IRF640NSPBF Equivalent & Substitute Parts

Part Overview

The IRF640NSPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for applications requiring moderate power dissipation up to 150W at the case temperature. The IRF640NSPBF is currently discontinued at DiGi Electronics, necessitating identification of equivalent and substitute components that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	18	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	150	mOhm @ 11A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	67	nC @ 10V
Maximum Gate Voltage Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1160	pF @ 25V
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2PAK
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRF640NSPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 200V minimum
Package / Case: TO-263-3, D2PAK (2 Leads + Tab)
Mounting Type: Surface Mount
Gate Threshold Voltage Vgs(th): 4V @ 250µA
Maximum Gate Voltage Vgs: ±20V
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Secondary Electrical Parameters (Allowable Variation):

Continuous Drain Current (Id): 18A or greater
Rds On (Max) @ 10V: 180mOhm or lower (lower resistance is acceptable)
Gate Charge (Qg): 70nC or lower (lower charge is acceptable)
Power Dissipation: 130W or greater (higher dissipation is acceptable)
Operating Temperature: -55°C to 150°C minimum (extended range acceptable)

Substitute parts are grouped into two categories: direct equivalents (same drain current rating) and higher-performance alternatives (increased current or reduced on-resistance).

Parameter Comparison

Parameter	IRF640NSPBF	IRF640SPBF	IRF640STRLPBF	IRF640STRRPBF	PHB33NQ20T,118	PSMN057-200B,118	STB19NF20
Manufacturer	Infineon	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Nexperia USA Inc.	Nexperia USA Inc.	STMicroelectronics
Vdss (V)	200	200	200	200	200	200	200
Id @ 25°C (A)	18	18	18	18	32.7	39	15
Rds On (Max) @ 10V (mOhm)	150 @ 11A	180 @ 11A	180 @ 11A	180 @ 11A	77 @ 15A	57 @ 17A	160 @ 7.5A
Vgs(th) (V) @ Id	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 1mA	4 @ 1mA	4 @ 250µA
Qg (Max) @ 10V (nC)	67	70	70	70	32.2	96	24
Vgs (Max) (V)	±20	±20	±20	±20	±20	±20	±20
Ciss (Max) @ 25V (pF)	1160	1300	1300	1300	1870	3750	800
Power Dissipation (Max) (W)	150 (Tc)	130 (Tc)	130 (Tc)	130 (Tc)	230 (Tc)	250 (Tc)	90 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 175	-55 to 150
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Discontinued	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL	1	1	1	1	1	1	1

Engineering Selection Recommendations

Direct Equivalents (18A Rating):

The IRF640SPBF, IRF640STRLPBF, and IRF640STRRPBF from Vishay Siliconix are direct electrical equivalents to the IRF640NSPBF. All three parts maintain the 200V Vdss, 18A continuous drain current, and D2PAK package. These parts are currently in active production status. The IRF640STRRPBF offers the highest inventory availability (5200 pcs) and is supplied in Tape & Reel packaging. The IRF640SPBF is supplied in Tube packaging with 1584 pcs available. The IRF640STRLPBF is supplied in Tape & Reel with 1396 pcs available. All three are ROHS3 compliant with MSL 1 rating.

The primary difference between these equivalents is on-resistance specification: the Vishay parts specify 180mOhm maximum at 11A and 10V, compared to the Infineon part's 150mOhm specification. This 30mOhm increase represents a 20% degradation in on-resistance performance. Operating temperature range is reduced to -55°C to 150°C (versus -55°C to 175°C for the original part). Power dissipation is specified at 130W (Tc) versus 150W (Tc) for the original.

Higher Current Alternatives:

The PHB33NQ20T,118 from Nexperia USA Inc. provides 32.7A continuous drain current with superior on-resistance of 77mOhm at 15A and 10V. This part maintains 200V Vdss, D2PAK package, and extends operating temperature to -55°C to 175°C. Power dissipation is rated at 230W (Tc). Gate charge is significantly lower at 32.2nC. This part is suitable for applications requiring higher current capacity or lower on-resistance losses. Inventory: 3804 pcs.

The PSMN057-200B,118 from Nexperia USA Inc. provides the highest current rating at 39A continuous drain current with the lowest on-resistance at 57mOhm at 17A and 10V. This part maintains 200V Vdss, D2PAK package, and -55°C to 175°C operating temperature. Power dissipation is rated at 250W (Tc). Gate charge is 96nC. This part is suitable for high-current applications where on-resistance minimization is critical. Inventory: 11197 pcs (highest availability).

Lower Current Alternative:

The STB19NF20 from STMicroelectronics provides 15A continuous drain current, which is below the original 18A specification. This part maintains 200V Vdss and D2PAK package but is not recommended as a direct substitute due to reduced current rating. Operating temperature range is -55°C to 150°C. Power dissipation is 90W (Tc). This part is suitable only for applications with reduced current requirements. Inventory: 18400 pcs.

Compliance and Certification:

All substitute parts are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original part's compliance profile. All parts are rated for EAR99 export classification and HTSUS 8541.29.0095 tariff code.

Frequently Asked Questions (FAQ)

Q: Can IRF640SPBF directly replace IRF640NSPBF in existing designs?

A: IRF640SPBF is electrically compatible with IRF640NSPBF for applications operating within the specified parameter ranges. Both parts share identical Vdss (200V), Id (18A), Vgs(th) (4V @ 250µA), and D2PAK package. The primary difference is on-resistance specification: IRF640SPBF specifies 180mOhm maximum versus 150mOhm for IRF640NSPBF. Applications sensitive to on-resistance losses or operating at the upper temperature limit (175°C) should account for the reduced operating temperature range of IRF640SPBF (-55°C to 150°C).

Q: What is the difference between IRF640STRLPBF and IRF640STRRPBF?

A: Both parts are electrically identical Vishay Siliconix N-Channel MOSFETs with 200V Vdss and 18A continuous drain current. The difference is in packaging format: IRF640STRLPBF is supplied in Tape & Reel (TR) with 1396 pcs inventory, while IRF640STRRPBF is also supplied in Tape & Reel with significantly higher inventory of 5200 pcs. Both maintain identical electrical specifications and D2PAK package configuration.

Q: Why would I select PHB33NQ20T,118 or PSMN057-200B,118 over direct equivalents?

A: These higher-current alternatives are selected when applications require reduced on-resistance losses or higher current capacity. PHB33NQ20T,118 provides 32.7A rating with 77mOhm on-resistance, reducing power dissipation in high-current switching applications. PSMN057-200B,118 provides 39A rating with 57mOhm on-resistance, offering the lowest losses. Both parts maintain 200V Vdss and D2PAK package compatibility. Selection depends on thermal budget and current requirements of the specific application.

Q: Is STB19NF20 a suitable substitute for IRF640NSPBF?

A: STB19NF20 is not recommended as a direct substitute due to reduced continuous drain current rating of 15A versus the original 18A specification. This part is suitable only for applications with current requirements below 15A. The part maintains 200V Vdss and D2PAK package but operates at reduced power dissipation (90W Tc) and narrower temperature range (-55°C to 150°C).

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts are supplied in D2PAK (TO-263-3) surface mount package, maintaining mechanical compatibility with IRF640NSPBF. Packaging format (Tube, Tape & Reel, or Cut Tape) varies by manufacturer and part number. IRF640SPBF is supplied in Tube; IRF640STRLPBF and IRF640STRRPBF are supplied in Tape & Reel; PHB33NQ20T,118 and PSMN057-200B,118 are supplied in Tape & Reel; STB19NF20 is supplied in Cut Tape & Digi-Reel.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts listed are ROHS3 compliant and carry Moisture Sensitivity Level 1 (Unlimited), matching the original IRF640NSPBF compliance profile. All parts are classified as EAR99 for export purposes and carry HTSUS tariff code 8541.29.0095. REACH status varies by manufacturer: Vishay parts are REACH Affected or Vendor Undefined; Nexperia and STMicroelectronics parts are REACH Unaffected.

Q: Can I use higher-current parts in applications designed for 18A?

A: Yes. Higher-current parts such as PHB33NQ20T,118 (32.7A) and PSMN057-200B,118 (39A) are forward-compatible with applications designed for 18A operation. These parts maintain identical Vdss (200V), Vgs(th) (4V), and D2PAK package. The higher current rating and lower on-resistance provide improved thermal performance and reduced power dissipation. No circuit modifications are required for substitution.

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