IRF640S N-Channel MOSFET 200V 18A Equivalent & Substitute Parts

Part Overview

The IRF640S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage and 18A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts with active product status is necessary to ensure long-term design continuity, supply chain reliability, and access to current manufacturing processes and compliance certifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Current - Continuous Drain (Id) @ 25°C	18	A (Tc)
Rds On (Max) @ Id, Vgs	180 mOhm @ 11A, 10V	—
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1300	pF @ 25V
Power Dissipation (Max)	3.1W (Ta), 130W (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF640S is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 18A at 25°C
Rds On (Max): Must not exceed 180 mOhm at specified gate voltage
Gate Charge (Qg): Lower values indicate faster switching performance
Vgs (Max): Must accommodate ±20V or greater
Operating Temperature Range: Must support -55°C to 150°C minimum

Physical Compatibility Requirements:

Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), or TO-263AB equivalent

Compliance & Status Requirements:

Product Status: Active status preferred for long-term availability
RoHS Compliance: ROHS3 Compliant preferred for regulatory alignment
Moisture Sensitivity Level (MSL): Level 1 (Unlimited) required

Substitute parts are grouped into two categories: Parametric Equivalents (matching or exceeding all electrical specifications) and Performance Variants (meeting minimum requirements with trade-offs in specific parameters).

Parameter Comparison

Parameter	IRF640S (Main)	IRF640SPBF	FQB19N20TM	FQB19N20LTM	IRF640NSTRLPBF	RCJ160N20TL	STB19NF20
Manufacturer	Vishay Siliconix	Vishay Siliconix	onsemi	onsemi	Infineon Technologies	Rohm Semiconductor	STMicroelectronics
Vdss (V)	200	200	200	200	200	200	200
Id @ 25°C (A)	18	18	19.4	21	18	16	15
Rds On (Max) @ 10V (mOhm)	180 @ 11A	180 @ 11A	150 @ 9.7A	140 @ 10.5A	150 @ 11A	180 @ 8A	160 @ 7.5A
Vgs(th) (Max) @ 250µA (V)	4	4	5	2	4	5.25	4
Gate Charge (Qg) @ 10V (nC)	70	70	40	35	67	26	24
Vgs (Max) (V)	±20	±20	±30	±20	±20	±30	±20
Ciss (Max) @ 25V (pF)	1300	1300	1600	2200	1160	1370	800
Power Dissipation (Tc) (W)	130	130	140	140	150	40	90
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	to 150	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	LPTS	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Equivalent (Recommended for Direct Replacement):

IRF640SPBF (Vishay Siliconix) is the primary equivalent substitute. This part maintains identical electrical specifications to the IRF640S across all critical parameters: 200V Vdss, 18A continuous drain current, 180 mOhm Rds On, and 70 nC gate charge. The IRF640SPBF is classified as Active product status with ROHS3 compliance, ensuring current manufacturing processes and regulatory alignment. Packaging is identical (TO-263 D2PAK). This part is suitable for direct replacement in existing designs without circuit modification.

Secondary Equivalents (Performance-Matched Alternatives):

IRF640NSTRLPBF (Infineon Technologies, HEXFET® series) provides equivalent electrical performance with 18A continuous drain current and 200V Vdss. This part offers extended operating temperature range (-55°C to 175°C) and improved power dissipation (150W Tc). Rds On is 150 mOhm at 11A, 10V, representing a 17% improvement over the main part. Active product status and ROHS3 compliance are confirmed. This part is suitable for applications requiring enhanced thermal performance.

FQB19N20TM (onsemi, QFET® series) provides 19.4A continuous drain current with 200V Vdss, exceeding the 18A requirement. Rds On is 150 mOhm at 9.7A, 10V. Gate charge is reduced to 40 nC, indicating faster switching characteristics. Vgs (Max) extends to ±30V. Active product status and ROHS3 compliance are confirmed. This part is suitable for applications benefiting from improved switching speed and higher current margin.

FQB19N20LTM (onsemi, QFET® series) provides 21A continuous drain current with 200V Vdss. Rds On is 140 mOhm at 10.5A, 10V, representing a 22% improvement. Gate charge is reduced to 35 nC. Power dissipation is 140W (Tc). Active product status and ROHS3 compliance are confirmed. This part is suitable for applications requiring maximum current capacity and lowest on-resistance.

Alternative Substitutes (Performance Trade-offs):

RCJ160N20TL (Rohm Semiconductor) provides 16A continuous drain current, which is 2A below the main part specification. Rds On is 180 mOhm at 8A, 10V, matching the main part. Gate charge is significantly reduced to 26 nC. Power dissipation is limited to 40W (Tc), representing a 69% reduction. This part is suitable only for applications where the 16A current rating is sufficient and thermal dissipation is not critical.

STB19NF20 (STMicroelectronics, MESH OVERLAY™ series) provides 15A continuous drain current, which is 3A below the main part specification. Rds On is 160 mOhm at 7.5A, 10V. Gate charge is reduced to 24 nC. Power dissipation is 90W (Tc). This part is suitable only for applications where the 15A current rating is sufficient.

Compliance & Availability Considerations:

All substitute parts listed are classified as Active product status, ensuring long-term supply chain availability. All substitute parts are ROHS3 compliant, meeting current regulatory requirements. The IRF640SPBF is recommended as the primary choice for direct replacement due to identical specifications and Vishay Siliconix manufacturing continuity. Alternative substitutes from onsemi and Infineon are recommended when enhanced performance characteristics (lower Rds On, reduced gate charge, extended temperature range) align with application requirements.

Frequently Asked Questions (FAQ)

Q: Can IRF640SPBF be used as a direct replacement for IRF640S without circuit modification?

A: Yes. IRF640SPBF is a parametric equivalent with identical electrical specifications: 200V Vdss, 18A continuous drain current, 180 mOhm Rds On, 70 nC gate charge, and ±20V Vgs (Max). Both parts use TO-263 (D2PAK) packaging. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. non-compliant). No circuit modification is required.

Q: What is the difference between the onsemi FQB19N20TM and FQB19N20LTM substitutes?

A: Both parts are onsemi QFET® series MOSFETs with 200V Vdss. FQB19N20TM provides 19.4A continuous drain current with 150 mOhm Rds On and 40 nC gate charge. FQB19N20LTM provides 21A continuous drain current with 140 mOhm Rds On and 35 nC gate charge. FQB19N20LTM offers higher current capacity and lower on-resistance, making it suitable for applications requiring maximum performance. Both parts are packaged in TO-263 (D2PAK).

Q: Why does RCJ160N20TL have lower power dissipation than other substitutes?

A: RCJ160N20TL is packaged in LPTS (a smaller surface mount package) rather than TO-263 (D2PAK). The smaller package has reduced thermal mass and lower power dissipation rating (40W Tc vs. 130W+ for D2PAK variants). Additionally, RCJ160N20TL is rated for 16A continuous drain current, which is 2A lower than the main part. This part is suitable only for applications where the 16A current rating and 40W thermal dissipation are sufficient.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 compliant. The original IRF640S is RoHS non-compliant. If RoHS compliance is a design requirement, any of the listed substitutes are acceptable. IRF640SPBF is recommended as the primary choice for RoHS compliance with identical electrical performance.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values indicate faster switching speed and reduced driver power consumption. FQB19N20LTM has the lowest gate charge (35 nC), followed by FQB19N20TM (40 nC) and RCJ160N20TL (26 nC). The main part and IRF640SPBF both have 70 nC. For applications with high switching frequency or limited gate driver capability, lower gate charge substitutes are beneficial.

Q: Can STB19NF20 be used if the application requires only 15A continuous drain current?

A: Yes, if the application circuit is designed for 15A maximum continuous drain current, STB19NF20 is a suitable substitute. However, this part provides no current margin above the application requirement. STB19NF20 offers reduced gate charge (24 nC) and lower power dissipation (90W Tc), making it suitable for low-power switching applications. For applications requiring the full 18A rating of the main part, STB19NF20 is not recommended.

Q: What is the operating temperature range difference between IRF640NSTRLPBF and other substitutes?

A: IRF640NSTRLPBF (Infineon Technologies) supports -55°C to 175°C operating temperature, which is 25°C higher than the main part and most other substitutes (-55°C to 150°C). This extended upper temperature limit is beneficial for applications operating in high-temperature environments or with limited thermal management. All other substitutes support the standard -55°C to 150°C range.

Q: Are all substitute parts available in the same packaging?

A: Most substitutes use TO-263 (D2PAK) packaging identical to the main part. RCJ160N20TL uses LPTS packaging, which is a different surface mount package. If PCB layout compatibility is critical, verify that the LPTS package footprint matches your design. All other substitutes (IRF640SPBF, FQB19N20TM, FQB19N20LTM, IRF640NSTRLPBF, STB19NF20) use TO-263 (D2PAK) and are footprint-compatible with the main part.

Q: Which substitute offers the best overall performance improvement?

A: FQB19N20LTM offers the most comprehensive performance improvement: 21A continuous drain current (17% higher than main part), 140 mOhm Rds On (22% lower), 35 nC gate charge (50% lower), and 140W power dissipation (8% higher). This part is suitable for applications requiring maximum current capacity, lowest on-resistance, and fastest switching speed. IRF640NSTRLPBF is recommended if extended operating temperature range (-55°C to 175°C) is the primary requirement.

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