improved gate charge characteristics (35 nC). This QFET® series device is suitable for applications requiring enhanced current handling with lower switching losses. Inventory is available at 5,684 units.

Compact Package Alternative: RCJ160N20TL (Rohm) utilizes an LPTS package format while maintaining 200V Vdss rating. This part is suitable for space-constrained applications, though continuous current is reduced to 16A. Gate charge is significantly lower (26 nC), reducing switching losses in high-frequency applications.

Conservative Current Rating: STB19NF20 (STMicroelectronics) provides 15A continuous current with reduced on-resistance (160 mOhm) and minimal input capacitance (800 pF). This MESH OVERLAY™ series device is appropriate for applications where lower current requirements and reduced switching losses are prioritized. Inventory availability is high at 18,400 units.

All recommended substitutes are RoHS3 compliant, REACH unaffected, and classified as active products with established supply chains.

Frequently Asked Questions (FAQ)

Q: Can IRF640STRLPBF and IRF640STRRPBF be used interchangeably with IRF640STRR?

A: Yes. Both parts are parametric equivalents with identical electrical specifications (200V Vdss, 18A Id, 180 mOhm Rds On, 70 nC Qg). The primary differences are product status (Active versus Obsolete) and RoHS compliance (ROHS3 Compliant versus Non-compliant). Packaging format differs between STRLPBF (tape and reel) and STRRPBF (tape and reel), but both use TO-263 (D2PAK) surface mount package.

Q: What is the difference between the onsemi FQB19N20LTM and FQB19N20TM?

A: Both are onsemi QFET® series devices with 200V Vdss rating. FQB19N20LTM provides 21A continuous current with 140 mOhm on-resistance and 35 nC gate charge. FQB19N20TM provides 19.4A continuous current with 150 mOhm on-resistance and 40 nC gate charge. FQB19N20LTM offers superior current handling and lower switching losses, while FQB19N20TM provides a closer match to the original 18A specification.

Q: Is the Infineon IRF640NSTRLPBF a direct replacement?

A: IRF640NSTRLPBF maintains the same 200V Vdss and 18A continuous current rating as the IRF640STRR. However, on-resistance is improved (150 mOhm versus 180 mOhm), power dissipation is enhanced (150W versus 130W), and operating temperature range is extended to 175°C. These improvements make it a superior alternative rather than a direct replacement, with no electrical incompatibilities.

Q: Why does RCJ160N20TL have lower continuous current (16A) than the IRF640STRR (18A)?

A: RCJ160N20TL uses an LPTS package format optimized for compact board layouts, which results in reduced thermal dissipation capability compared to the standard D2PAK package. The 16A rating reflects this package limitation. This part is suitable for applications where current requirements do not exceed 16A and space constraints are critical.

Q: Are all substitute parts RoHS compliant?

A: Yes. All recommended substitute parts are RoHS3 compliant. The original IRF640STRR is RoHS non-compliant, making the transition to compliant alternatives necessary for regulatory adherence in new designs and procurement.

Q: Can STB19NF20 be used in high-current applications?

A: STB19NF20 is rated for 15A continuous current, which is lower than the IRF640STRR (18A). This part is suitable for applications with current requirements up to 15A. For applications requiring the full 18A capability, IRF640STRLPBF, IRF640STRRPBF, IRF640NSTRLPBF, or FQB19N20TM are more appropriate selections.

Q: What is the primary advantage of FQB19N20LTM over the IRF640STRR?

A: FQB19N20LTM provides 21A continuous current (versus 18A), reduced on-resistance (140 mOhm versus 180 mOhm), and significantly lower gate charge (35 nC versus 70 nC). These characteristics result in lower conduction losses and reduced switching losses, making it suitable for high-efficiency power conversion applications. It is also RoHS3 compliant and active product status.

Q: Are all substitute parts available in the same TO-263 (D2PAK) package?

A: All substitute parts except RCJ160N20TL use the TO-263 (D2PAK) package. RCJ160N20TL uses an LPTS package format. For applications requiring standard D2PAK compatibility, all other alternatives are suitable. For space-constrained designs, RCJ160N20TL offers a compact alternative.

Q: What is the gate charge significance when selecting a substitute?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. FQB19N20LTM (35 nC) and STB19NF20 (24 nC) have significantly lower gate charge than IRF640STRR (70 nC), making them suitable for high-frequency switching applications. IRF640NSTRLPBF (67 nC) provides nearly equivalent gate charge characteristics.

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