IRF640STRL Equivalent & Substitute Parts

Part Overview

The IRF640STRL is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 18A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives with comparable or enhanced performance characteristics within the same package family.

Key Parameters

Parameter	Value	Specification
FET Type	N-Channel	MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss)	200 V	Maximum rated voltage
Continuous Drain Current (Id) @ 25°C	18A (Tc)	At case temperature
On-State Resistance (Rds On)	180 mOhm @ 11A, 10V	Maximum at specified conditions
Gate Threshold Voltage (Vgs(th))	4V @ 250µA	Maximum
Gate Charge (Qg)	70 nC @ 10V	Maximum
Input Capacitance (Ciss)	1300 pF @ 25V	Maximum
Power Dissipation	3.1W (Ta), 130W (Tc)	Maximum
Operating Temperature Range	-55°C to 150°C (TJ)	Junction temperature
Mounting Type	Surface Mount	TO-263 (D2PAK)
Package	TO-263-3, D2PAK (2 Leads + Tab)	Supplier device package

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 200V Vdss specification to ensure safe operation in the same circuit topology.

Current Rating: Substitute parts must support a minimum continuous drain current of 18A at 25°C case temperature. Parts with equal or higher current ratings are acceptable.

Package Compatibility: All substitute parts must use the TO-263 (D2PAK) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.

On-State Resistance: Rds On values must not exceed the original specification to maintain circuit performance and thermal characteristics.

Gate Drive Voltage: Substitute parts must operate with standard 10V gate drive voltage to ensure compatibility with existing gate driver circuits.

Operating Temperature: Substitute parts must support the -55°C to 150°C operating range or equivalent.

RoHS Compliance: Active product status with RoHS3 compliance is preferred for long-term availability and regulatory adherence.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Dissipation (W)	Temp Range (°C)	Status	RoHS
IRF640STRL	Vishay Siliconix	200	18	180 @ 11A, 10V	4 @ 250µA	70 @ 10V	1300 @ 25V	3.1 (Ta), 130 (Tc)	-55 to 150	Obsolete	Non-compliant
IRF640STRLPBF	Vishay Siliconix	200	18	180 @ 11A, 10V	4 @ 250µA	70 @ 10V	1300 @ 25V	3.1 (Ta), 130 (Tc)	-55 to 150	Active	ROHS3 Compliant
IRF640STRRPBF	Vishay Siliconix	200	18	180 @ 11A, 10V	4 @ 250µA	70 @ 10V	1300 @ 25V	3.1 (Ta), 130 (Tc)	-55 to 150	Active	ROHS3 Compliant
FQB19N20LTM	onsemi	200	21	140 @ 10.5A, 10V	2 @ 250µA	35 @ 5V	2200 @ 25V	3.13 (Ta), 140 (Tc)	-55 to 150	Active	ROHS3 Compliant
FQB19N20TM	onsemi	200	19.4	150 @ 9.7A, 10V	5 @ 250µA	40 @ 10V	1600 @ 25V	3.13 (Ta), 140 (Tc)	-55 to 150	Active	ROHS3 Compliant
IRF640NSTRLPBF	Infineon Technologies	200	18	150 @ 11A, 10V	4 @ 250µA	67 @ 10V	1160 @ 25V	150 (Tc)	-55 to 175	Active	ROHS3 Compliant
RCJ160N20TL	Rohm Semiconductor	200	16	180 @ 8A, 10V	5.25 @ 1mA	26 @ 10V	1370 @ 25V	1.56 (Ta), 40 (Tc)	-55 to 150	Active	ROHS3 Compliant
STB19NF20	STMicroelectronics	200	15	160 @ 7.5A, 10V	4 @ 250µA	24 @ 10V	800 @ 25V	90 (Tc)	-55 to 150	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalents (Identical Specifications):

IRF640STRLPBF and IRF640STRRPBF are parametric equivalents manufactured by Vishay Siliconix. Both parts maintain identical electrical characteristics to the IRF640STRL with 200V Vdss, 18A continuous drain current, and 180 mOhm on-state resistance. Both are classified as Active products with ROHS3 compliance, providing superior long-term availability and regulatory adherence compared to the obsolete original part. IRF640STRRPBF offers higher inventory availability (5200 units) relative to IRF640STRLPBF (1396 units).

Manufacturer-Recommended Substitutes (Enhanced Performance):

FQB19N20LTM (onsemi) provides improved performance with 21A continuous drain current and reduced on-state resistance of 140 mOhm, delivering lower power dissipation in high-current applications. FQB19N20TM (onsemi) offers 19.4A current rating with 150 mOhm on-state resistance, positioned between the original specification and the higher-performance variant.

IRF640NSTRLPBF (Infineon Technologies) maintains the original 18A current rating with improved on-state resistance of 150 mOhm and extended operating temperature range to 175°C, providing enhanced thermal performance and reliability margin.

Current-Limited Substitutes:

RCJ160N20TL (Rohm Semiconductor) operates at 16A continuous drain current, below the original 18A specification. This part is suitable only for applications where the circuit design accommodates reduced current capacity.

STB19NF20 (STMicroelectronics) operates at 15A continuous drain current, further below the original specification. This part is suitable only for applications with significant current margin in the design.

All substitute parts maintain the 200V voltage rating, TO-263 (D2PAK) package compatibility, and -55°C to 150°C operating temperature range (or extended range for Infineon variant). All substitute parts are Active products with ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can IRF640STRLPBF or IRF640STRRPBF be used as direct replacements for the obsolete IRF640STRL?

A: Yes. Both parts are parametric equivalents with identical electrical specifications (200V, 18A, 180 mOhm Rds On) and the same TO-263 (D2PAK) package. The primary differences are product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. Non-compliant). No circuit modifications are required.

Q: What is the difference between IRF640STRLPBF and IRF640STRRPBF?

A: Both parts are electrically identical. The primary difference is packaging format: IRF640STRLPBF is supplied in Tape & Reel (TR) format with 1396 units in stock, while IRF640STRRPBF is also supplied in Tape & Reel format with significantly higher inventory (5200 units). Selection depends on procurement volume and lead time requirements.

Q: Can FQB19N20LTM be used in place of IRF640STRL?

A: FQB19N20LTM is functionally compatible with enhanced performance characteristics. It maintains the 200V voltage rating and TO-263 (D2PAK) package. The 21A current rating exceeds the original 18A specification, and the 140 mOhm on-state resistance is lower than the original 180 mOhm, resulting in reduced power dissipation. No circuit modifications are required for applications operating within the original 18A current envelope.

Q: Why is RCJ160N20TL listed as a substitute if it only supports 16A instead of 18A?

A: RCJ160N20TL is included as a substitute option for applications where the circuit design includes current margin or where the actual operating current is below 18A. The 200V voltage rating and TO-263 package compatibility are maintained. Circuit analysis is required to confirm adequate current capacity before selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IRF640STRLPBF, IRF640STRRPBF, FQB19N20LTM, FQB19N20TM, IRF640NSTRLPBF, RCJ160N20TL, and STB19NF20) are ROHS3 compliant. The original IRF640STRL is RoHS non-compliant, making the transition to compliant alternatives necessary for regulatory adherence.

Q: What is the significance of the different gate charge (Qg) values among substitute parts?

A: Gate charge affects gate driver circuit design and switching speed. Lower gate charge (FQB19N20LTM at 35 nC, STB19NF20 at 24 nC) enables faster switching transitions and reduces gate driver power consumption. Higher gate charge (IRF640STRL at 70 nC) requires more gate driver current but may provide improved noise immunity. Selection depends on the specific gate driver circuit and switching frequency requirements.

Q: Can IRF640NSTRLPBF (Infineon) be used instead of the Vishay equivalent?

A: Yes. IRF640NSTRLPBF maintains the 200V voltage rating, 18A current rating, and TO-263 package compatibility. It offers improved on-state resistance (150 mOhm vs. 180 mOhm) and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). No circuit modifications are required. Selection depends on supplier preference and availability.

Q: What packaging formats are available for substitute parts?

A: Substitute parts are supplied in Cut Tape (CT) & Digi-Reel® format or Tape & Reel (TR) format. IRF640STRLPBF and IRF640STRRPBF are available in Tape & Reel format. onsemi parts (FQB19N20LTM, FQB19N20TM) are available in Cut Tape & Digi-Reel® format. Infineon (IRF640NSTRLPBF), Rohm (RCJ160N20TL), and STMicroelectronics (STB19NF20) parts are available in Cut Tape & Digi-Reel® format. Packaging selection depends on assembly process requirements and volume.

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