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IRF640NSTRRPBF Equivalent & Substitute Parts
Part Overview
The IRF640NSTRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 200V drain-to-source voltage and 18A continuous drain current at 25°C. The device is packaged in D2PAK (TO-263-3) surface mount configuration with a maximum power dissipation of 150W at case temperature. This part is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design requirements and production continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 200 | V |
| Continuous Drain Current (Id) @ 25°C | 18 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V | — |
| Gate Charge (Qg) @ Vgs | 67 nC @ 10V | — |
| Power Dissipation (Max) | 150 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the IRF640NSTRRPBF is determined by the following critical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): 200V minimum
- Continuous Drain Current (Id): 18A or greater at 25°C
- Package Type: D2PAK (TO-263-3) surface mount
- Mounting Type: Surface mount compatible
- RoHS Compliance: ROHS3 Compliant
Secondary Compatibility Factors:
- Gate Charge (Qg): Lower values indicate faster switching
- On-State Resistance (Rds On): Lower values reduce conduction losses
- Operating Temperature Range: Must support -55°C to 175°C minimum
- Power Dissipation: 130W or greater at case temperature
Substitutes are grouped into two categories: Parametric Equivalents (identical electrical specifications and packaging) and Functional Alternatives (meet or exceed primary criteria with acceptable performance trade-offs).
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Pd Max (W) | Temp Range (°C) | Status | Packaging |
|---|---|---|---|---|---|---|---|---|---|
| IRF640NSTRRPBF | Infineon | 200 | 18 | 150 @ 11A, 10V | 67 @ 10V | 150 | -55 to 175 | Obsolete | CT & Digi-Reel® |
| IRF640NSTRLPBF | Infineon | 200 | 18 | 150 @ 11A, 10V | 67 @ 10V | 150 | -55 to 175 | Active | CT & Digi-Reel® |
| FQB19N20TM | onsemi | 200 | 19.4 | 150 @ 9.7A, 10V | 40 @ 10V | 140 | -55 to 150 | Active | CT & Digi-Reel® |
| FQB19N20LTM | onsemi | 200 | 21 | 140 @ 10.5A, 10V | 35 @ 5V | 140 | -55 to 150 | Active | CT & Digi-Reel® |
| IRF640SPBF | Vishay Siliconix | 200 | 18 | 180 @ 11A, 10V | 70 @ 10V | 130 | -55 to 150 | Active | Tube |
| IRF640STRLPBF | Vishay Siliconix | 200 | 18 | 180 @ 11A, 10V | 70 @ 10V | 130 | -55 to 150 | Active | TR |
| IRF640STRRPBF | Vishay Siliconix | 200 | 18 | 180 @ 11A, 10V | 70 @ 10V | 130 | -55 to 150 | Active | TR |
| IRL640SPBF | Vishay Siliconix | 200 | 17 | 180 @ 10A, 5V | 66 @ 5V | 125 | -55 to 150 | Active | Tube |
| IRL640STRLPBF | Vishay Siliconix | 200 | 17 | 180 @ 10A, 5V | 66 @ 5V | 125 | -55 to 150 | Active | TR |
| IRL640STRRPBF | Vishay Siliconix | 200 | 17 | 180 @ 10A, 5V | 66 @ 5V | 125 | -55 to 150 | Active | TR |
| PHB33NQ20T,118 | Nexperia USA Inc. | 200 | 32.7 | 77 @ 15A, 10V | 32.2 @ 10V | 230 | -55 to 175 | Active | TR |
Engineering Selection Recommendations
Parametric Equivalent (Direct Replacement):
IRF640NSTRLPBF is the direct parametric equivalent to IRF640NSTRRPBF. Both parts are manufactured by Infineon Technologies with identical electrical specifications, operating temperature range (-55°C to 175°C), and ROHS3 compliance. The primary difference is packaging format: IRF640NSTRLPBF is available in Cut Tape (CT) & Digi-Reel® format with 25,300 units in stock, compared to the obsolete IRF640NSTRRPBF. This part is recommended for direct substitution in all applications.
Functional Alternatives (Performance-Equivalent Substitutes):
FQB19N20TM (onsemi) meets the 200V/18A+ specification with improved gate charge characteristics (40 nC vs. 67 nC) and lower on-state resistance (150 mOhm). Operating temperature range is -55°C to 150°C, which is acceptable for most applications. This part is active with 1,790 units in stock.
FQB19N20LTM (onsemi) provides enhanced performance with 21A continuous drain current, lower on-state resistance (140 mOhm), and reduced gate charge (35 nC). Operating temperature maximum is 150°C. This part is active with 5,684 units in stock.
IRF640SPBF, IRF640STRLPBF, and IRF640STRRPBF (Vishay Siliconix) maintain 200V/18A ratings with slightly higher on-state resistance (180 mOhm) and reduced maximum power dissipation (130W vs. 150W). Operating temperature range is -55°C to 150°C. These parts are active with inventory ranging from 1,396 to 5,200 units.
Limited Current Applications:
IRL640SPBF, IRL640STRLPBF, and IRL640STRRPBF (Vishay Siliconix) are suitable only for applications requiring 17A or less continuous drain current. These parts feature lower gate charge (66 nC) and reduced power dissipation (125W). Operating temperature range is -55°C to 150°C.
High-Performance Alternative:
PHB33NQ20T,118 (Nexperia USA Inc.) is a TrenchMOS™ technology device rated for 32.7A continuous drain current with significantly lower on-state resistance (77 mOhm) and reduced gate charge (32.2 nC). Maximum power dissipation is 230W. Operating temperature range is -55°C to 175°C, matching the original part. This device is suitable for applications requiring enhanced current handling and reduced thermal dissipation.
Frequently Asked Questions (FAQ)
Q: Can IRF640NSTRLPBF be used as a direct replacement for IRF640NSTRRPBF?
A: Yes. IRF640NSTRLPBF is a parametric equivalent with identical electrical specifications, voltage rating (200V), current rating (18A), on-state resistance (150 mOhm), gate charge (67 nC), and operating temperature range (-55°C to 175°C). The only difference is packaging format. Both are ROHS3 compliant and manufactured by Infineon Technologies.
Q: What is the difference between the onsemi FQB19N20TM and FQB19N20LTM?
A: FQB19N20LTM provides higher continuous drain current (21A vs. 19.4A), lower on-state resistance (140 mOhm vs. 150 mOhm), and reduced gate charge (35 nC vs. 40 nC). Both maintain 200V voltage rating and are ROHS3 compliant. FQB19N20LTM is preferred for applications requiring maximum current capacity and reduced switching losses.
Q: Are Vishay Siliconix IRF640 variants compatible with the Infineon IRF640NSTRRPBF?
A: Vishay Siliconix IRF640SPBF, IRF640STRLPBF, and IRF640STRRPBF are functionally compatible with identical 200V/18A ratings and D2PAK packaging. However, they exhibit higher on-state resistance (180 mOhm vs. 150 mOhm), higher gate charge (70 nC vs. 67 nC), and reduced maximum power dissipation (130W vs. 150W). Operating temperature maximum is 150°C instead of 175°C. These parts are suitable for most applications but may require thermal analysis in high-dissipation designs.
Q: Why would I select PHB33NQ20T,118 over other substitutes?
A: PHB33NQ20T,118 is selected for applications requiring higher current capacity (32.7A), lower on-state resistance (77 mOhm), reduced gate charge (32.2 nC), and higher power dissipation capability (230W). The operating temperature range (-55°C to 175°C) matches the original part. This device is suitable for high-efficiency switching applications where thermal performance and current handling are critical.
Q: What packaging formats are available for these substitutes?
A: Infineon IRF640NSTRLPBF is available in Cut Tape (CT) & Digi-Reel® format. onsemi FQB19N20TM and FQB19N20LTM are available in Cut Tape (CT) & Digi-Reel® format. Vishay Siliconix IRF640SPBF is available in Tube packaging, while IRF640STRLPBF, IRF640STRRPBF, IRL640SPBF, IRL640STRLPBF, and IRL640STRRPBF are available in Tape & Reel (TR) format. PHB33NQ20T,118 is available in Tape & Reel (TR) format. All parts use D2PAK (TO-263-3) surface mount package.
Q: Are all substitutes ROHS3 compliant?
A: Yes. All listed substitute parts are ROHS3 compliant. The original IRF640NSTRRPBF is also ROHS3 compliant. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no moisture sensitivity restrictions.
Q: What is the minimum operating temperature for these parts?
A: All substitute parts maintain the -55°C minimum operating temperature of the original IRF640NSTRRPBF. Maximum operating temperature varies: Infineon parts support 175°C, while most Vishay Siliconix and onsemi parts support 150°C maximum. PHB33NQ20T,118 supports 175°C maximum, matching the original specification.
Q: Can IRL640 variants replace IRF640 variants?
A: IRL640 variants (IRL640SPBF, IRL640STRLPBF, IRL640STRRPBF) are suitable only for applications requiring 17A or less continuous drain current. The original IRF640NSTRRPBF is rated for 18A, so IRL640 variants represent a current derating. These parts feature identical 200V voltage rating, D2PAK packaging, and similar gate charge characteristics but reduced power dissipation (125W vs. 150W).
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